Página 154 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VQ1006P-E3	Vishay Siliconix	MOSFET 4N-CH 90V 0.4A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	pacote: -	Estoque4.192	Logic Level Gate	90V	400mA	4.5 Ohm @ 1A, 10V	2.5V @ 1mA	-	60pF @ 25V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
CSD75301W1015	Texas Instruments	MOSFET 2P-CH 20V 1.2A 6DSBGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Supplier Device Package: 6-DSBGA (1x1.5)	pacote: 6-UFBGA, DSBGA	Estoque7.072	Logic Level Gate	20V	1.2A	100 mOhm @ 1A, 4.5V	1V @ 250µA	2.1nC @ 4.5V	195pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, DSBGA	6-DSBGA (1x1.5)
IXTL2X240N055T	IXYS	MOSFET 2N-CH 55V 140A ISOPLUS I5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 140A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	pacote: ISOPLUSi5-Pak?	Estoque6.208	Standard	55V	140A	4.4 mOhm @ 50A, 10V	4V @ 250µA	170nC @ 10V	7600pF @ 25V	150W	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
ZXMC3AM832TA	Diodes Incorporated	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.7W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	pacote: 8-VDFN Exposed Pad	Estoque480.600	Logic Level Gate	30V	2.9A, 2.1A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.9nC @ 10V	190pF @ 25V	1.7W	-	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
IPG20N06S4L26AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 26 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power - Max: 33W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	pacote: 8-PowerVDFN	Estoque6.288	Logic Level Gate	60V	20A	26 mOhm @ 17A, 10V	2.2V @ 10µA	20nC @ 10V	1430pF @ 25V	33W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
GWM100-0085X1-SMD	IXYS	MOSFET 6N-CH 85V 103A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 103A Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	pacote: 17-SMD, Gull Wing	Estoque7.056	Standard	85V	103A	6.2 mOhm @ 75A, 10V	4V @ 250µA	114nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
FMP76-010T	IXYS	MOSFET N/P-CH 100V 62A/54A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 62A, 54A Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Power - Max: 89W, 132W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	pacote: i4-Pac?-5	Estoque3.520	Standard	100V	62A, 54A	11 mOhm @ 25A, 10V	4.5V @ 250µA	104nC @ 10V	5080pF @ 25V	89W, 132W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
QS8K51TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2A TSMT8 FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacote: 8-SMD, Flat Lead	Estoque2.368	-	30V	2A	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	TSMT8
AO4821	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 12V 9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque7.792	Logic Level Gate	12V	9A	19 mOhm @ 9A, 4.5V	850mV @ 250µA	23nC @ 4.5V	2100pF @ 6V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLUD3A260PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 1.3A UDFN6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	pacote: 6-UFDFN Exposed Pad	Estoque3.520	Logic Level Gate	20V	1.3A	200 mOhm @ 2A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	300pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
DMN63D1LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.25A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacote: TO-236-3, SC-59, SOT-23-3	Estoque4.480	Standard	60V	250mA	2 Ohm @ 500mA, 10V	2.5V @ 1mA	0.3nC @ 4.5V	30pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BUK7K25-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 27A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacote: SOT-1205, 8-LFPAK56	Estoque6.016	Standard	40V	27A	25 mOhm @ 5A, 10V	4V @ 1mA	7.9nC @ 10V	525pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NDS9945	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque270.228	Logic Level Gate	60V	3.5A	100 mOhm @ 3.5A, 10V	3V @ 250µA	30nC @ 10V	345pF @ 25V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTUD3174NZT5G	ON Semiconductor	MOSFET ARRAY 2NCH 20V SOT963 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Power - Max: 125mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacote: SOT-963	Estoque28.800	Standard	20V	220mA (Ta)	1.5 Ohm @ 100mA, 4.5V	1V @ 100µA	-	12.5pF @ 15V	125mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
FDC6401N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3A SSOT-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	pacote: SOT-23-6 Thin, TSOT-23-6	Estoque88.368	Logic Level Gate	20V	3A	70 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.6nC @ 4.5V	324pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
DMN3190LDW-7	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: 6-TSSOP, SC-88, SOT-363	Estoque386.094	Logic Level Gate	30V	1A	190 mOhm @ 1.3A, 10V	2.8V @ 250µA	2nC @ 10V	87pF @ 20V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AO4818BL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	-	30V	8A (Ta)	19mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN3732UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacote: -	Request a Quote	-	30V	1.1A (Ta)	460mOhm @ 200mA, 4.5V	0.95V @ 250µA	0.9nC @ 10V	40.8pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
CMLDM7002AG-TR-PBFREE	Central Semiconductor Corp	MOSFET 2N-CH 60V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacote: -	Estoque5.526	-	60V	280mA	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.59nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
AO4614BL	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	-	40V	6A (Ta), 5A (Ta)	30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V	3V @ 250µA	10.8nC @ 10V, 22nC @ 10V	650pF @ 20V, 1175pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NXH010P120MNF1PTNG	onsemi	SIC 2N-CH 1200V 114A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Power - Max: 250W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacote: -	Request a Quote	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
DMN11M2UCA14-7	Diodes Incorporated	MOSFET 2N-CH 12V 34A X2-TSN3027 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 870µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 6083pF @ 6V Power - Max: 950mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Supplier Device Package: X2-TSN3027-14	pacote: -	Request a Quote	-	12V	34A (Ta)	1.85mOhm @ 9.8A, 4.5V	1.4V @ 870µA	71nC @ 4V	6083pF @ 6V	950mW	-55°C ~ 150°C (TJ)	Surface Mount	14-SMD, No Lead	X2-TSN3027-14
DMNH6021SPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 8.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	pacote: -	Request a Quote	-	60V	8.2A (Ta), 32A(Tc)	25mOhm @ 15A, 10V	3V @ 250µA	20.1nC @ 10V	1143pF @ 25V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
NVMFD5C680NLT1G	onsemi	MOSFET 2N-CH 60V 7.5A/26A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	pacote: -	Request a Quote	-	60V	7.5A (Ta), 26A (Tc)	28mOhm @ 5A, 10V	2.2V @ 13µA	2nC @ 4.5V	350pF @ 25V	3W (Ta), 19W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO4616L_103	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8.1A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 7.1A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V, 30.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1573pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	-	30V	8.1A (Ta), 7.1A (Ta)	20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V	3V @ 250µA, 2.7V @ 250µA	19.2nC @ 10V, 30.9nC @ 10V	1250pF @ 15V, 1573pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM300NB06DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/25A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	pacote: -	Estoque10.734	-	60V	6A (Ta), 25A (Tc)	30mOhm @ 6A, 10V	4.5V @ 250µA	17nC @ 10V	1079pF @ 30V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
NDS8926	onsemi	MOSFET 2N-CH 20V 5.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Power - Max: 900mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacote: -	Request a Quote	Logic Level Gate	20V	5.5A	35mOhm @ 5.5A, 4.5V	1V @ 250µA	30nC @ 4.5V	760pF @ 10V	900mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN63D1LVQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 477mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacote: -	Request a Quote	-	60V	477mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 1mA	1.04nC @ 10V	41pF @ 30V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

