Página 52 - Transistores - Bipolares (BJT) - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - Simples

Registros 20.307
Página  52/677
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC846BW/ZLF
Nexperia USA Inc.

TRANS NPN 65V 0.1A SOT323

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88-6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque7.184
-
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88-6
TRD236DT4
STMicroelectronics

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 600mA, 2.5A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2.5A, 5V
  • Power - Max: 35W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.160
4A
400V
1.3V @ 600mA, 2.5A
250µA
8 @ 2.5A, 5V
35W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot BD242B
ON Semiconductor

TRANS PNP 80V 3A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque99.600
3A
80V
1.2V @ 600mA, 3A
300µA
25 @ 1A, 4V
40W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
KSC2784PBU
Fairchild/ON Semiconductor

TRANS NPN 120V 0.05A TO-92S

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
pacote: TO-226-3, TO-92-3 Short Body
Estoque3.824
50mA
120V
300mV @ 1mA, 10mA
50nA (ICBO)
200 @ 1mA, 6V
300mW
110MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
KSC1187OBU
Fairchild/ON Semiconductor

TRANS NPN 20V 0.03A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 700MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque5.232
30mA
20V
-
100nA (ICBO)
70 @ 2mA, 10V
250mW
700MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
ZTX694BSTOA
Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacote: E-Line-3, Formed Leads
Estoque2.672
500mA
120V
500mV @ 5mA, 400mA
100nA (ICBO)
400 @ 200mA, 2V
1W
130MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
SPZTA42T1G
ON Semiconductor

TRANS NPN 300V 0.5A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3
pacote: TO-261-4, TO-261AA
Estoque7.376
500mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.5W
50MHz
-
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
NSVMMBT4401WT1G
ON Semiconductor

TRANS NPN 40V BIPOLAR SC70-3

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque6.000
-
-
-
-
-
-
-
-
-
-
-
BCW66GR
Nexperia USA Inc.

BCW66GSOT23TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacote: TO-236-3, SC-59, SOT-23-3
Estoque6.928
800mA
45V
450mV @ 50mA, 500mA
5µA (ICBO)
160 @ 100mA, 1V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
2PD601ASL,235
Nexperia USA Inc.

TRANS NPN 50V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque4.880
100mA
50V
250mV @ 10mA, 100mA
10nA (ICBO)
290 @ 2mA, 10V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PBHV9515QAZ
Nexperia USA Inc.

TRANS PNP 150V 0.5A DFN1010D-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
  • Power - Max: 325mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
pacote: 3-XDFN Exposed Pad
Estoque2.288
500mA
150V
100mV @ 5mA, 50mA
100nA
100 @ 200mA, 10V
325mW
75MHz
150°C (TJ)
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
BCW61B,215
Nexperia USA Inc.

TRANS PNP 32V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque3.808
100mA
32V
550mV @ 1.25mA, 50mA
20nA (ICBO)
180 @ 2mA, 5V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot BUL58D
STMicroelectronics

TRANS NPN 450V 8A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
  • Power - Max: 85W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: TO-220-3
Estoque18.228
8A
450V
2V @ 1A, 5A
200µA
5 @ 5A, 5V
85W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
hot 2SC5866TLR
Rohm Semiconductor

TRANS NPN 60V 2A TSMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
pacote: SC-96
Estoque328.800
2A
60V
500mV @ 100mA, 1A
1µA (ICBO)
120 @ 100mA, 2V
500mW
200MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
2SC3325-Y,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: TO-236-3, SC-59, SOT-23-3
Estoque197.706
500mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 100mA, 1V
200mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
NTE2525
NTE Electronics, Inc

TRANS PNP 50V 8A TO251

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TO-251
pacote: -
Request a Quote
8 A
50 V
500mV @ 200mA, 4A
1µA (ICBO)
100 @ 500mA, 2V
1 W
130MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TO-251
NTE253MCP
NTE Electronics, Inc

TRANS NPN DARL 80V 4A TO126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
  • Power - Max: 40 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
pacote: -
Request a Quote
4 A
80 V
3V @ 40mA, 4A
100µA
750 @ 1.5A, 3V
40 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANSP2N5152
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacote: -
Request a Quote
2 A
80 V
1.5V @ 500mA, 5A
50µA
30 @ 2.5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
2SC5069-TD-E
onsemi

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BCX54E6327
Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SB1429_R1_00001
Panjit International Inc.

TRANS PNP 20V 3A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: -
Estoque8.667
3 A
20 V
300mV @ 300mA, 3A
100nA (ICBO)
200 @ 500mA, 2V
1.25 W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC807-16LWX
Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacote: -
Estoque9.000
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NTE184MP
NTE Electronics, Inc

TRANS NPN 80V 4A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
  • Power - Max: 40 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
pacote: -
Request a Quote
4 A
80 V
1.4V @ 1A, 4A
1mA
20 @ 1.5A, 2V
40 W
2MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
JANS2N7371
Microchip Technology

POWER BJT

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
  • Power - Max: 100 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254AA
pacote: -
Request a Quote
12 A
100 V
3V @ 120mA, 12A
1mA
1000 @ 6A, 3V
100 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-254-3, TO-254AA
TO-254AA
BSR43-QX
Nexperia USA Inc.

BSR43-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.35 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacote: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 5V
1.35 W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BC858CLT3
onsemi

TRANS PNP 30V 0.1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
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100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2N6467
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 40 W
  • Frequency - Transition: 5MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66
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4 A
100 V
-
-
-
40 W
5MHz
-
Through Hole
TO-213AA, TO-66-2
TO-66
TIP32A-PBFREE
Central Semiconductor Corp

TRANS PNP 60V 3A TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
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3 A
60 V
1.2V @ 375mA, 3A
300µA
25 @ 1A, 4V
40 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SC2411-P-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
  • Power - Max: 200 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
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500 mA
32 V
400mV @ 50mA, 500mA
1µA (ICBO)
82 @ 100mA, 3V
200 mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
8550SS-C-AP
Micro Commercial Co

TRANS PNP 25V 1.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
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1.5 A
25 V
500mV @ 80mA, 800mA
100nA
120 @ 100mA, 1V
1 W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92