Página 145 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7342Q	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque3.680	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	3V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AUIRF7319Q	Infineon Technologies	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	pacote: 8-SOIC	Estoque260.448	Logic Level Gate	30V	6.5A, 4.9A	29 mOhm @ 5.8A, 10V	3V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
SI6983DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.6A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacote: 8-TSSOP (0.173", 4.40mm Width)	Estoque2.112	Logic Level Gate	20V	4.6A	24 mOhm @ 5.4A, 4.5V	1V @ 400µA	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1970DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacote: 6-TSSOP, SC-88, SOT-363	Estoque7.920	Logic Level Gate	30V	1.3A	225 mOhm @ 1.2A, 4.5V	1.6V @ 250µA	3.8nC @ 10V	95pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NDC7002N_SB9G007	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 0.51A 6-SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 510mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	pacote: SOT-23-6 Thin, TSOT-23-6	Estoque6.160	Logic Level Gate	50V	510mA	2 Ohm @ 510mA, 10V	2.5V @ 250µA	1nC @ 10V	20pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDR8308P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.2A SSOT-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: SuperSOT?-8	pacote: 8-SMD, Gull Wing	Estoque7.760	Logic Level Gate	20V	3.2A	50 mOhm @ 3.2A, 4.5V	1.5V @ 250µA	19nC @ 4.5V	1240pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Gull Wing	SuperSOT?-8
ALD1101APAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	pacote: 8-DIP (0.300", 7.62mm)	Estoque2.000	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SP8J66TB1	Rohm Semiconductor	MOSFET 2P-CH 30V 9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque2.576	Standard	30V	9A	-	-	-	-	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC2990UDJQ-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT963 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacote: SOT-963	Estoque3.792	Standard	20V	450mA (Ta), 310mA (Ta)	990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V	1V @ 250µA	0.5nC @ 4.5V, 0.4nC @ 4.5V	27.6pF @ 15V, 28.7pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
TSM8568CS RLG	TSC America Inc.	MOSFET, COMPLEMENTARY, N-CHANNEL FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque7.120	Standard	30V	15A (Tc), 13A (Tc)	16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V	2.5V @ 250µA	7nC @ 4.5V, 11nC @ 4.5V	646pF @ 15V, 1089pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CSD87333Q3DT	Texas Instruments	MOSFET 2N-CH 30V 15A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V Power - Max: 6W Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	pacote: 8-PowerTDFN	Estoque7.728	Logic Level Gate, 5V Drive	30V	15A	14.3 mOhm @ 4A, 8V	1.2V @ 250µA	4.6nC @ 4.5V	662pF @ 15V	6W	125°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
SH8J66TB1	Rohm Semiconductor	MOSFET 2P-CH 30V 9A SOP8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque30.756	Logic Level Gate	30V	9A	18.5 mOhm @ 9A, 10V	2.5V @ 1mA	35nC @ 5V	3000pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PMDPB58UPE,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 3.6A HUSON6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	pacote: 6-UDFN Exposed Pad	Estoque2.656	Logic Level Gate	20V	3.6A	67 mOhm @ 2A, 4.5V	950mV @ 250µA	9.5nC @ 4.5V	804pF @ 10V	515mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
FDMQ8403	Fairchild/ON Semiconductor	MOSFET 4N-CH 100V 3.1A 12-MLP FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	pacote: 12-WDFN Exposed Pad	Estoque7.088	Standard	100V	3.1A	110 mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	215pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
US6J11TR	Rohm Semiconductor	MOSFET 2P-CH 12V 1.3A TUMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V Power - Max: 320mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacote: 6-TSSOP, SC-88, SOT-363	Estoque36.000	Logic Level Gate	12V	1.3A	260 mOhm @ 1.3A, 4.5V	1V @ 1mA	2.4nC @ 4.5V	290pF @ 6V	320mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
DMN6066SSD-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.3A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque396.000	Logic Level Gate	60V	3.3A	66 mOhm @ 4.5A, 10V	3V @ 250µA	10.3nC @ 10V	502pF @ 30V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FQS4901TF	Fairchild/ON Semiconductor	MOSFET 2N-CH 400V 0.45A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 450mA Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 225mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque184.092	Standard	400V	450mA	4.2 Ohm @ 225mA, 10V	4V @ 250µA	7.5nC @ 10V	210pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDG8850NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 0.75A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacote: 6-TSSOP, SC-88, SOT-363	Estoque193.464	Logic Level Gate	30V	750mA	400 mOhm @ 750mA, 4.5V	1.5V @ 250µA	1.44nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMN33D8LVQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacote: -	Estoque8.790	Logic Level Gate	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HUF75842S3	Fairchild Semiconductor	MOSFET N-CH 150V 43A D2PAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SI1902CDL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 1A/1.1A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW (Ta), 420mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacote: -	Request a Quote	-	20V	1A (Ta), 1.1A (Tc)	235mOhm @ 1A, 4.5V	1.5V @ 250µA	3nC @ 10V	62pF @ 10V	300mW (Ta), 420mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
VN0606M	Siliconix	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK9K30-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 17A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacote: -	Estoque2.835	Logic Level Gate	80V	17A (Ta)	26mOhm @ 5A, 10V	2.1V @ 1mA	17.5nC @ 5V	2297pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SSFK2219	Good-Ark Semiconductor	MOSFET 2P-CH 20V 0.54A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 278mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: -	Estoque17.208	-	20V	540mA (Ta)	600mOhm @ 300mA, 4.5V	1V @ 250µA	2nC @ 4.5V	78pF @ 10V	278mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PJX8603_R1_00001	Panjit International Inc.	MOSFET N/P-CH 50V/60V SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V, 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacote: -	Estoque20.640	-	50V, 60V	360mA (Ta), 200mA (Ta)	1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V	1V @ 250µA, 2.5V @ 250µA	0.95nC @ 4.5V, 1.1nC @ 4.5V	36pF @ 25V, 51pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMTH45M5LPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Power - Max: 3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	pacote: -	Estoque7.440	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	2.3V @ 250µA	13.9nC @ 10V	978pF @ 20V	3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
MCH6626-TL-H	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2900UDW-13	Diodes Incorporated	MOSFET 2P-CH 20V 0.63A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: -	Request a Quote	-	20V	630mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

