Página 5 - Transistores - Bipolares (BJT) - Matrizes pré-polarizadas | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - Matrizes pré-polarizadas

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR135SE6327BTSA1
Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacote: 6-VSSOP, SC-88, SOT-363
Estoque3.984
100mA
50V
10k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
-
150MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot MUN5332DW1T1
ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque16.908
100mA
50V
4.7k
4.7k
15 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot MUN5230DW1T1
ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque17.892
100mA
50V
1k
1k
3 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
EMA6DXV5T1G
ON Semiconductor

TRANS 2PNP PREBIAS 0.23W SOT553

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
pacote: SOT-553
Estoque7.664
100mA
50V
47k
-
160 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
230mW
Surface Mount
SOT-553
SOT-553
hot UP0439000L
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k, 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMINI6-F1
pacote: SOT-563, SOT-666
Estoque503.700
100mA
50V
47k, 10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz, 80MHz
125mW
Surface Mount
SOT-563, SOT-666
SSMINI6-F1
DCX124EU-7
Diodes Incorporated

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque2.976
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PBLS2003S,115
NXP

TRANS NPN PREBIAS/PNP 1.5W 8SO

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V, 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 2A, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 100MHz
  • Power - Max: 1.5W
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.272
100mA, 3A
50V, 20V
10k
10k
30 @ 5mA, 5V / 150 @ 2A, 2V
150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
1µA, 100nA
100MHz
1.5W
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FMG1AT148
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5
pacote: SC-74A, SOT-753
Estoque645.420
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMT5
hot NSBC144EDXV6T5G
ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: SOT-563, SOT-666
Estoque79.800
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
hot EMH4T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacote: SOT-563, SOT-666
Estoque564.360
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
500nA (ICBO)
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
hot DCX124EUQ-7-F
Diodes Incorporated

TRANS PREBIAS NPN/PNP 50V SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque30.000
100mA
50V
22k
22k
100 @ 1mA, 5V
-
500nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot PEMH20,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacote: SOT-563, SOT-666
Estoque336.000
100mA
50V
2.2k
2.2k
30 @ 20mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
PEMD16,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP SOT666

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacote: SOT-563, SOT-666
Estoque7.136
100mA
50V
22k
47k
80 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
NSTB60BDW1T1G
ON Semiconductor

TRANS NPN PREBIAS/PNP 0.25W SC88

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque2.896
150mA
50V
22k
47k
80 @ 5mA, 10V / 120 @ 5mA, 10V
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
500nA
140MHz
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot PEMH11,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacote: SOT-563, SOT-666
Estoque96.000
100mA
50V
10k
10k
30 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
hot IMH23T110
Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
pacote: SC-74, SOT-457
Estoque2.314.800
600mA
20V
4.7k
-
820 @ 50mA, 5V
150mV @ 2.5mA, 50mA
-
150MHz
300mW
Surface Mount
SC-74, SOT-457
SMT6
hot UMD2NTR
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque997.944
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
XN0621500L
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: MINI6-G1
pacote: SOT-23-6
Estoque2.528
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
300mW
Surface Mount
SOT-23-6
MINI6-G1
hot FMA2AT148
Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5
pacote: SC-74A, SOT-753
Estoque1.042.488
100mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMT5
RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque35.928
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN4984FE,LF(CB
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque2.800
100mA
50V
47k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
RN1903,LF(CT
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.296
100mA
50V
22k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
PBLS2023D,115
Nexperia USA Inc.

TRANS PREBIAS DUAL PNP 6TSOP

  • Transistor Type: 1 PNP Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V, 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 1A, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 130MHz
  • Power - Max: 760mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacote: SC-74, SOT-457
Estoque24.972
100mA, 1.8A
50V, 20V
10k
10k
30 @ 5mA, 5V / 200 @ 1A, 2V
150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
1µA, 100nA
130MHz
760mW
Surface Mount
SC-74, SOT-457
6-TSOP
RN4986FE,LF(CB
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque33.966
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz, 200MHz
100mW
Surface Mount
SOT-563, SOT-666
ES6
PBLS4004Y,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 300MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacote: 6-TSSOP, SC-88, SOT-363
Estoque29.610
100mA, 500mA
50V, 40V
22k
22k
60 @ 5mA, 5V / 150 @ 100mA, 2V
150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
1µA
300MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot UMD9NTR
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque5.431.140
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
BCR10PNH6327XTSA1
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacote: 6-VSSOP, SC-88, SOT-363
Estoque140.508
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
-
130MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
PIMC31,115
Nexperia USA Inc.

TRANS NPN/PNP PREBIAS 6TSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 420mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacote: SC-74, SOT-457
Estoque106.572
500mA
50V
1k
10k
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
420mW
Surface Mount
SC-74, SOT-457
6-TSOP
PUMD3,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacote: 6-TSSOP, SC-88, SOT-363
Estoque71.544
100mA
50V
10k
10k
30 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot PUMD2,125
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacote: 6-TSSOP, SC-88, SOT-363
Estoque144.000
100mA
50V
22k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP