Página 103 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559-836
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Transistores - FET, MOSFET - Arranjos

Registros 5.684
Página  103/203
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSL806NL6327HTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.3A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
  • Vgs(th) (Max) @ Id: 750mV @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacote: SOT-23-6 Thin, TSOT-23-6
Estoque7.568
Logic Level Gate
20V
2.3A
57 mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7nC @ 2.5V
259pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
MP6M11TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A MPT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: MPT6
pacote: 6-SMD, Flat Leads
Estoque5.872
Logic Level Gate
30V
3.5A
98 mOhm @ 3.5A, 10V
2.5V @ 1mA
1.9nC @ 5V
85pF @ 10V
2W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
MPT6
hot FDS8962C
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque341.676
Logic Level Gate
30V
7A, 5A
30 mOhm @ 7A, 10V
3V @ 250µA
26nC @ 10V
575pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MMDF2C03HDR2G
ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.976
Logic Level Gate
30V
4.1A, 3A
70 mOhm @ 3A, 10V
3V @ 250µA
16nC @ 10V
630pF @ 24V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ZXMD63C03XTC
Diodes Incorporated

MOSFET N/P-CH 30V 8MSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Estoque4.720
Logic Level Gate
30V
-
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
APTM20HM08FG
Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacote: SP6
Estoque5.248
Standard
200V
208A
10 mOhm @ 104A, 10V
5V @ 5mA
280nC @ 10V
14400pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20AM10STG
Microsemi Corporation

MOSFET 2N-CH 200V 175A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacote: SP4
Estoque4.224
Standard
200V
175A
12 mOhm @ 87.5A, 10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTC80TA15PG
Microsemi Corporation

MOSFET 6N-CH 800V 28A SP6P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Power - Max: 277W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
pacote: SP6
Estoque5.776
Standard
800V
28A
150 mOhm @ 14A, 10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
277W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
SI4834CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.784
Standard
30V
8A
20 mOhm @ 8A, 10V
3V @ 1mA
25nC @ 10V
950pF @ 15V
2.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1553CDL-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
  • Power - Max: 340mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacote: 6-TSSOP, SC-88, SOT-363
Estoque855.912
Logic Level Gate
20V
700mA, 500mA
390 mOhm @ 700mA, 4.5V
1.5V @ 250µA
1.8nC @ 10V
38pF @ 10V
340mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
SSFQ6810
Good-Ark Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Power - Max: 2.1W (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
Estoque17.922
-
60V
5A (Tc)
54mOhm @ 5A, 10V
2.5V @ 250µA
21nC @ 10V
1300pF @ 25V
2.1W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NTTFD2D8N03P1E
onsemi

MOSFET 2N-CH 30V 16.1A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V
  • Power - Max: 1.04W (Ta), 26W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
pacote: -
Request a Quote
-
30V
16.1A (Ta), 80A (Tc)
2.5mOhm @ 18A, 10V
3V @ 400µA
20.8nC @ 10V, 20.5nC @ 10V
1500pF @ 15V, 1521pF @ 15V
1.04W (Ta), 26W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
BUK9K20-80EX
Nexperia USA Inc.

MOSFET 2N-CH 80V 23A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3462pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacote: -
Estoque4.650
Logic Level Gate
80V
23A (Ta)
17mOhm @ 10A, 10V
2.1V @ 1mA
25.5nC @ 5V
3462pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
DMC3060LVTQ-7
Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
  • Power - Max: 830mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacote: -
Request a Quote
-
30V
3.6A (Ta), 2.8A (Ta)
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
1.8V @ 250µA, 2.1V @ 250µA
11.3nC @ 10V, 8.6nC @ 10V
395pF @ 15V, 324pF @ 15V
830mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMT3009LEV-7
Diodes Incorporated

MOSFET 25V-30V POWERDI3333-8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SSM10N961L-ELF
Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 880mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFLGA, CSP
  • Supplier Device Package: TCSPAG-341501
pacote: -
Estoque28.470
-
30V
9A (Ta)
-
2.3V @ 250µA
17.3nC @ 10V
-
880mW (Ta)
150°C
Surface Mount
10-XFLGA, CSP
TCSPAG-341501
SI4500BDY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: -
Request a Quote
Logic Level Gate
20V
6.6A, 3.8A
20mOhm @ 9.1A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
-
1.3W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDMC9430L-F085
onsemi

MOSFET 2N-CH 40V 12A 8WDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 20V
  • Power - Max: 11.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WDFN (3x3)
pacote: -
Estoque14.037
-
40V
12A
8mOhm @ 12A, 10V
3V @ 250µA
22nC @ 10V
984pF @ 20V
11.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WDFN (3x3)
SP8K3FRATB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
Estoque3.153
-
30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMTH6016LPDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: 2.5W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
pacote: -
Estoque231
-
60V
9.2A (Ta), 33.2A (Tc)
19mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
2.5W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
NVMFD5C470NT1G
onsemi

MOSFET 2N-CH 40V 11.7A/36A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Power - Max: 3.1W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacote: -
Request a Quote
-
40V
11.7A (Ta), 36A (Tc)
11.7mOhm @ 10A, 10V
3.5V @ 250µA
8nC @ 10V
420pF @ 25V
3.1W (Ta), 28W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
FX205-TL-E
Sanyo

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMNH6035SPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
  • Power - Max: 2.4W (Ta), 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
pacote: -
Estoque7.500
-
60V
33A (Tc)
35mOhm @ 15A, 10V
3V @ 250µA
16nC @ 10V
879pF @ 25V
2.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
SI7252ADP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 9.3A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
  • Power - Max: 3.6W (Ta), 33.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
pacote: -
Estoque35.154
-
100V
9.3A (Ta), 28.7A (Tc)
18.6mOhm @ 10A, 10V
4V @ 250µA
26.5nC @ 10V
1266pF @ 50V
3.6W (Ta), 33.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
TSM300NB06LDCR
Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 5A/24A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
  • Power - Max: 2W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
pacote: -
Request a Quote
Logic Level Gate
60V
5A (Ta), 24A (Tc)
30mOhm @ 5A, 10V
2.5V @ 250µA
17nC @ 10V
966pF @ 30V
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFNU (5x6)
SQJ912BEP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
pacote: -
Estoque13.311
-
40V
30A (Tc)
11mOhm @ 9A, 10V
2V @ 250µA
60nC @ 10V
3000pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMTH4007SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 48A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (SWP)
pacote: -
Request a Quote
-
40V
12.5A (Ta), 48A (Tc)
8.6mOhm @ 17A, 10V
4V @ 250µA
41.9nC @ 10V
2026pF @ 30V
2.6W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (SWP)
XP3700MT
YAGEO XSEMI

MOSFET N AND P-CH 30V 11A 7.3A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V
  • Power - Max: 3.57W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PMPAK® 5 x 6
pacote: -
Estoque3.000
-
30V
11A (Ta), 7.3A(Ta)
18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
2V @ 250µA
8.3nC @ 4.5V, 9.6nC @ 4.5V
900pF @ 15V, 960pF @ 15V
3.57W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PMPAK® 5 x 6