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Transistores - FET, MOSFET - RF

Registros 3.855
Página  59/138
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB191501EV1XWSA1
Infineon Technologies

FET RF LDMOS 150W H36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
pacote: 2-Flatpack, Fin Leads
Estoque7.904
1.99GHz
18dB
30V
-
-
1.2A
150W
65V
2-Flatpack, Fin Leads
H-36248-2
BLF7G15LS-300P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 45A
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
pacote: SOT539B
Estoque2.048
1.47GHz ~ 1.51GHz
18dB
28V
45A
-
2.6A
85W
65V
SOT539B
CDFM4
BLF6G27LS-135,112
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 34A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacote: SOT-502B
Estoque3.424
2.5GHz ~ 2.7GHz
16dB
32V
34A
-
1.2A
20W
65V
SOT-502B
SOT502B
MRF6S19060NBR1
NXP

FET RF 68V 1.93GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610mA
  • Power - Output: 12W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacote: TO-272BB
Estoque3.584
1.93GHz
16dB
28V
-
-
610mA
12W
68V
TO-272BB
TO-272 WB-4
MRF5S19090HSR5
NXP

FET RF 65V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacote: NI-780S
Estoque6.864
1.93GHz ~ 1.99GHz
14.5dB
28V
-
-
850mA
18W
65V
NI-780S
NI-780S
J300
Fairchild/ON Semiconductor

JFET N-CH 25V TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque4.832
-
-
-
-
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PTFC262157SHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.064
-
-
-
-
-
-
-
-
-
-
2729GN-270
Microsemi Corporation

FET RF N-CH 150V 2.9GHZ 55-QP

  • Transistor Type: N-Channel
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 13.3dB ~ 13.8dB
  • Voltage - Test: 60V
  • Current Rating: 5mA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 304W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
pacote: 55QP
Estoque3.360
2.7GHz ~ 2.9GHz
13.3dB ~ 13.8dB
60V
5mA
-
500mA
304W
150V
55QP
55QP
BLS6G3135-120,112
Ampleon USA Inc.

RF FET LDMOS 60V 11DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 3.1GHz ~ 3.5GHz
  • Gain: 11dB
  • Voltage - Test: 32V
  • Current Rating: 7.2A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 120W
  • Voltage - Rated: 60V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacote: SOT-502A
Estoque5.552
3.1GHz ~ 3.5GHz
11dB
32V
7.2A
-
100mA
120W
60V
SOT-502A
LDMOST
BLF7G22LS-250P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
pacote: SOT539B
Estoque3.552
2.11GHz ~ 2.17GHz
18.5dB
28V
65A
-
1.9A
70W
65V
SOT539B
CDFM4
BLF8G09LS-270GWQ
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 718.5MHz ~ 725.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
pacote: SOT-1244C
Estoque4.672
718.5MHz ~ 725.5MHz
20dB
28V
-
-
2A
67W
65V
SOT-1244C
CDFM6
PD84008-E
STMicroelectronics

FET RF 25V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16.2dB
  • Voltage - Test: 7.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 2W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
pacote: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Estoque3.152
870MHz
16.2dB
7.5V
7A
-
250mA
2W
25V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
SMMBFJ310LT3G
ON Semiconductor

JFET N-CH 25V 10MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 10mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque6.096
-
-
-
10mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
CLF1G0035-100PU
Ampleon USA Inc.

RF FET HEMT 150V 14DB SOT1228A

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1228A
  • Supplier Device Package: LDMOST
pacote: SOT-1228A
Estoque7.824
3GHz
14dB
50V
-
-
100mA
100W
150V
SOT-1228A
LDMOST
LET20045C
STMicroelectronics

RF MOSFET N CH 80V 12A M243

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 13.3dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 54W
  • Voltage - Rated: 80V
  • Package / Case: M243
  • Supplier Device Package: M243
pacote: M243
Estoque4.432
2GHz
13.3dB
28V
12A
-
500mA
54W
80V
M243
M243
BLP8G21S-160PVY
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12211