VQ1006P-E3

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

pacote: -

Estoque4.192

Logic Level Gate

90V

400mA

4.5 Ohm @ 1A, 10V

2.5V @ 1mA

-

60pF @ 25V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

CSD75301W1015

Texas Instruments

MOSFET 2P-CH 20V 1.2A 6DSBGA

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)

pacote: 6-UFBGA, DSBGA

Estoque7.072

Logic Level Gate

20V

1.2A

100 mOhm @ 1A, 4.5V

1V @ 250µA

2.1nC @ 4.5V

195pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA, DSBGA

6-DSBGA (1x1.5)

IXTL2X240N055T

IXYS

MOSFET 2N-CH 55V 140A ISOPLUS I5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 140A
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 150W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

pacote: ISOPLUSi5-Pak?

Estoque6.208

Standard

55V

140A

4.4 mOhm @ 50A, 10V

4V @ 250µA

170nC @ 10V

7600pF @ 25V

150W

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUSi5-Pak?

ZXMC3AM832TA

Diodes Incorporated

MOSFET N/P-CH 30V 2.9A/2.1A 8MLP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 1.7W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

pacote: 8-VDFN Exposed Pad

Estoque480.600

Logic Level Gate

30V

2.9A, 2.1A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.9nC @ 10V

190pF @ 25V

1.7W

-

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

IPG20N06S4L26AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Power - Max: 33W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

pacote: 8-PowerVDFN

Estoque6.288

Logic Level Gate

60V

20A

26 mOhm @ 17A, 10V

2.2V @ 10µA

20nC @ 10V

1430pF @ 25V

33W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

GWM100-0085X1-SMD

IXYS

MOSFET 6N-CH 85V 103A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 103A
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

pacote: 17-SMD, Gull Wing

Estoque7.056

Standard

85V

103A

6.2 mOhm @ 75A, 10V

4V @ 250µA

114nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

FMP76-010T

IXYS

MOSFET N/P-CH 100V 62A/54A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 62A, 54A
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Power - Max: 89W, 132W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

pacote: i4-Pac?-5

Estoque3.520

Standard

100V

62A, 54A

11 mOhm @ 25A, 10V

4.5V @ 250µA

104nC @ 10V

5080pF @ 25V

89W, 132W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

QS8K51TR

Rohm Semiconductor

MOSFET 2N-CH 30V 2A TSMT8

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacote: 8-SMD, Flat Lead

Estoque2.368

-

30V

2A

-

Surface Mount

8-SMD, Flat Lead

TSMT8

AO4821

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque7.792

Logic Level Gate

12V

9A

19 mOhm @ 9A, 4.5V

850mV @ 250µA

23nC @ 4.5V

2100pF @ 6V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLUD3A260PZTBG

ON Semiconductor

MOSFET 2P-CH 20V 1.3A UDFN6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

pacote: 6-UFDFN Exposed Pad

Estoque3.520

Logic Level Gate

20V

1.3A

200 mOhm @ 2A, 4.5V

1V @ 250µA

4.2nC @ 4.5V

300pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

DMN63D1LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.25A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

Estoque4.480

Standard

60V

250mA

2 Ohm @ 500mA, 10V

2.5V @ 1mA

0.3nC @ 4.5V

30pF @ 25V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BUK7K25-40E,115

Nexperia USA Inc.

