Página 64 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7304Q	Infineon Technologies	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	pacote: 8-SOIC	Estoque2.560	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	1.5V @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
AON5802ALS	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DUAL DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x5)	pacote: 6-WDFN Exposed Pad	Estoque134.220	-	-	-	-	-	-	-	-	-	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x5)
AO4807L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque2.000	Logic Level Gate	30V	6A	35 mOhm @ 6A, 10V	2.4V @ 250µA	16nC @ 10V	760pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO3415B	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8-SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque6.192	-	-	-	-	-	-	-	-	-	-	-	-
SI7964DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 6.1A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque6.224	Standard	60V	6.1A	23 mOhm @ 9.6A, 10V	4.5V @ 250µA	65nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ALD212908APAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	pacote: 8-DIP (0.300", 7.62mm)	Estoque7.728	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI4618DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SO FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Power - Max: 1.98W, 4.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque2.912	Standard	30V	8A, 15.2A	17 mOhm @ 8A, 10V	2.5V @ 1mA	44nC @ 10V	1535pF @ 15V	1.98W, 4.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMFD4901NFT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.1W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	pacote: 8-PowerTDFN	Estoque6.112	Logic Level Gate	30V	10.3A, 17.9A	6.5 mOhm @ 10A, 10V	2.2V @ 250µA	9.7nC @ 4.5V	1150pF @ 15V	1.1W, 1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMD6N04R2G	ON Semiconductor	MOSFET 2N-CH 40V 4.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.29W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque6.416	Standard	40V	4.6A	34 mOhm @ 5.8A, 10V	3V @ 250µA	30nC @ 10V	900pF @ 32V	1.29W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLUD3A50PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 2.8A UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	pacote: 6-UDFN Exposed Pad	Estoque7.264	Logic Level Gate	20V	2.8A	50 mOhm @ 4A, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-UDFN (2x2)
FDMC7208S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/16A PWR33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	pacote: 8-PowerWDFN	Estoque6.656	Logic Level Gate	30V	12A, 16A	9 mOhm @ 12A, 10V	3V @ 250µA	18nC @ 10V	1130pF @ 15V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
NVMFD5853NLT1G	ON Semiconductor	MOSFET 2N-CH 40V 12A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	pacote: 8-PowerTDFN	Estoque18.000	Logic Level Gate	40V	12A	10 mOhm @ 15A, 10V	2.4V @ 250µA	23nC @ 10V	1100pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDMS9620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A/10A PWR56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	pacote: 8-PowerWDFN	Estoque661.428	Logic Level Gate	30V	7.5A, 10A	21.5 mOhm @ 7.5A, 10V	3V @ 250µA	14nC @ 10V	665pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMS3626S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/25A 8PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	pacote: 8-PowerTDFN	Estoque30.576	Logic Level Gate	25V	17.5A, 25A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
DMN1029UFDB-7	Diodes Incorporated	MOSFET 2N-CH 12V 5.6A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacote: 6-UDFN Exposed Pad	Estoque27.342	Standard	12V	5.6A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SI7949DP-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque10.872	Logic Level Gate	60V	3.2A	64 mOhm @ 5A, 10V	3V @ 250µA	40nC @ 10V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SH8KA7GZETB	Rohm Semiconductor	MOSFET 2N-CH 30V 15A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: -	Estoque7.461	-	30V	15A (Ta)	9.3mOhm @ 15A, 10V	2.5V @ 1mA	81nC @ 10V	3320pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN52D0UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacote: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
VN2410M	Siliconix	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN33D8LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacote: -	Estoque8.970	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI3134KDW-TP	Micro Commercial Co	MOSFET 2N-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: -	Estoque107.949	-	20V	750mA	380mOhm @ 650mA, 4.5V	1.1V @ 250µA	20nC @ 4.5V	120pF @ 16V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP2110UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacote: -	Request a Quote	-	20V	3.2A (Ta)	75mOhm @ 2.8A, 4.5V	1V @ 250µA	12.7nC @ 8V	443pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
FDMS3616S	onsemi	MOSFET 2N-CH 25V 16A/18A POWER56 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A, 18A Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	pacote: -	Request a Quote	Logic Level Gate	25V	16A, 18A	6.6mOhm @ 16A, 10V	2.5V @ 250µA	27nC @ 10V	1765pF @ 13V	1W	-	Surface Mount	8-PowerTDFN	Power56
FF1MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque48	-	-	-	-	-	-	-	-	-	-	-	-
MSCMC120AM04CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 388A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 388A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 4V @ 90mA Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V Power - Max: 1754W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	pacote: -	Request a Quote	-	1200V (1.2kV)	388A (Tc)	5.7mOhm @ 300A, 20V	4V @ 90mA	966nC @ 20V	16700pF @ 1000V	1754W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
NVMFD5C478NLWFT1G	onsemi	MOSFET 2N-CH 40V 10.5A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	pacote: -	Estoque4.485	-	40V	10.5A (Ta), 29A (Tc)	14.5mOhm @ 7.5A, 10V	2.2V @ 20µA	8.1nC @ 10V	420pF @ 25V	3.1W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
SQ4284EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power - Max: 3.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Estoque14.481	-	40V	8A (Tc)	13.5mOhm @ 7A, 10V	2.5V @ 250µA	45nC @ 10V	2200pF @ 25V	3.9W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQS966ENW-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PWRPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	pacote: -	Estoque26.310	-	60V	6A (Tc)	36mOhm @ 1.25A, 10V	2.5V @ 250µA	8.8nC @ 10V	572pF @ 25V	27.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual
MSCSM120HM31CT3AG	Microchip Technology	SIC 4N-CH 1200V 89A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacote: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
EFC4K105NUZTDG	onsemi	MOSFET 2N-CH 22V 25A 10WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-WLCSP (3.4x1.96)	pacote: -	Estoque14.670	Logic Level Gate, 2.5V Drive	22V	25A (Ta)	3.55mOhm @ 5A, 4.5V	1.3V @ 1mA	43nC @ 3.8V	-	2.5W (Ta)	150°C (TJ)	Surface Mount	10-SMD, No Lead	10-WLCSP (3.4x1.96)