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.88GHz ~ 1.92GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1221-1
  • Supplier Device Package: 6-HSOPF
pacote: SOT-1221-1
Estoque5.344
1.88GHz ~ 1.92GHz
17.5dB
28V
-
-
600mA
20W
65V
SOT-1221-1
6-HSOPF
IXZ210N50L2
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: 2MHz ~ 110MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 390W
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: -
pacote: 6-SMD, Flat Lead Exposed Pad
Estoque6.972
2MHz ~ 110MHz
-
-
1mA
-
-
390W
500V
6-SMD, Flat Lead Exposed Pad
-
hot 2N5486
Central Semiconductor Corp

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 30mA
  • Noise Figure: 4dB
  • Current - Test: 4mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque74.760
400MHz
-
15V
30mA
4dB
4mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BLA9H0912L-250U
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT502A

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 250W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
pacote: -
Estoque33
960MHz ~ 1.215GHz
22dB
50 V
1.4µA
-
100 mA
250W
106 V
SOT-502A
SOT502A
MMRF2011NT1
NXP

RF MOSFET LDMOS 24QFN

  • Transistor Type: LDMOS
  • Frequency: 728MHz ~ 960MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1.6W
  • Voltage - Rated: 28 V
  • Package / Case: 24-PowerQFN
  • Supplier Device Package: 24-PQFN-EP (8x8)
pacote: -
Request a Quote
728MHz ~ 960MHz
-
-
-
-
-
1.6W
28 V
24-PowerQFN
24-PQFN-EP (8x8)
MRF173
MACOM Technology Solutions

RF MOSFET 28V 211-11

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 150MHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 9A
  • Noise Figure: 1.5dB
  • Current - Test: 50 mA
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
pacote: -
Request a Quote
150MHz
13dB
28 V
9A
1.5dB
50 mA
80W
65 V
211-11, Style 2
211-11, Style 2
PXFE211507FC-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248G-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 170W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248G-4/2
  • Supplier Device Package: H-37248G-4/2
pacote: -
Request a Quote
2.11GHz ~ 2.17GHz
18dB
28 V
10µA
-
900 mA
170W
65 V
H-37248G-4/2
H-37248G-4/2
A3I35D012WNR1
NXP Semiconductors

RF MOSFET LDMOS 28V TO270-17

  • Transistor Type: LDMOS (Dual)
  • Frequency: 3.2GHz ~ 4GHz
  • Gain: 27.8dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 138 mA
  • Power - Output: 1.8W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17
pacote: -
Request a Quote
3.2GHz ~ 4GHz
27.8dB
28 V
10µA
-
138 mA
1.8W
65 V
TO-270-17 Variant, Flat Leads
TO-270WB-17
PXAC201202FC-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 240 mA
  • Power - Output: 16W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacote: -
Request a Quote
2.2GHz
17dB
28 V
-
-
240 mA
16W
65 V
H-37248-4
H-37248-4
PXAC182002FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CGHV40180P
MACOM Technology Solutions

RF MOSFET HEMT 50V 440206

  • Transistor Type: HEMT
  • Frequency: 2GHz
  • Gain: 19.8dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 180W
  • Voltage - Rated: 125 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
pacote: -
Request a Quote
2GHz
19.8dB
50 V
-
-
1 A
180W
125 V
440206
440206
MWT-PH15F
CML Microcircuits

RF MOSFET MESFET 4V CHIP

  • Transistor Type: MESFET
  • Frequency: 28GHz
  • Gain: 12dB
  • Voltage - Test: 4 V
  • Current Rating: 170mA
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 28.5dBm
  • Voltage - Rated: 6 V
  • Package / Case: Die
  • Supplier Device Package: Chip
pacote: -
Request a Quote
28GHz
12dB
4 V
170mA
-
170 mA
28.5dBm
6 V
Die
Chip
RF3L05250CB4
STMicroelectronics

RF MOSFET LDMOS 28V LBB

  • Transistor Type: LDMOS
  • Frequency: 1GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 250W
  • Voltage - Rated: 90 V
  • Package / Case: LBB
  • Supplier Device Package: LBB
pacote: -
Estoque33
1GHz
18dB
28 V
1µA
-
100 mA
250W
90 V
LBB
LBB