Página 153 - Transistores - Bipolares (BJT) - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TIP106	Central Semiconductor Corp	TRANS PNP 80V 8A TO220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 80W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacote: TO-220-3	Estoque13.740	8A	80V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	80W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MPS8098_D27Z	Fairchild/ON Semiconductor	TRANS NPN 60V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 625mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Estoque5.504	500mA	60V	400mV @ 5mA, 100mA	100nA	100 @ 1mA, 5V	625mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSH31CTM	Fairchild/ON Semiconductor	TRANS NPN 100V 3A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 1.56W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque3.008	3A	100V	1.2V @ 375mA, 3A	50µA	10 @ 3A, 4V	1.56W	3MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
BUX48	STMicroelectronics	TRANS NPN 400V 15A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 175W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacote: TO-204AA, TO-3	Estoque5.536	15A	400V	5V @ 3A, 15A	200µA	-	175W	-	200°C (TJ)	Chassis Mount	TO-204AA, TO-3	TO-3
JAN2N4238	Microsemi Corporation	TRANS NPN 60V 1A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacote: TO-205AD, TO-39-3 Metal Can	Estoque5.504	1A	60V	600mV @ 100mA, 1A	100nA (ICBO)	30 @ 250mA, 1V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANTXV2N3637UB	Microsemi Corporation	TRANS PNP 175V 1A Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	pacote: 3-SMD, No Lead	Estoque5.696	1A	175V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1.5W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
2SC5706-P-E	ON Semiconductor	TRANS NPN 100V 5A Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 800mW Frequency - Transition: 400MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP	pacote: TO-251-3 Short Leads, IPak, TO-251AA	Estoque30.984	5A	100V	240mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 2V	800mW	400MHz	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP
FJAFS1720TU	Fairchild/ON Semiconductor	TRANS NPN 800V 12A TO-3PF Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 250mV @ 3.33A, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8.5 @ 11A, 5V Power - Max: 60W Frequency - Transition: 15MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF-3	pacote: TO-3P-3 Full Pack	Estoque6.960	12A	800V	250mV @ 3.33A, 10A	100µA	8.5 @ 11A, 5V	60W	15MHz	-55°C ~ 125°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF-3
2SC2712-OTE85LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	pacote: TO-236-3, SC-59, SOT-23-3	Estoque21.948	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236
BST51,135	Nexperia USA Inc.	TRANS NPN DARL 60V 1A SOT89 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.3W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacote: TO-243AA	Estoque34.230	1A	60V	1.3V @ 500µA, 500mA	50nA	2000 @ 500mA, 10V	1.3W	200MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BD243CG	ON Semiconductor	TRANS NPN 100V 6A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 65W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacote: TO-220-3	Estoque23.124	6A	100V	1.5V @ 1A, 6A	700µA	15 @ 3A, 4V	65W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ZTX705	Diodes Incorporated	TRANS PNP DARL 120V 1A E-LINE Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	pacote: E-Line-3	Estoque18.840	1A	120V	2.5V @ 2mA, 2A	10µA	3000 @ 1A, 5V	1W	160MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
SS8550CBU	Fairchild/ON Semiconductor	TRANS PNP 25V 1.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacote: TO-226-3, TO-92-3 (TO-226AA)	Estoque55.200	1.5A	25V	500mV @ 80mA, 800mA	100nA (ICBO)	120 @ 100mA, 1V	1W	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSA1015YTA	Fairchild/ON Semiconductor	TRANS PNP 50V 0.15A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 400mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Estoque5.200	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	400mW	80MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SCR583D3FRATL	Rohm Semiconductor	NPN, TO-252 (DPAK), 50V 7A, POWE Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V Power - Max: 10 W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	pacote: -	Estoque7.401	7 A	50 V	350mV @ 150mA, 3A	1µA (ICBO)	180 @ 1A, 3V	10 W	280MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
2SC4738-GR-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SSM Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 120 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacote: -	Estoque14.370	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	120 mW	80MHz	-	Surface Mount	SC-75, SOT-416	SSM
DXT5551P5Q-13	Diodes Incorporated	PWR HI VOLTAGE TRANSISTOR PDI5 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 2.25 W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5	pacote: -	Estoque31.200	600 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	2.25 W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI™ 5	PowerDI™ 5
2SC2690-AZ	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 300mA, 5V Power - Max: 1.2 W Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacote: -	Request a Quote	1.2 A	120 V	700mV @ 200mA, 1A	1µA (ICBO)	60 @ 300mA, 5V	1.2 W	175MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
JAN2N5681	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacote: -	Request a Quote	1 A	100 V	1V @ 50mA, 500mA	10µA	40 @ 250mA, 2V	1 W	-	-65°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SCR533PHZGT100	Rohm Semiconductor	TRANS NPN 50V 3A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Power - Max: 500 mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacote: -	Estoque507	3 A	50 V	350mV @ 50mA, 1A	1µA (ICBO)	180 @ 50mA, 3V	500 mW	320MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SCRC41CT116R	Rohm Semiconductor	TRANS NPN 120V 0.05A SST3 Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	pacote: -	Estoque1.734	50 mA	120 V	500mV @ 1mA, 10mA	500nA (ICBO)	180 @ 2mA, 6V	200 mW	140MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
BCP51-QX	Nexperia USA Inc.	BCP51-Q/SOT223/SC-73 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 650 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacote: -	Estoque3.000	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	650 mW	145MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANTX2N2222AUBP-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	pacote: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N4959	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSP2N2222AUA	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	pacote: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	650 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
2N6773	Harris Corporation	TRANS NPN 650V 1A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 650 V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V Power - Max: 40 W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacote: -	Request a Quote	1 A	650 V	1V @ 200mA, 1A	100µA	20 @ 300mA, 3V	40 W	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
BC846CLT1G	onsemi	TRANS NPN 65V 0.1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 225 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacote: -	Estoque42.657	100 mA	65 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	225 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SA1371E-AE	onsemi	TRANS Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