MOSFET 2N-CH 40V 27A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacote: SOT-1205, 8-LFPAK56

Estoque6.016

Standard

40V

27A

25 mOhm @ 5A, 10V

4V @ 1mA

7.9nC @ 10V

525pF @ 25V

32W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

NDS9945

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque270.228

Logic Level Gate

60V

3.5A

100 mOhm @ 3.5A, 10V

3V @ 250µA

30nC @ 10V

345pF @ 25V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTUD3174NZT5G

ON Semiconductor

MOSFET ARRAY 2NCH 20V SOT963

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Power - Max: 125mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacote: SOT-963

Estoque28.800

Standard

20V

220mA (Ta)

1.5 Ohm @ 100mA, 4.5V

1V @ 100µA

-

12.5pF @ 15V

125mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

FDC6401N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3A SSOT-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

pacote: SOT-23-6 Thin, TSOT-23-6

Estoque88.368

Logic Level Gate

20V

3A

70 mOhm @ 3A, 4.5V

1.5V @ 250µA

4.6nC @ 4.5V

324pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

DMN3190LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacote: 6-TSSOP, SC-88, SOT-363

Estoque386.094

Logic Level Gate

30V

1A

190 mOhm @ 1.3A, 10V

2.8V @ 250µA

2nC @ 10V

87pF @ 20V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

AO4818BL

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacote: -

Request a Quote

-

30V

8A (Ta)

19mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN3732UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

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30V

1.1A (Ta)

460mOhm @ 200mA, 4.5V

0.95V @ 250µA

0.9nC @ 10V

40.8pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

CMLDM7002AG-TR-PBFREE

Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacote: -

Estoque5.526

-

60V

280mA

2Ohm @ 500mA, 10V

2.5V @ 250µA

0.59nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

AO4614BL

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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40V

6A (Ta), 5A (Ta)

30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V

3V @ 250µA

10.8nC @ 10V, 22nC @ 10V

650pF @ 20V, 1175pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NXH010P120MNF1PTNG

onsemi

SIC 2N-CH 1200V 114A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Power - Max: 250W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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1200V (1.2kV)

114A (Tc)

14mOhm @ 100A, 20V

4.3V @ 40mA

454nC @ 20V

4707pF @ 800V

250W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

DMN11M2UCA14-7

Diodes Incorporated

MOSFET 2N-CH 12V 34A X2-TSN3027

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 870µA
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 6083pF @ 6V
Power - Max: 950mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Supplier Device Package: X2-TSN3027-14

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12V

34A (Ta)

1.85mOhm @ 9.8A, 4.5V

1.4V @ 870µA

71nC @ 4V

6083pF @ 6V

950mW

-55°C ~ 150°C (TJ)

Surface Mount

14-SMD, No Lead

X2-TSN3027-14

DMNH6021SPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 8.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

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60V

8.2A (Ta), 32A(Tc)

25mOhm @ 15A, 10V

3V @ 250µA

20.1nC @ 10V

1143pF @ 25V

1.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

NVMFD5C680NLT1G

onsemi

MOSFET 2N-CH 60V 7.5A/26A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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60V

7.5A (Ta), 26A (Tc)

28mOhm @ 5A, 10V

2.2V @ 13µA

2nC @ 4.5V

350pF @ 25V

3W (Ta), 19W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

AO4616L_103

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8.1A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V, 30.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1573pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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30V

8.1A (Ta), 7.1A (Ta)

20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V

3V @ 250µA, 2.7V @ 250µA

19.2nC @ 10V, 30.9nC @ 10V

1250pF @ 15V, 1573pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TSM300NB06DCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/25A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
Power - Max: 2W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

pacote: -

Estoque10.734

-

60V

6A (Ta), 25A (Tc)

30mOhm @ 6A, 10V

4.5V @ 250µA

17nC @ 10V

1079pF @ 30V

2W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

NDS8926

onsemi

MOSFET 2N-CH 20V 5.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Power - Max: 900mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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Logic Level Gate

20V

5.5A

35mOhm @ 5.5A, 4.5V

1V @ 250µA

30nC @ 4.5V

760pF @ 10V

900mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN63D1LVQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 477mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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60V

477mA (Ta)

2Ohm @ 500mA, 10V

2.5V @ 1mA

1.04nC @ 10V

41pF @ 30V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563