Página 702 - Transistores - Bipolares (BJT) - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - Simples

Registros 20.307
Página  702/726
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1721RTE85LF
Toshiba Semiconductor and Storage

TRANS PNP 300V 100MA TO236-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: TO-236-3, SC-59, SOT-23-3
Estoque4.464
100mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
30 @ 20mA, 10V
150mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
hot 2SA1162S-GR,LF(D
Toshiba Semiconductor and Storage

TRANSISTOR PNP 50V 150MA S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: TO-236-3, SC-59, SOT-23-3
Estoque36.000
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
FZT600BTC
Diodes Incorporated

TRANS NPN DARL 140V 2A SOT223

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: TO-261-4, TO-261AA
Estoque3.344
2A
140V
1.2V @ 10mA, 1A
10µA
10000 @ 500mA, 10V
2W
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SD22250RA
Panasonic Electronic Components

TRANS NPN 120V 0.5A MT-2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-2-A1
pacote: 3-SIP
Estoque5.376
500mA
120V
1V @ 30mA, 300mA
-
130 @ 150mA, 10V
1W
200MHz
150°C (TJ)
Through Hole
3-SIP
MT-2-A1
TIP112 TIN/LEAD
Central Semiconductor Corp

TRANS NPN 100V TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: -
  • Frequency - Transition: 25MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: TO-220-3
Estoque6.320
-
100V
2.5V @ 8mA, 2A
-
1000 @ 1A, 4V
-
25MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
ZTX694BSTZ
Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacote: E-Line-3, Formed Leads
Estoque6.384
500mA
120V
500mV @ 5mA, 400mA
100nA (ICBO)
400 @ 200mA, 2V
1W
130MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot NSS35200CF8T1G
ON Semiconductor

TRANS PNP 35V 2A 8CHIPFET

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
  • Power - Max: 635mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
pacote: 8-SMD, Flat Lead
Estoque1.295.508
2A
35V
300mV @ 20mA, 2A
100nA
100 @ 1.5A, 2V
635mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
NSV2029M3T5G
ON Semiconductor

TRANS PNP 50V 0.15A SOT723

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500pA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 265mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
pacote: SOT-723
Estoque6.960
150mA
50V
500mV @ 5mA, 50mA
500pA (ICBO)
120 @ 1mA, 6V
265mW
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
hot TIP126TU
Fairchild/ON Semiconductor

TRANS PNP DARL 80V 5A TO-220

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacote: TO-220-3
Estoque9.348
5A
80V
4V @ 20mA, 5A
2mA
1000 @ 3A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BCP52-10,135
Nexperia USA Inc.

TRANS PNP 60V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1.3W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: TO-261-4, TO-261AA
Estoque5.488
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1.3W
145MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot NZT753
Fairchild/ON Semiconductor

TRANS PNP 100V 4A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
pacote: TO-261-4, TO-261AA
Estoque553.968
4A
100V
300mV @ 50mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
1.2W
75MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-4
hot MJD44H11TF
Fairchild/ON Semiconductor

TRANS NPN 80V 8A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 1.75W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque28.320
8A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
1.75W
50MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-3
hot FMMT717TA
Diodes Incorporated

TRANS PNP 12V 2.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque798.108
2.5A
12V
220mV @ 50mA, 2.5A
100nA
300 @ 100mA, 2V
625mW
110MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2SC4382
Sanken

TRANS NPN 200V 2A TO220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V
  • Power - Max: 25W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
pacote: TO-220-3 Full Pack
Estoque45.072
2A
200V
1V @ 70mA, 700mA
10µA (ICBO)
60 @ 700mA, 10V
25W
15MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
BF820-QVL
Nexperia USA Inc.

BF820-Q/SOT23/TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
  • Power - Max: 250 mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacote: -
Request a Quote
50 mA
300 V
600mV @ 5mA, 30mA
10nA (ICBO)
50 @ 25mA, 20V
250 mW
60MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
2SB1151-O-BP
Micro Commercial Co

TRANS PNP 60V 5A TO126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1.25 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
pacote: -
Request a Quote
5 A
60 V
300mV @ 200mA, 2A
10µA (ICBO)
100 @ 2A, 1V
1.25 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
CEN867-TR-TIN-LEAD
Central Semiconductor Corp

TRANSISTOR NPN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC4942-T1-AZ
Renesas Electronics Corporation

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
STL128DN
STMicroelectronics

TRANS NPN 400V 4A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Power - Max: 60 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: -
Request a Quote
4 A
400 V
1V @ 400mA, 2A
250µA
10 @ 10mA, 5V
60 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
D44VM10
Harris Corporation

TRANS NPN 80V 8A TO220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 50 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: -
Request a Quote
8 A
80 V
600mV @ 300mA, 6A
10µA
40 @ 4A, 1V
50 W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
PMD10K80
Solid State Inc.

TRANS NPN DARL 80V 12A TO3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacote: -
Request a Quote
12 A
80 V
-
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
BC847CQCZ
Nexperia USA Inc.

TRANS 45V 0.1A DFN1412D-3

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 360 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3
pacote: -
Request a Quote
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
360 mW
100MHz
150°C (TJ)
Surface Mount, Wettable Flank
3-XDFN Exposed Pad
DFN1412D-3
2N2727
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
pacote: -
Request a Quote
500 mA
150 V
-
-
-
1 W
-
-
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2SA2071P5T100
Rohm Semiconductor

PNP HIGH SPEED SWITCHING TRANSIS

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
pacote: -
Request a Quote
3 A
60 V
500mV @ 1mA, 10mA
1µA (ICBO)
180 @ 2mA, 6V
500 mW
-
150°C (TJ)
Surface Mount
TO-243AA
MPT3
2N5621
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 116 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
pacote: -
Request a Quote
10 A
60 V
-
-
-
116 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2SC2983-Y-TP
Micro Commercial Co

TRANS NPN 160V 1.5A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
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1.5 A
160 V
1.5V @ 50mA, 500mA
1µA (ICBO)
70 @ 100mA, 5V
1 W
100MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
2C6338
Microchip Technology

TRANSISTOR POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
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-
-
-
-
-
-
-
-
-
-
-
JANTX2N2604UB-TR
Microchip Technology

TRANS PNP 60V 0.03A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacote: -
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30 mA
60 V
300mV @ 500µA, 10mA
10nA
60 @ 500µA, 5V
400 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB