Página 312 - Transistores - Bipolares (BJT) - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - Simples

Registros 20.307
Página  312/726
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BD245B-S
Bourns Inc.

TRANS NPN 80V 10A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
pacote: TO-218-3
Estoque2.608
10A
80V
4V @ 2.5A, 10A
700µA
20 @ 3A, 4V
3W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
2SD1407A-Y(F)
Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
  • Power - Max: 30W
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque3.472
5A
100V
2V @ 400mA, 4A
100µA (ICBO)
120 @ 1A, 5V
30W
12MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
BC368,126
NXP

TRANS NPN 20V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 830mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque2.288
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
85 @ 500mA, 1V
830mW
170MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MMBT3906K
Fairchild/ON Semiconductor

TRANS PNP 40V 0.2A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque38.400
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC547CTF
Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque3.408
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC239ABU
Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque3.392
100mA
25V
600mV @ 5mA, 100mA
15nA
120 @ 2mA, 5V
500mW
250MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SB1722J0L
Panasonic Electronic Components

TRANS PNP 100V 0.02A SSMINI-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
pacote: SC-89, SOT-490
Estoque4.320
20mA
100V
300mV @ 1mA, 10mA
1µA
200 @ 2mA, 10V
125mW
200MHz
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F1
hot BC327
ON Semiconductor

TRANS PNP 45V 0.8A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 260MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque971.904
800mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
625mW
260MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JAN2N5581
Microsemi Corporation

TRANS NPN 50V 0.8A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
pacote: TO-206AB, TO-46-3 Metal Can
Estoque6.272
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
500mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46 (TO-206AB)
2SB1202T-E
ON Semiconductor

TRANS PNP 50V 5A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 0.7mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque6.048
5A
50V
0.7mV @ 100mA, 2A
1µA (ICBO)
200 @ 100mA, 2V
1W
150MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
2N6123
Central Semiconductor Corp

TRANS NPN 80V 4A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
  • Power - Max: 40W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: TO-220-3
Estoque6.912
4A
80V
1.4V @ 1A, 4A
1mA
20 @ 1.5A, 2V
40W
2.5MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot FMMT634QTA
Diodes Incorporated

TRANS NPN DARL 100V 0.9A SOT23-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 900mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 960mV @ 5mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 806mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: TO-236-3, SC-59, SOT-23-3
Estoque72.000
900mA
100V
960mV @ 5mA, 1A
100nA
20000 @ 100mA, 5V
806mW
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SD235800A
Panasonic Electronic Components

TRANS NPN 10V 1A MT-2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-2-A1
pacote: 3-SIP
Estoque16.014
1A
10V
150mV @ 20mA, 500mA
1µA (ICBO)
200 @ 100mA, 2V
1W
120MHz
150°C (TJ)
Through Hole
3-SIP
MT-2-A1
hot MJF127G
ON Semiconductor

TRANS PNP DARL 100V 5A TO220FP

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
pacote: TO-220-3 Full Pack
Estoque136.800
5A
100V
3.5V @ 20mA, 5A
10µA
2000 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot ZXTP2012GTA
Diodes Incorporated

TRANS PNP 60V 5.5A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 3W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: TO-261-4, TO-261AA
Estoque34.560
5.5A
60V
250mV @ 500mA, 5A
20nA (ICBO)
100 @ 2A, 1V
3W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JAN2N3725UB
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacote: -
Request a Quote
500 mA
50 V
-
-
-
-
-
200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
NTE2665
NTE Electronics, Inc

TRANS NPN 800V 28A TO3PBL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 28 A
  • Voltage - Collector Emitter Breakdown (Max): 800 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 5.5A, 22A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 2A, 5V
  • Power - Max: 220 W
  • Frequency - Transition: 2MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PBL
pacote: -
Request a Quote
28 A
800 V
3V @ 5.5A, 22A
1mA (ICBO)
22 @ 2A, 5V
220 W
2MHz
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PBL
LB1233L-E-ON
onsemi

HIGH-VOLTAGE/LARGE-CURRENT DARLI

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SD879
onsemi

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5232A-PBFREE
Central Semiconductor Corp

TRANS NPN 50V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 625 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: -
Estoque49.305
100 mA
50 V
125mV @ 1mA, 10mA
30nA
250 @ 2mA, 5V
625 mW
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SD1590-2-S6
Renesas Electronics Corporation

NPN BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SAR533PHZGT100
Rohm Semiconductor

TRANS PNP 50V 3A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacote: -
Estoque4.995
3 A
50 V
400mV @ 50mA, 1A
1µA (ICBO)
180 @ 50mA, 3V
500 mW
300MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SA1650-1-AZ
Renesas Electronics Corporation

HIGH SPEED SWITCHING TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC847B-QR
Nexperia USA Inc.

TRANS NPN 45V 0.1A TO236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacote: -
Estoque159.885
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
FZT951QTC
Diodes Incorporated

PWR LOW SAT TRANSISTOR SOT223 T&

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 460mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1.6 W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacote: -
Request a Quote
5 A
60 V
460mV @ 500mA, 5A
50nA
100 @ 2A, 1V
1.6 W
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N4111
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 15 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
pacote: -
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5 A
60 V
-
-
-
15 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2N3947-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.2A TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 1.2 W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacote: -
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200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
1.2 W
300MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
BC807-40W-AU_R1_000A1
Panjit International Inc.

TRANS PNP 45V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacote: -
Estoque27.660
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323