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Transistores - FET, MOSFET - Arranjos

Registros 5.684
Página  99/203
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRFI4024H-117P
Infineon Technologies

MOSFET 2N-CH 55V 11A TO-220FP-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
  • Power - Max: 14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack
  • Supplier Device Package: TO-220-5 Full-Pak
pacote: TO-220-5 Full Pack
Estoque9.636
Standard
55V
11A
60 mOhm @ 7.7A, 10V
4V @ 25µA
13nC @ 10V
320pF @ 50V
14W
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack
TO-220-5 Full-Pak
hot AO4924L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A/7.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque20.004
Logic Level Gate
30V
-
15.8 mOhm @ 9A, 10V
2.4V @ 250µA
31nC @ 10V
1885pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
pacote: 8-SOIC (0.173", 4.40mm Width)
Estoque3.280
Logic Level Gate
30V
6A
21 mOhm @ 3A, 10V
2.3V @ 1mA
16nC @ 10V
840pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot SI5511DC-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 3.1W, 2.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacote: 8-SMD, Flat Lead
Estoque108.000
Logic Level Gate
30V
4A, 3.6A
55 mOhm @ 4.8A, 4.5V
2V @ 250µA
7.1nC @ 5V
435pF @ 15V
3.1W, 2.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot ZXMD63N03XTC
Diodes Incorporated

MOSFET 2N-CH 30V 2.3A 8MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Estoque33.624
Logic Level Gate
30V
2.3A
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot FDC6036P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
  • Supplier Device Package: SuperSOT?-6
pacote: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Estoque2.242.020
Logic Level Gate
20V
5A
44 mOhm @ 5A, 4.5V
1.5V @ 250µA
14nC @ 4.5V
992pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SSOT Flat-lead, SuperSOT?-6 FLMP
SuperSOT?-6
IPG20N06S4L11AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
pacote: 8-PowerVDFN
Estoque4.096
Logic Level Gate
60V
20A
11.2 mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
APTC90HM60T3G
Microsemi Corporation

MOSFET 4N-CH 900V 59A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacote: SP3
Estoque7.344
Super Junction
900V
59A
60 mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot DMN3033LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque154.212
Logic Level Gate
30V
6.9A
20 mOhm @ 6.9A, 10V
2.1V @ 250µA
13nC @ 10V
725pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI1965DH-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacote: 6-TSSOP, SC-88, SOT-363
Estoque78.000
Logic Level Gate
12V
1.3A
390 mOhm @ 1A, 4.5V
1V @ 250µA
4.2nC @ 8V
120pF @ 6V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
DMN2004DWKQ-7
Diodes Incorporated

MOSFET 2NCH 20V 540MA SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.344
Standard
20V
540mA (Ta)
550 mOhm @ 540mA, 4.5V
1V @ 250µA
0.95nC @ 8V
150pF @ 16V
200mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PMDT670UPE,115
Nexperia USA Inc.

MOSFET 2P-CH 20V 0.55A SOT666

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 550mA
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacote: SOT-563, SOT-666
Estoque5.568
Logic Level Gate
20V
550mA
850 mOhm @ 400mA, 4.5V
1.3V @ 250µA
1.14nC @ 4.5V
87pF @ 10V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
NX3008PBKV,115
Nexperia USA Inc.

MOSFET 2P-CH 30V 0.22A SOT666

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacote: SOT-563, SOT-666
Estoque4.432
Logic Level Gate
30V
220mA
4.1 Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72nC @ 4.5V
46pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
NTMFD4C86NT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
pacote: 8-PowerTDFN
Estoque2.336
Standard
30V
11.3A, 18.1A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1153pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
SISB46DN-T1-GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
  • Power - Max: 23W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacote: PowerPAK? 1212-8 Dual
Estoque22.164
Standard
40V
34A (Tc)
11.71 mOhm @ 5A, 10V
2.2V @ 250µA
11nC @ 4.5V
1100pF @ 20V
23W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot FDC6304P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.46A SSOT-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 460mA
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacote: SOT-23-6 Thin, TSOT-23-6
Estoque917.076
Logic Level Gate
25V
460mA
1.1 Ohm @ 500mA, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V
62pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
hot SI4963BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque102.660
Logic Level Gate
20V
4.9A
32 mOhm @ 6.5A, 4.5V
1.4V @ 250µA
21nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6562CDQ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6.7A 8-TSSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 1.6W, 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque13.068
Logic Level Gate
20V
6.7A, 6.1A
22 mOhm @ 5.7A, 4.5V
1.5V @ 250µA
23nC @ 10V
850pF @ 10V
1.6W, 1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDS4897C
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque182.640
Logic Level Gate
40V
6.2A, 4.4A
29 mOhm @ 6.2A, 10V
3V @ 250µA
20nC @ 10V
760pF @ 20V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PJS6839_S1_00001
Panjit International Inc.

MOSFET 2P-CH 60V 0.3A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacote: -
Estoque30.081
-
60V
300mA (Ta)
4Ohm @ 500mA, 10V
2.5V @ 250µA
1.1nC @ 4.5V
51pF @ 25V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
NVMFD5C470NWFT1G
onsemi

MOSFET 2N-CH 40V 11.7A/36A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Power - Max: 3.1W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacote: -
Estoque4.500
-
40V
11.7A (Ta), 36A (Tc)
11.7mOhm @ 10A, 10V
3.5V @ 250µA
8nC @ 10V
420pF @ 25V
3.1W (Ta), 28W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DI052N04PQ2-AQ
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2979pF @ 25V
  • Power - Max: 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: TDSON-8-4
pacote: -
Request a Quote
Logic Level Gate
40V
52A (Tc)
4.7mOhm @ 10A, 10V
2.5V @ 250µA
48nC @ 10V
2979pF @ 25V
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
TDSON-8-4
SQ1563AEH-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 20V 0.85A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
pacote: -
Estoque10.518
-
20V
850mA (Tc)
280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
1.5V @ 250µA
1.25nC @ 4.5V, 1.33nC @ 4.5V
89pF @ 10V, 84pF @ 10V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
IPG20N04S418AATMA1
Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
  • Power - Max: 26W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
pacote: -
Request a Quote
-
40V
20A (Tc)
18.4mOhm @ 17A, 10V
4V @ 8µA
15nC @ 10V
789pF @ 25V
26W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
SI4511DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: -
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Logic Level Gate
20V
7.2A, 4.6A
14.5mOhm @ 9.6A, 10V
1.8V @ 250µA
18nC @ 4.5V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN12M7UCA10-7
Diodes Incorporated

MOSFET 2N-CH 20.2A X4-DSN3015-10

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: X4-DSN3015-10
pacote: -
Estoque14.910
-
-
20.2A (Ta)
2.75mOhm @ 6A, 4.5V
1.4V @ 1.11mA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
X4-DSN3015-10
DMTH6015LDVW-7
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 1.46W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
pacote: -
Request a Quote
-
60V
9.2A (Ta), 24.5A (Tc)
20.5mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
1.46W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
TPC8207-TE12L
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
pacote: -
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Logic Level Gate
20V
6A
20mOhm @ 4.8A, 4V
1.2V @ 200µA
22nC @ 5V
2010pF @ 10V
750mW
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)