Página 1136 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.136/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6691TRPBF
Infineon Technologies

MOSFET N-CH 20V 32A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 15A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MT
  • Package / Case: DirectFET? Isometric MT
pacote: DirectFET? Isometric MT
Estoque2.560
MOSFET (Metal Oxide)
20V
32A (Ta), 180A (Tc)
4.5V, 10V
2.5V @ 250µA
71nC @ 4.5V
6580pF @ 10V
±12V
-
2.8W (Ta), 89W (Tc)
1.8 mOhm @ 15A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MT
DirectFET? Isometric MT
hot IRLU3714Z
Infineon Technologies

MOSFET N-CH 20V 37A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque13.380
MOSFET (Metal Oxide)
20V
37A (Tc)
4.5V, 10V
2.55V @ 250µA
7.1nC @ 4.5V
560pF @ 10V
±20V
-
35W (Tc)
15 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTDV3055L104-1G
ON Semiconductor

MOSFET N-CH 60V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque5.664
MOSFET (Metal Oxide)
60V
12A (Ta)
5V
2V @ 250µA
20nC @ 5V
440pF @ 25V
±15V
-
1.5W (Ta), 48W (Tj)
104 mOhm @ 6A, 5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTGS3441PT1G
ON Semiconductor

MOSFET P-CH 20V 1.8A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
pacote: SOT-23-6
Estoque1.640.388
MOSFET (Metal Oxide)
20V
1.8A (Ta)
2.5V, 4.5V
1.6V @ 250µA
6nC @ 4.5V
345pF @ 15V
±12V
-
510mW (Ta)
110 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
ZVNL120C
Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 5V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque7.440
MOSFET (Metal Oxide)
200V
180mA (Ta)
3V, 5V
1.5V @ 1mA
-
85pF @ 25V
±20V
-
700mW (Ta)
10 Ohm @ 250mA, 5V
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot IRFZ30
Vishay Siliconix

MOSFET N-CH 50V 30A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque90.240
MOSFET (Metal Oxide)
50V
30A (Tc)
10V
4V @ 250µA
30nC @ 10V
1600pF @ 25V
±20V
-
74W (Tc)
50 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AUIRFP1405
Infineon Technologies

MOSFET N-CH 55V 95A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.256
MOSFET (Metal Oxide)
55V
95A (Tc)
10V
4V @ 250µA
180nC @ 10V
5600pF @ 25V
±20V
-
310W (Tc)
5.3 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IXFB52N90P
IXYS

MOSFET N-CH TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
pacote: TO-264-3, TO-264AA
Estoque4.304
MOSFET (Metal Oxide)
900V
52A (Tc)
10V
6.5V @ 1mA
308nC @ 10V
19000pF @ 25V
±30V
-
1250W (Tc)
160 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264?
TO-264-3, TO-264AA
IXTH60N30T
IXYS

MOSFET N-CH 300V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque4.384
MOSFET (Metal Oxide)
300V
60A (Tc)
-
-
-
-
-
-
-
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
hot SIR403EDP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 40A PPAK 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacote: PowerPAK? SO-8
Estoque38.748
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.8V @ 250µA
153nC @ 10V
4620pF @ 15V
±25V
-
5W (Ta), 56.8W (Tc)
6.5 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
APT53F80J
Microsemi Corporation

MOSFET N-CH 800V 57A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 57A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
pacote: SOT-227-4, miniBLOC
Estoque5.376
MOSFET (Metal Oxide)
800V
57A
10V
5V @ 5mA
570nC @ 10V
17550pF @ 25V
±30V
-
960W (Tc)
110 mOhm @ 43A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
hot SUM110P04-05-E3
Vishay Siliconix

MOSFET P-CH 40V 110A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque15.768
MOSFET (Metal Oxide)
40V
110A (Tc)
10V
4V @ 250µA
280nC @ 10V
11300pF @ 25V
±20V
-
15W (Ta), 375W (Tc)
5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD9409_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.512
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
46nC @ 10V
3130pF @ 25V
±20V
-
150W (Tc)
3.2 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024PBF
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque21.114
MOSFET (Metal Oxide)
60V
8.8A (Tc)
10V
4V @ 250µA
19nC @ 10V
570pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
280 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STF24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque20.688
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
4V @ 250µA
29nC @ 10V
1060pF @ 100V
±25V
-
30W (Tc)
190 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IRF3710SPBF
Infineon Technologies

