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Transistores - FET, MOSFET - Arranjos

Registros 5.684
Página  95/203
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7311TR
Infineon Technologies

MOSFET 2N-CH 20V 6.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque376.068
Logic Level Gate
20V
6.6A
29 mOhm @ 6A, 4.5V
700mV @ 250µA
27nC @ 4.5V
900pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4614BL_103
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.312
Logic Level Gate
40V
6A, 5A
30 mOhm @ 6A, 10V
3V @ 250µA
10.8nC @ 10V
650pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM50DUM25TG
Microsemi Corporation

MOSFET 2N-CH 500V 149A LP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 149A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacote: SP4
Estoque3.648
Standard
500V
149A
25 mOhm @ 74.5A, 10V
4V @ 8mA
1200nC @ 10V
29600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot FDW2503N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque92.616
Logic Level Gate
20V
5.5A
21 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1082pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot ZXMN6A11DN8TC
Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque1.044.864
Logic Level Gate
60V
2.5A
120 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
5.7nC @ 10V
330pF @ 40V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
VKM60-01P1
IXYS

MOSFET 4N-CH 100V 75A ECO-PAC2

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Power - Max: 300W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
pacote: ECO-PAC2
Estoque3.136
Standard
100V
75A
25 mOhm @ 500mA, 10V
4V @ 4mA
260nC @ 10V
4500pF @ 25V
300W
-40°C ~ 150°C (TJ)
Through Hole
ECO-PAC2
ECO-PAC2
APTM100DSK35T3G
Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacote: SP3
Estoque3.920
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
ALD110808ASCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
  • Vgs(th) (Max) @ Id: 810mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.154", 3.90mm Width)
Estoque3.168
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.8V
810mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
ALD210802SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacote: 16-SOIC (0.154", 3.90mm Width)
Estoque7.440
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
ALD212904PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacote: 8-DIP (0.300", 7.62mm)
Estoque3.504
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot SI4922BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque29.328
Standard
30V
8A
16 mOhm @ 5A, 10V
1.8V @ 250µA
62nC @ 10V
2070pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TSM6502CR RLG
TSC America Inc.

MOSFET, COMPLEMENTARY, N-CHANNEL

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
  • Power - Max: 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
pacote: 8-PowerTDFN
Estoque4.224
Standard
60V
24A (Tc), 18A (Tc)
34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
2.5V @ 250µA
10.3nC @ 4.5V, 9.5nC @ 4.5V
1159pF @ 30V, 930pF @ 30V
40W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
APTC60AM18SCG
Microsemi Corporation

MOSFET 2N-CH 600V 143A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 143A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Power - Max: 833W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacote: SP6
Estoque7.376
Standard
600V
143A
18 mOhm @ 71.5A, 10V
3.9V @ 4mA
1036nC @ 10V
28000pF @ 25V
833W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
FDMQ86530L
Fairchild/ON Semiconductor

MOSFET 4N-CH 60V 8A MLP4.5X5

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WDFN Exposed Pad
  • Supplier Device Package: 12-MLP (5x4.5)
pacote: 12-WDFN Exposed Pad
Estoque6.960
Logic Level Gate
60V
8A
17.5 mOhm @ 8A, 10V
3V @ 250µA
33nC @ 10V
2295pF @ 30V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
12-WDFN Exposed Pad
12-MLP (5x4.5)
hot DMC3016LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 8.2A/6.2A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.480
Logic Level Gate
30V
8.2A, 6.2A
16 mOhm @ 12A, 10V
2.3V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDC6320C
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SSOT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-SSOT
pacote: SOT-23-6 Thin, TSOT-23-6
Estoque432.000
Logic Level Gate
25V
220mA, 120mA
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-SSOT
NVMFD5C672NLWFT1G
onsemi

MOSFET 2N-CH 60V 12A/49A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
  • Power - Max: 3.1W (Ta), 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacote: -
Estoque4.125
-
60V
12A (Ta), 49A (Tc)
11.9mOhm @ 10A, 10V
2.2V @ 30µA
5.7nC @ 4.5V
793pF @ 25V
3.1W (Ta), 45W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTJD4401NT1G-001
onsemi

MOSFET 2N-CH 20V 630MA SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
  • Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacote: -
Request a Quote
-
20V
630mA (Ta)
375mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
CAB011A12GM3T
Wolfspeed, Inc.

SIC MODULE 1200V

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
  • Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 34mA
  • Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
  • Power - Max: 10mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacote: -
Request a Quote
-
1200V (1.2kV)
141A (Tj)
13.9mOhm @ 150A, 15V
3.9V @ 34mA
354nC @ 15V
11000pF @ 1000V
10mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FDG6332C-PG
onsemi

MOSFET N/P-CH 20V 0.7A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacote: -
Request a Quote
-
20V
700mA (Ta), 600mA (Ta)
300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V, 2nC @ 4.5V
113pF @ 10V, 114pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
FW216-NMM-TL-E
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NTMFD5C680NLT1G
onsemi

MOSFET 2N-CH 60V 7.5A/26A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W (Ta), 19W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacote: -
Estoque4.500
-
60V
7.5A (Ta), 26A (Tc)
28mOhm @ 5A, 10V
2.2V @ 13µA
5nC @ 10V
350pF @ 25V
3W (Ta), 19W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
AOCR32326
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 28A 8RIGIDCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, No Lead
  • Supplier Device Package: 8-RigidCSP (6x2.5)
pacote: -
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-
30V
28A
-
2.3V @ 250µA
142nC @ 10V
-
2.75W
-55°C ~ 150°C
Surface Mount
8-SMD, No Lead
8-RigidCSP (6x2.5)
AOND32324
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 13A/16A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
  • Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
pacote: -
Estoque9.000
-
30V
13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
14mOhm @ 12A, 10V
2.5V @ 250µA
20nC @ 10V
760pF @ 15V, 1995pF @ 15V
3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
DF23MR12W1M1B11BPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
  • Vgs(th) (Max) @ Id: 5.55V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
pacote: -
Estoque36
-
1200V (1.2kV)
25A (Tj)
45mOhm @ 25A, 15V (Typ)
5.55V @ 10mA
62nC @ 15V
1840pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1BM-2
AONX38320
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 27A/66A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
  • Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
pacote: -
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-
30V
27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
2.1V @ 250µA, 1.9V @ 250µA
26nC @ 10V, 123nC @ 10V
1220pF @ 15V, 6260pF @ 15V
4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
G60N04D52
Goford Semiconductor

MOSFET 40V 35A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
  • Power - Max: 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (4.9x5.75)
pacote: -
Estoque15.000
-
40V
35A (Tc)
9mOhm @ 20A, 10V
2.5V @ 250µA
27nC @ 10V
1998pF @ 20V
20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (4.9x5.75)
TPCP8407-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
  • Power - Max: 690mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8
pacote: -
Estoque9.984
-
40V
5A (Ta), 4A (Ta)
36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
3V @ 1mA
11.8nC @ 10V, 18nC @ 10V
505pF @ 10V, 810pF @ 10V
690mW (Ta)
150°C
Surface Mount
8-SMD, Flat Lead
PS-8