AUIRF7342Q

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque3.680

Logic Level Gate

55V

3.4A

105 mOhm @ 3.4A, 10V

3V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AUIRF7319Q

Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

pacote: 8-SOIC

Estoque260.448

Logic Level Gate

30V

6.5A, 4.9A

29 mOhm @ 5.8A, 10V

3V @ 250µA

33nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

SI6983DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.6A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacote: 8-TSSOP (0.173", 4.40mm Width)

Estoque2.112

Logic Level Gate

20V

4.6A

24 mOhm @ 5.4A, 4.5V

1V @ 400µA

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI1970DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacote: 6-TSSOP, SC-88, SOT-363

Estoque7.920

Logic Level Gate

30V

1.3A

225 mOhm @ 1.2A, 4.5V

1.6V @ 250µA

3.8nC @ 10V

95pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NDC7002N_SB9G007

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 0.51A 6-SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

pacote: SOT-23-6 Thin, TSOT-23-6

Estoque6.160

Logic Level Gate

50V

510mA

2 Ohm @ 510mA, 10V

2.5V @ 250µA

1nC @ 10V

20pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDR8308P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.2A SSOT-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: SuperSOT?-8

pacote: 8-SMD, Gull Wing

Estoque7.760

Logic Level Gate

20V

3.2A

50 mOhm @ 3.2A, 4.5V

1.5V @ 250µA

19nC @ 4.5V

1240pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Gull Wing

SuperSOT?-8

ALD1101APAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

pacote: 8-DIP (0.300", 7.62mm)

Estoque2.000

Standard

10.6V

-

75 Ohm @ 5V

1V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SP8J66TB1

Rohm Semiconductor

MOSFET 2P-CH 30V 9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque2.576

Standard

30V

9A

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC2990UDJQ-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT963

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta)
Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacote: SOT-963

Estoque3.792

Standard

20V

450mA (Ta), 310mA (Ta)

990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V

1V @ 250µA

0.5nC @ 4.5V, 0.4nC @ 4.5V

27.6pF @ 15V, 28.7pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

TSM8568CS RLG

TSC America Inc.