TIP106

Central Semiconductor Corp

TRANS PNP 80V 8A TO220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacote: TO-220-3

Estoque13.740

8A

80V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

80W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

MPS8098_D27Z

Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 625mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Estoque5.504

500mA

60V

400mV @ 5mA, 100mA

100nA

100 @ 1mA, 5V

625mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSH31CTM

Fairchild/ON Semiconductor

TRANS NPN 100V 3A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque3.008

3A

100V

1.2V @ 375mA, 3A

50µA

10 @ 3A, 4V

1.56W

3MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

BUX48

STMicroelectronics

TRANS NPN 400V 15A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 175W
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacote: TO-204AA, TO-3

Estoque5.536

15A

400V

5V @ 3A, 15A

200µA

-

175W

-

200°C (TJ)

Chassis Mount

TO-204AA, TO-3

TO-3

JAN2N4238

Microsemi Corporation

TRANS NPN 60V 1A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacote: TO-205AD, TO-39-3 Metal Can

Estoque5.504

1A

60V

600mV @ 100mA, 1A

100nA (ICBO)

30 @ 250mA, 1V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANTXV2N3637UB

Microsemi Corporation

TRANS PNP 175V 1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

pacote: 3-SMD, No Lead

Estoque5.696

1A

175V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1.5W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

2SC5706-P-E

ON Semiconductor

TRANS NPN 100V 5A

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP

pacote: TO-251-3 Short Leads, IPak, TO-251AA

Estoque30.984

5A

100V

240mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 2V

800mW

400MHz

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

TP

FJAFS1720TU

Fairchild/ON Semiconductor

TRANS NPN 800V 12A TO-3PF

Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 3.33A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8.5 @ 11A, 5V
Power - Max: 60W
Frequency - Transition: 15MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF-3

pacote: TO-3P-3 Full Pack

Estoque6.960

12A

800V

250mV @ 3.33A, 10A

100µA

8.5 @ 11A, 5V

60W

15MHz

-55°C ~ 125°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF-3

2SC2712-OTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

pacote: TO-236-3, SC-59, SOT-23-3

Estoque21.948

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236

BST51,135

Nexperia USA Inc.

