Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.512 |
|
MOSFET (Metal Oxide) | 55V | 50A (Tc) | 10V | 4V @ 80µA | 52nC @ 10V | 1485pF @ 25V | ±20V | - | 136W (Tc) | 14.4 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 200V 18LCC
|
pacote: 18-BQFN Exposed Pad |
Estoque7.456 |
|
MOSFET (Metal Oxide) | 200V | 2.25A (Tc) | 10V | 4V @ 250µA | 8.6nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 1.5 Ohm @ 1.5A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Renesas Electronics America |
MOSFET N-CH 900V 5A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque7.120 |
|
MOSFET (Metal Oxide) | 900V | 5A (Ta) | 10V | - | - | 740pF @ 10V | ±30V | - | 100W (Tc) | 4 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8
|
pacote: PowerPAK? 1212-8 |
Estoque1.207.008 |
|
MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 4.5V | 1V @ 300µA | 41nC @ 4.5V | - | ±8V | - | 1.5W (Ta) | 19 mOhm @ 11.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Infineon Technologies |
MOSFET N-CH 30V 8TDSON
|
pacote: 8-PowerTDFN |
Estoque7.184 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 2V @ 250µA | 15nC @ 10V | 950pF @ 15V | ±20V | - | 2.1W (Ta) | 4.4 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 20V 2.7A SC-70-6
|
pacote: 6-TSSOP, SC-88, SOT-363 |
Estoque396.012 |
|
MOSFET (Metal Oxide) | 20V | 2.7A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 8.5nC @ 4.5V | 470pF @ 10V | ±12V | - | 1.5W (Ta), 2.78W (Tc) | 80 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
STMicroelectronics |
MOSFET N CH 950V 9A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque6.080 |
|
MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 450pF @ 100V | ±30V | - | 90W (Tc) | 1.25 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 50A 5X6 PQFN
|
pacote: 8-PowerTDFN |
Estoque520.944 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 2.35V @ 50µA | 41nC @ 10V | 3180pF @ 10V | ±20V | - | 3.6W (Ta), 59W (Tc) | 3.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque17.160 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 42 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 7.5A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque20.196 |
|
MOSFET (Metal Oxide) | 150V | 7.5A (Ta) | 6V, 10V | 4V @ 250µA | 40nC @ 10V | 2570pF @ 75V | ±20V | - | 2.5W (Ta), 5W (Tc) | 19.8 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 60V 22A WDSON-2
|
pacote: 3-WDSON |
Estoque141.282 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta), 90A (Tc) | 10V | 4V @ 102µA | 143nC @ 10V | 12000pF @ 30V | ±20V | - | 2.2W (Ta), 78W (Tc) | 2.8 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Vishay Siliconix |
MOSFET N-CH 20V 12A SC70-6
|
pacote: PowerPAK? SC-70-6 |
Estoque633.732 |
|
MOSFET (Metal Oxide) | 20V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 18nC @ 10V | 800pF @ 10V | ±20V | - | 3.5W (Ta), 19.2W (Tc) | 13.5 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Texas Instruments |
MOSFET N-CH 25V 3.3X3.3 8-SON
|
pacote: 8-PowerTDFN |
Estoque479.532 |
|
MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 3V, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | 1300pF @ 12.5V | +10V, -8V | - | 3W (Ta) | 4.5 mOhm @ 24A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
|
pacote: - |
Estoque1.053 |
|
SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 18V | 5.7V @ 11mA | 62 nC @ 18 V | 2131 pF @ 400 V | +23V, -5V | - | 189W (Tc) | 34mOhm @ 38.3A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 17A TO247-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 17A (Tc) | - | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 145mOhm @ 8.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Transphorm |
GANFET N-CH 650V 6.5A QFN8X8
|
pacote: - |
Estoque8.982 |
|
GaNFET (Gallium Nitride) | 650 V | 6.5A (Tc) | 6V | 2.8V @ 500µA | 8.8 nC @ 10 V | 730 pF @ 400 V | ±12V | - | 21W (Tc) | 312mOhm @ 6.5A, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (8x8) | 8-VDFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CH 60V 50A D2PAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 4V @ 34µA | 36 nC @ 10 V | 2900 pF @ 30 V | ±20V | - | 71W (Tc) | 9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Harris Corporation |
MOSFET N-CH 1000V 4.3A TO263AB
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 4.3A (Tc) | - | 4V @ 250µA | - | - | ±20V | - | 150W (Tc) | 3.5Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 4.1A SOT23-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 4.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 18 nC @ 10 V | 840 pF @ 15 V | ±20V | - | 1.4W (Ta) | 52mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 7A (Tc) | 10V | 4.1V @ 250µA | 11.5 nC @ 10 V | 675 pF @ 100 V | ±20V | - | 89W (Tc) | 780mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Micro Commercial Co |
MCAC10H04Y-TP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 86 nC @ 10 V | 5059 pF @ 20 V | ±20V | - | 80W (Tc) | 1.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 80V 24A/160A 5DFN
|
pacote: - |
Estoque8.730 |
|
MOSFET (Metal Oxide) | 80 V | 24A (Ta), 160A (Tc) | 4.5V, 10V | 2V @ 250µA | 90 nC @ 10 V | 5126 pF @ 40 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 2.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Renesas Electronics Corporation |
MOSFET N-CH 60V 30A TO220
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 30A (Ta) | - | - | 29.8 nC @ 10 V | 1380 pF @ 10 V | - | - | 2W (Ta), 20W (Tc) | 36mOhm @ 15A, 4.5V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Isolated Tab |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 11A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 25 nC @ 10 V | 900 pF @ 30 V | ±20V | - | 3.1W (Ta) | 13.5mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
PCH 2.5V DRIVE SERIES
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IceMOS Technology |
Superjunction MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 3.9V @ 250µA | 59 nC @ 10 V | 2064 pF @ 25 V | ±20V | - | 236W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
STMicroelectronics |
SICFET N-CH 1200V 40A HIP247
|
pacote: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 3.5V @ 1mA | 105 nC @ 20 V | 1700 pF @ 400 V | +25V, -10V | - | 270W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 100V 13A/50A PWRDI
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 41 nC @ 10 V | 2361 pF @ 50 V | ±20V | - | 2W (Ta), 30W (Tc) | 8.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |