Página 1055 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.055/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPD07N60S5T
Infineon Technologies

MOSFET N-CH 600V 7.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.920
MOSFET (Metal Oxide)
600V
7.3A (Tc)
10V
5.5V @ 350µA
35nC @ 10V
970pF @ 25V
±20V
-
83W (Tc)
600 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7136DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacote: PowerPAK? SO-8
Estoque18.012
MOSFET (Metal Oxide)
20V
30A (Tc)
4.5V, 10V
3V @ 250µA
78nC @ 10V
3380pF @ 10V
±20V
-
5W (Ta), 39W (Tc)
3.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI4892DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque1.481.688
MOSFET (Metal Oxide)
30V
8.8A (Ta)
4.5V, 10V
800mV @ 250µA (Min)
10.5nC @ 5V
-
±20V
-
1.6W (Ta)
12 mOhm @ 12.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
FDU8586
Fairchild/ON Semiconductor

MOSFET N-CH 20V 35A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque4.208
MOSFET (Metal Oxide)
20V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
48nC @ 10V
2480pF @ 10V
±20V
-
77W (Tc)
5.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
PHD21N06LT,118
NXP

MOSFET N-CH 55V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.720
MOSFET (Metal Oxide)
55V
19A (Tc)
5V, 10V
2V @ 1mA
9.4nC @ 5V
650pF @ 25V
±15V
-
56W (Tc)
70 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFIZ46G
Vishay Siliconix

MOSFET N-CH 50V TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque3.232
MOSFET (Metal Oxide)
50V
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
IRFR320TRR
Vishay Siliconix

MOSFET N-CH 400V 3.1A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.536
MOSFET (Metal Oxide)
400V
3.1A (Tc)
10V
4V @ 250µA
20nC @ 10V
350pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
1.8 Ohm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB180N04S302ATMA1
Infineon Technologies

MOSFET N-CH 40V 180A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque3.904
MOSFET (Metal Oxide)
40V
180A (Tc)
10V
4V @ 230µA
210nC @ 10V
14300pF @ 25V
±20V
-
300W (Tc)
1.5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPA60R280E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 13.8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque7.472
MOSFET (Metal Oxide)
600V
13.8A (Tc)
10V
3.5V @ 430µA
43nC @ 10V
950pF @ 100V
±20V
-
32W (Tc)
280 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
BSZ0501NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 25A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque5.024
MOSFET (Metal Oxide)
30V
25A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
33nC @ 10V
2000pF @ 15V
±20V
-
2.1W (Ta), 50W (Tc)
2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IPD80N04S306BATMA1
Infineon Technologies

MOSFET N-CHANNEL_30/40V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque3.872
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFT80N20Q
IXYS

MOSFET N-CH 200V 80A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque5.344
MOSFET (Metal Oxide)
200V
80A (Tc)
10V
4V @ 4mA
180nC @ 10V
4600pF @ 25V
±20V
-
360W (Tc)
28 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot IXKH24N60C5
IXYS

MOSFET N-CH 600V 24A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXKH)
  • Package / Case: TO-3P-3 Full Pack
pacote: TO-3P-3 Full Pack
Estoque103.464
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
3.5V @ 790µA
52nC @ 10V
2000pF @ 100V
±20V
Super Junction
-
165 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXKH)
TO-3P-3 Full Pack
IXTP1R6N100D2
IXYS

MOSFET N-CH 1000V 1.6A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque4.064
MOSFET (Metal Oxide)
1000V
1.6A (Tc)
10V
-
27nC @ 5V
645pF @ 25V
±20V
Depletion Mode
100W (Tc)
10 Ohm @ 800mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AOTF11N62
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 620V 11A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.048
MOSFET (Metal Oxide)
620V
11A (Tc)
10V
4.5V @ 250µA
37nC @ 10V
1990pF @ 25V
±30V
-
50W (Tc)
650 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
DMN3110LCP3-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V X2-DSN1006

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.52nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
pacote: 3-XFDFN
Estoque5.568
MOSFET (Metal Oxide)
30V
3.2A (Ta)
1.8V, 8V
1.1V @ 250µA
1.52nC @ 4.5V
150pF @ 15V
12V
-
1.38W
69 mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
hot STB18NM80
STMicroelectronics

MOSFET N-CH 800V 17A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.960
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
5V @ 250µA
70nC @ 10V
2070pF @ 50V
±25V
-
190W (Tc)
295 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMZB290UNE,315
Nexperia USA Inc.

MOSFET N-CH 20V 1A DFN1006B-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN1006B (0.6x1)
  • Package / Case: 3-XFDFN
pacote: 3-XFDFN
Estoque3.440
MOSFET (Metal Oxide)
20V
1A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.68nC @ 4.5V
83pF @ 10V
±8V
-
360mW (Ta), 2.7W (Tc)
380 mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-DFN1006B (0.6x1)
3-XFDFN
AUIRLS8409-7P
Infineon Technologies

MOSFET NCH 40V 240A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 266nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 16488pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
pacote: TO-263-7, D2Pak (6 Leads + Tab)
Estoque9.960
MOSFET (Metal Oxide)
40V
240A (Tc)
4.5V, 10V
2.4V @ 250µA
266nC @ 4.5V
16488pF @ 25V
±16V
-
375W (Tc)
0.75 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab)
IPS65R1K5CEAKMA1
Infineon Technologies

MOSFET N-CH 650V TO-251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque29.304
MOSFET (Metal Oxide)
650V
3.1A (Tc)
10V
3.5V @ 100µA
10.5nC @ 10V
225pF @ 100V
±20V
-
28W (Tc)
1.5 Ohm @ 1A, 10V
-40°C ~ 150°C (TJ)
Through Hole
TO-251
TO-251-3 Stub Leads, IPak
IPP045N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque77.052
MOSFET (Metal Oxide)
100V
100A (Tc)
6V, 10V
3.5V @ 150µA
117nC @ 10V
8410pF @ 50V
±20V
-
214W (Tc)
4.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
NTMFS6H848NLT1G
onsemi

MOSFET N-CH 80V 13A/59A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: -
Request a Quote
MOSFET (Metal Oxide)
80 V
13A (Ta), 59A (Tc)
4.5V, 10V
2V @ 70µA
25 nC @ 10 V
1420 pF @ 40 V
±20V
-
3.7W (Ta), 73W (Tc)
8.8mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
IPW60R099C6FKSA1
Infineon Technologies

MOSFET N-CH 600V 37.9A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
pacote: -
Estoque1.998
MOSFET (Metal Oxide)
600 V
37.9A (Tc)
10V
3.5V @ 1.21mA
119 nC @ 10 V
2660 pF @ 100 V
±20V
-
278W (Tc)
99mOhm @ 18.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
NVD6495NLT4G
onsemi

MOSFET N-CH 100V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
100 V
25A (Tc)
4.5V, 10V
2V @ 250µA
35 nC @ 10 V
1024 pF @ 25 V
±20V
-
83W (Tc)
50mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
STS3401A-ML
MOSLEADER

Single-P -30V -3.2A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP32D9UFA-7B
Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN0806

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0806-3
  • Package / Case: 3-XFDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
210mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.35 nC @ 4.5 V
17 pF @ 15 V
±12V
-
350mW (Ta)
5Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0806-3
3-XFDFN
STWA72N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 66A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
66A (Tc)
10V
5V @ 250µA
121 nC @ 10 V
5508 pF @ 100 V
±25V
-
446W (Tc)
42mOhm @ 33A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
630A
Goford Semiconductor

MOSFET N-CH 200V 11A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
-
11A (Tc)
10V
3V @ 250µA
-
-
±20V
-
83W (Tc)
280mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63