MOSFET, COMPLEMENTARY, N-CHANNEL

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque7.120

Standard

30V

15A (Tc), 13A (Tc)

16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V

2.5V @ 250µA

7nC @ 4.5V, 11nC @ 4.5V

646pF @ 15V, 1089pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CSD87333Q3DT

Texas Instruments

MOSFET 2N-CH 30V 15A 8SON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Power - Max: 6W
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

pacote: 8-PowerTDFN

Estoque7.728

Logic Level Gate, 5V Drive

30V

15A

14.3 mOhm @ 4A, 8V

1.2V @ 250µA

4.6nC @ 4.5V

662pF @ 15V

6W

125°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

SH8J66TB1

Rohm Semiconductor

MOSFET 2P-CH 30V 9A SOP8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque30.756

Logic Level Gate

30V

9A

18.5 mOhm @ 9A, 10V

2.5V @ 1mA

35nC @ 5V

3000pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PMDPB58UPE,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 3.6A HUSON6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Power - Max: 515mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

pacote: 6-UDFN Exposed Pad

Estoque2.656

Logic Level Gate

20V

3.6A

67 mOhm @ 2A, 4.5V

950mV @ 250µA

9.5nC @ 4.5V

804pF @ 10V

515mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

FDMQ8403

Fairchild/ON Semiconductor

MOSFET 4N-CH 100V 3.1A 12-MLP

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)

pacote: 12-WDFN Exposed Pad

Estoque7.088

Standard

100V

3.1A

110 mOhm @ 3A, 10V

4V @ 250µA

5nC @ 10V

215pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

12-WDFN Exposed Pad

12-MLP (5x4.5)

US6J11TR

Rohm Semiconductor

MOSFET 2P-CH 12V 1.3A TUMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Power - Max: 320mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacote: 6-TSSOP, SC-88, SOT-363

Estoque36.000

Logic Level Gate

12V

1.3A

260 mOhm @ 1.3A, 4.5V

1V @ 1mA

2.4nC @ 4.5V

290pF @ 6V

320mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

DMN6066SSD-13

Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque396.000

Logic Level Gate

60V

3.3A

66 mOhm @ 4.5A, 10V

3V @ 250µA

10.3nC @ 10V

502pF @ 30V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FQS4901TF

Fairchild/ON Semiconductor

MOSFET 2N-CH 400V 0.45A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 450mA
Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 225mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque184.092

Standard

400V

450mA

4.2 Ohm @ 225mA, 10V

4V @ 250µA

7.5nC @ 10V

210pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDG8850NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 0.75A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacote: 6-TSSOP, SC-88, SOT-363

Estoque193.464

Logic Level Gate

30V

750mA

400 mOhm @ 750mA, 4.5V

1.5V @ 250µA

1.44nC @ 4.5V

120pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMN33D8LVQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacote: -

Estoque8.790

Logic Level Gate

30V

350mA (Ta)

2.4Ohm @ 250mA, 10V

1.5V @ 100µA

1.23nC @ 10V

48pF @ 5V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

HUF75842S3

Fairchild Semiconductor

MOSFET N-CH 150V 43A D2PAK

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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-

SI1902CDL-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 20V 1A/1.1A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 300mW (Ta), 420mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacote: -

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-

20V

1A (Ta), 1.1A (Tc)

235mOhm @ 1A, 4.5V

1.5V @ 250µA

3nC @ 10V

62pF @ 10V

300mW (Ta), 420mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

VN0606M

Siliconix

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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-

BUK9K30-80EX

Nexperia USA Inc.

MOSFET 2N-CH 80V 17A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacote: -

Estoque2.835

Logic Level Gate

80V

17A (Ta)

26mOhm @ 5A, 10V

2.1V @ 1mA

17.5nC @ 5V

2297pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SSFK2219

Good-Ark Semiconductor

MOSFET 2P-CH 20V 0.54A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Power - Max: 278mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacote: -

Estoque17.208

-

20V

540mA (Ta)

600mOhm @ 300mA, 4.5V

1V @ 250µA

2nC @ 4.5V

78pF @ 10V

278mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PJX8603_R1_00001

Panjit International Inc.

MOSFET N/P-CH 50V/60V SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacote: -

Estoque20.640

-

50V, 60V

360mA (Ta), 200mA (Ta)

1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V

1V @ 250µA, 2.5V @ 250µA

0.95nC @ 4.5V, 1.1nC @ 4.5V

36pF @ 25V, 51pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMTH45M5LPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Power - Max: 3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

pacote: -

Estoque7.440

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

2.3V @ 250µA

13.9nC @ 10V

978pF @ 20V

3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

MCH6626-TL-H

onsemi

PCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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-

DMP2900UDW-13

Diodes Incorporated

MOSFET 2P-CH 20V 0.63A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacote: -

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-

20V

630mA (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.7nC @ 4.5V

49pF @ 16V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363