AUIRF7304Q

Infineon Technologies

MOSFET 2P-CH 20V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

pacote: 8-SOIC

Estoque2.560

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

1.5V @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

AON5802ALS

Alpha & Omega Semiconductor Inc.

MOSFET N-CH DUAL DFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x5)

pacote: 6-WDFN Exposed Pad

Estoque134.220

-

Surface Mount

6-WDFN Exposed Pad

6-DFN (2x5)

AO4807L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque2.000

Logic Level Gate

30V

6A

35 mOhm @ 6A, 10V

2.4V @ 250µA

16nC @ 10V

760pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO3415B

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque6.192

-

SI7964DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 6.1A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque6.224

Standard

60V

6.1A

23 mOhm @ 9.6A, 10V

4.5V @ 250µA

65nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

ALD212908APAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

pacote: 8-DIP (0.300", 7.62mm)

Estoque7.728

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SI4618DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Power - Max: 1.98W, 4.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque2.912

Standard

30V

8A, 15.2A

17 mOhm @ 8A, 10V

2.5V @ 1mA

44nC @ 10V

1535pF @ 15V

1.98W, 4.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTMFD4901NFT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 1.1W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

pacote: 8-PowerTDFN

Estoque6.112

Logic Level Gate

30V

10.3A, 17.9A

6.5 mOhm @ 10A, 10V

2.2V @ 250µA

9.7nC @ 4.5V

1150pF @ 15V

1.1W, 1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

NVMD6N04R2G

ON Semiconductor

MOSFET 2N-CH 40V 4.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.29W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque6.416

Standard

40V

4.6A

34 mOhm @ 5.8A, 10V

3V @ 250µA

30nC @ 10V

900pF @ 32V

1.29W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLUD3A50PZTBG

ON Semiconductor

MOSFET 2P-CH 20V 2.8A UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

pacote: 6-UDFN Exposed Pad

Estoque7.264

Logic Level Gate

20V

2.8A

50 mOhm @ 4A, 4.5V

1V @ 250µA

10.4nC @ 4.5V

920pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-UDFN (2x2)