TRANS NPN DARL 60V 1A SOT89

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.3W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacote: TO-243AA

Estoque34.230

1A

60V

1.3V @ 500µA, 500mA

50nA

2000 @ 500mA, 10V

1.3W

200MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BD243CG

ON Semiconductor

TRANS NPN 100V 6A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 65W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacote: TO-220-3

Estoque23.124

6A

100V

1.5V @ 1A, 6A

700µA

15 @ 3A, 4V

65W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

ZTX705

Diodes Incorporated

TRANS PNP DARL 120V 1A E-LINE

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

pacote: E-Line-3

Estoque18.840

1A

120V

2.5V @ 2mA, 2A

10µA

3000 @ 1A, 5V

1W

160MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

SS8550CBU

Fairchild/ON Semiconductor

TRANS PNP 25V 1.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA)

Estoque55.200

1.5A

25V

500mV @ 80mA, 800mA

100nA (ICBO)

120 @ 100mA, 1V

1W

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSA1015YTA

Fairchild/ON Semiconductor

TRANS PNP 50V 0.15A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 400mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Estoque5.200

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

400mW

80MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SCR583D3FRATL

Rohm Semiconductor

NPN, TO-252 (DPAK), 50V 7A, POWE

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Power - Max: 10 W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

pacote: -

Estoque7.401

7 A

50 V

350mV @ 150mA, 3A

1µA (ICBO)

180 @ 1A, 3V

10 W

280MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

2SC4738-GR-LXHF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 120 mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacote: -

Estoque14.370

150 mA

50 V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

120 mW

80MHz

-

Surface Mount

SC-75, SOT-416

SSM

DXT5551P5Q-13

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR PDI5

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 2.25 W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5

pacote: -

Estoque31.200

600 mA

160 V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

2.25 W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI™ 5

2SC2690-AZ

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 300mA, 5V
Power - Max: 1.2 W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacote: -

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1.2 A

120 V

700mV @ 200mA, 1A

1µA (ICBO)

60 @ 300mA, 5V

1.2 W

175MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

JAN2N5681

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacote: -

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1 A

100 V

1V @ 50mA, 500mA

10µA

40 @ 250mA, 2V

1 W

-

-65°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SCR533PHZGT100

Rohm Semiconductor

TRANS NPN 50V 3A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Power - Max: 500 mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacote: -

Estoque507

3 A

50 V

350mV @ 50mA, 1A

1µA (ICBO)

180 @ 50mA, 3V

500 mW

320MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SCRC41CT116R

Rohm Semiconductor

TRANS NPN 120V 0.05A SST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

pacote: -

Estoque1.734

50 mA

120 V

500mV @ 1mA, 10mA

500nA (ICBO)

180 @ 2mA, 6V

200 mW

140MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

BCP51-QX

Nexperia USA Inc.

BCP51-Q/SOT223/SC-73

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 650 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacote: -

Estoque3.000

1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

650 mW

145MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANTX2N2222AUBP-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

pacote: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N4959

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-

JANSP2N2222AUA

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

pacote: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

650 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

2N6773

Harris Corporation

TRANS NPN 650V 1A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V
Power - Max: 40 W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacote: -

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1 A

650 V

1V @ 200mA, 1A

100µA

20 @ 300mA, 3V

40 W

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

BC846CLT1G

onsemi

TRANS NPN 65V 0.1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 225 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacote: -

Estoque42.657

100 mA

65 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

225 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SA1371E-AE

onsemi

TRANS

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Request a Quote

-