Página 41 - Transistores - Bipolares (BJT) - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - Simples

Registros 20.307
Página  41/726
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JAN2N5683
Microsemi Corporation

TRANS NPN 60V 50A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
pacote: TO-204AA, TO-3
Estoque7.760
50A
60V
5V @ 10A, 50A
5µA
15 @ 25A, 2V
300W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3 (TO-204AA)
JAN2N4399
Microsemi Corporation

TRANS PNP 60V 30A TO-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
pacote: TO-204AA, TO-3
Estoque6.192
30A
60V
750mV @ 1A, 10A
100µA
15 @ 15A, 2V
5W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3 (TO-204AA)
BDX53B-S
Bourns Inc.

TRANS NPN DARL 80V 8A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: TO-220-3
Estoque3.088
8A
80V
2V @ 12mA, 3A
500µA
750 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
ZTX705STOB
Diodes Incorporated

TRANS PNP DARL 120V 1A E-LINE

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
  • Power - Max: 1W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacote: E-Line-3, Formed Leads
Estoque2.368
1A
120V
2.5V @ 2mA, 2A
10µA
3000 @ 1A, 5V
1W
160MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
ZTX560STOB
Diodes Incorporated

TRANS PNP 500V 0.15A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
pacote: E-Line-3, Formed Leads
Estoque2.240
150mA
500V
500mV @ 10mA, 50mA
100nA
80 @ 50mA, 10V
1W
60MHz
-55°C ~ 150°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
FZT758TC
Diodes Incorporated

TRANS PNP 400V 0.5A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: TO-261-4, TO-261AA
Estoque3.376
500mA
400V
500mV @ 10mA, 100mA
100nA
40 @ 200mA, 10V
2W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BD1356S
Fairchild/ON Semiconductor

TRANS NPN 45V 1.5A TO-126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
pacote: TO-225AA, TO-126-3
Estoque2.544
1.5A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BC237TFR
Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque4.960
100mA
45V
600mV @ 5mA, 100mA
15nA
120 @ 2mA, 5V
500mW
250MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2N3771
STMicroelectronics

TRANS NPN 40V 30A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
  • Current - Collector Cutoff (Max): 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
  • Power - Max: 150W
  • Frequency - Transition: 200kHz
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacote: TO-204AA, TO-3
Estoque12.540
30A
40V
4V @ 6A, 30A
10mA
15 @ 15A, 4V
150W
200kHz
-
Chassis Mount
TO-204AA, TO-3
TO-3
BCX71JE6433HTMA1
Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque6.992
100mA
45V
550mV @ 1.25mA, 50mA
20nA (ICBO)
250 @ 2mA, 5V
330mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
JANTX2N918UB
Microsemi Corporation

TRANS NPN 15V 0.05A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacote: 4-SMD, No Lead
Estoque4.256
50mA
15V
400mV @ 1mA, 10mA
1µA (ICBO)
20 @ 3mA, 1V
200mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
2SC3649T-TD-E
ON Semiconductor

TRANS NPN 160V 1.5A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
pacote: TO-243AA
Estoque3.392
1.5A
160V
450mV @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
500mW
120MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
hot 2SC6095-TD-E
ON Semiconductor

TRANS NPN 80V 2.5A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
  • Power - Max: 1.3W
  • Frequency - Transition: 350MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
pacote: TO-243AA
Estoque122.220
2.5A
80V
150mV @ 50mA, 1A
1µA (ICBO)
300 @ 100mA, 5V
1.3W
350MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
TSA874CW RPG
TSC America Inc.

TRANSISTOR, PNP, -500V, -0.15A,

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: TO-261-4, TO-261AA
Estoque7.648
150mA
500V
500mV @ 10mA, 50mA
100nA (ICBO)
150 @ 10mA, 10V
1W
50MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
NSVBC858BLT1G
ON Semiconductor

TRANS PNP 30V 0.1A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque3.296
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
300mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MS2N4931
Microsemi Corporation

TRANS PNP TO-39

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.528
-
-
-
-
-
-
-
-
-
-
-
2SB1202S-E
ON Semiconductor

TRANS PNP 50V 5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 0.7mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque19.344
5A
50V
0.7mV @ 100mA, 2A
1µA (ICBO)
140 @ 100mA, 2V
1W
150MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
hot 2SB1218ARL
Panasonic Electronic Components

TRANS PNP 45V 0.1A SMINI 3P

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacote: SC-70, SOT-323
Estoque237.984
100mA
45V
500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
150mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
hot DSC700300L
Panasonic Electronic Components

TRANS NPN 50V 1A MINIP3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
pacote: TO-243AA
Estoque108.000
1A
50V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 500mA, 10V
1W
170MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
FMMT494TA
Diodes Incorporated

TRANS NPN 120V 1A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque24.420
1A
120V
300mV @ 50mA, 500mA
100nA
100 @ 250mA, 10V
500mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SA1163-BL,LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: TO-236-3, SC-59, SOT-23-3
Estoque102.510
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
hot FMMT560TA
Diodes Incorporated

TRANS PNP 500V 0.15A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque1.087.260
150mA
500V
500mV @ 10mA, 50mA
100nA
80 @ 50mA, 10V
500mW
60MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NTE2547
NTE Electronics, Inc

TRANS NPN DARL 100V 8A TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
  • Power - Max: 2 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: -
Request a Quote
8 A
100 V
1.5V @ 8mA, 4A
100µA (ICBO)
1500 @ 4A, 3V
2 W
20MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220
2N4036L
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PN4888
onsemi

TRANS PNP 150V 0.1A TO92-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Power - Max: 625 mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: -
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100 mA
150 V
500mV @ 1mA, 10mA
-
40 @ 10mA, 10V
625 mW
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JAN2N4449UB
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacote: -
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-
15 V
450mV @ 10mA, 100mA
400nA
40 @ 10mA, 1V
400 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JAN2N3725
Microchip Technology

TRANS NPN 50V 0.5A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacote: -
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500 mA
50 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JAN2N1890S
Microchip Technology

TRANS NPN 80V 0.5A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
pacote: -
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500 mA
80 V
5V @ 15mA, 150mA
10nA (ICBO)
100 @ 150mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)