FDMC7208S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/16A PWR33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

pacote: 8-PowerWDFN

Estoque6.656

Logic Level Gate

30V

12A, 16A

9 mOhm @ 12A, 10V

3V @ 250µA

18nC @ 10V

1130pF @ 15V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

NVMFD5853NLT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

pacote: 8-PowerTDFN

Estoque18.000

Logic Level Gate

40V

12A

10 mOhm @ 15A, 10V

2.4V @ 250µA

23nC @ 10V

1100pF @ 25V

3W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FDMS9620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A/10A PWR56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A
Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

pacote: 8-PowerWDFN

Estoque661.428

Logic Level Gate

30V

7.5A, 10A

21.5 mOhm @ 7.5A, 10V

3V @ 250µA

14nC @ 10V

665pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMS3626S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/25A 8PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

pacote: 8-PowerTDFN

Estoque30.576

Logic Level Gate

25V

17.5A, 25A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

DMN1029UFDB-7

Diodes Incorporated

MOSFET 2N-CH 12V 5.6A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacote: 6-UDFN Exposed Pad

Estoque27.342

Standard

12V

5.6A

29 mOhm @ 5A, 4.5V

1V @ 250µA

19.6nC @ 8V

914pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SI7949DP-T1-E3

Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque10.872

Logic Level Gate

60V

3.2A

64 mOhm @ 5A, 10V

3V @ 250µA

40nC @ 10V

-

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SH8KA7GZETB

Rohm Semiconductor

MOSFET 2N-CH 30V 15A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: -

Estoque7.461

-

30V

15A (Ta)

9.3mOhm @ 15A, 10V

2.5V @ 1mA

81nC @ 10V

3320pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN52D0UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacote: -

Request a Quote

-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

VN2410M

Siliconix

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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-

DMN33D8LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacote: -

Estoque8.970

-

30V

350mA (Ta)

2.4Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI3134KDW-TP

Micro Commercial Co

MOSFET 2N-CH 20V 0.75A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacote: -

Estoque107.949

-

20V

750mA

380mOhm @ 650mA, 4.5V

1.1V @ 250µA

20nC @ 4.5V

120pF @ 16V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP2110UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacote: -

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-

20V

3.2A (Ta)

75mOhm @ 2.8A, 4.5V

1V @ 250µA

12.7nC @ 8V

443pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

FDMS3616S

onsemi

MOSFET 2N-CH 25V 16A/18A POWER56

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 18A
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

pacote: -

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Logic Level Gate

25V

16A, 18A

6.6mOhm @ 16A, 10V

2.5V @ 250µA

27nC @ 10V

1765pF @ 13V

1W

-

Surface Mount

8-PowerTDFN

Power56

FF1MR12KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque48

-

MSCMC120AM04CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 388A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 388A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 4V @ 90mA
Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V
Power - Max: 1754W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

pacote: -

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-

1200V (1.2kV)

388A (Tc)

5.7mOhm @ 300A, 20V

4V @ 90mA

966nC @ 20V

16700pF @ 1000V

1754W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

NVMFD5C478NLWFT1G

onsemi

MOSFET 2N-CH 40V 10.5A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

pacote: -

Estoque4.485

-

40V

10.5A (Ta), 29A (Tc)

14.5mOhm @ 7.5A, 10V

2.2V @ 20µA

8.1nC @ 10V

420pF @ 25V

3.1W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

SQ4284EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power - Max: 3.9W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: -

Estoque14.481

-

40V

8A (Tc)

13.5mOhm @ 7A, 10V

2.5V @ 250µA

45nC @ 10V

2200pF @ 25V

3.9W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQS966ENW-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PWRPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Power - Max: 27.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8W Dual
Supplier Device Package: PowerPAK® 1212-8W Dual

pacote: -

Estoque26.310

-

60V

6A (Tc)

36mOhm @ 1.25A, 10V

2.5V @ 250µA

8.8nC @ 10V

572pF @ 25V

27.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerPAK® 1212-8W Dual

MSCSM120HM31CT3AG

Microchip Technology

SIC 4N-CH 1200V 89A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacote: -

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-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

EFC4K105NUZTDG

onsemi

MOSFET 2N-CH 22V 25A 10WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-WLCSP (3.4x1.96)

pacote: -

Estoque14.670

Logic Level Gate, 2.5V Drive

22V

25A (Ta)

3.55mOhm @ 5A, 4.5V

1.3V @ 1mA

43nC @ 3.8V

-

2.5W (Ta)

150°C (TJ)

Surface Mount

10-SMD, No Lead

10-WLCSP (3.4x1.96)