MOSFET N-CH 100V 57A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque39.048
MOSFET (Metal Oxide)
100V
57A (Tc)
10V
4V @ 250µA
130nC @ 10V
3130pF @ 25V
±20V
-
200W (Tc)
23 mOhm @ 28A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDS6575
Fairchild/ON Semiconductor

MOSFET P-CH 20V 10A 8-SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque88.068
MOSFET (Metal Oxide)
20V
10A (Ta)
2.5V, 4.5V
1.5V @ 250µA
74nC @ 4.5V
4951pF @ 10V
±8V
-
2.5W (Ta)
13 mOhm @ 10A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDB5800
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6625pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 242W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque40.956
MOSFET (Metal Oxide)
60V
14A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
6625pF @ 15V
±20V
-
242W (Tc)
6 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
QM2411K-ML
MOSLEADER

Single P -20V -3A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FCB20N60-F085
onsemi

MOSFET N-CH 600V 20A TO263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 198mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
5V @ 250µA
102 nC @ 10 V
3080 pF @ 25 V
±30V
-
341W (Tc)
198mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G3R20MT12N
GeneSiC Semiconductor

SIC MOSFET N-CH 105A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 365W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
pacote: -
Estoque696
SiCFET (Silicon Carbide)
1200 V
105A (Tc)
15V
2.69V @ 15mA
219 nC @ 15 V
5873 pF @ 800 V
+20V, -10V
-
365W (Tc)
24mOhm @ 60A, 15V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
SQJQ141EL-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 40 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: PowerPAK® 8 x 8
pacote: -
Estoque7.065
MOSFET (Metal Oxide)
40 V
390A (Tc)
4.5V, 10V
2.5V @ 250µA
731 nC @ 10 V
62190 pF @ 25 V
±20V
-
600W (Tc)
2mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
SQD10N30-330H_GE3
Vishay Siliconix

MOSFET N-CH 300V 10A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque6.591
MOSFET (Metal Oxide)
300 V
10A (Tc)
10V
4.4V @ 250µA
47 nC @ 10 V
2190 pF @ 25 V
±30V
-
107W (Tc)
330mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
NVTYS003N04CLTWG
onsemi

T6 40V N-CH LL IN LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
pacote: -
Request a Quote
MOSFET (Metal Oxide)
40 V
23A (Ta), 106A (Tc)
4.5V, 10V
2V @ 60µA
36 nC @ 10 V
2240 pF @ 25 V
±20V
-
3.2W (Ta), 69W (Tc)
3.4mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
PJQ5437E-AU_R2_006A1
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
30 V
11.8A (Ta), 42A (Tc)
4.5V, 10V
2.5V @ 250µA
32 nC @ 10 V
1270 pF @ 25 V
±25V
-
3.3W (Ta), 42W (Tc)
15mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
EPC2203
EPC

GANFET N-CH 80V 1.7A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
  • Vgs (Max): +5.75V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Request a Quote
GaNFET (Gallium Nitride)
80 V
1.7A (Ta)
5V
2.5V @ 600µA
0.83 nC @ 5 V
88 pF @ 50 V
+5.75V, -4V
-
-
80mOhm @ 1A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
STP26N65DM2
STMicroelectronics

MOSFET N-CH 650V 20A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: -
Estoque2.574
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 250µA
35.5 nC @ 10 V
1480 pF @ 100 V
±25V
-
170W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IXTK240N075L2
IXYS

MOSFET N-CH 75V 240A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
pacote: -
Request a Quote
MOSFET (Metal Oxide)
75 V
240A (Tc)
10V
4.5V @ 3mA
546 nC @ 10 V
19000 pF @ 25 V
±20V
-
960W (Tc)
7mOhm @ 120A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA