Página 974 - Diodos - Retificadores - Simples | Produtos semicondutores discretos | Heisener Electronics
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Diodos - Retificadores - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-8TQ100GSTRLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 280µA @ 100V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.016
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
280µA @ 100V
500pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
1N4005GP-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacote: DO-204AL, DO-41, Axial
Estoque5.584
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
MBR16H60HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 730mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: TO-220-2
Estoque5.264
60V
16A
730mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot SS1P3-E3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-220AA
Estoque216.000
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 30V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
MBRF1635/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: TO-220-2 Full Pack, Isolated Tab
Estoque3.248
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
MBRF5200 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: TO-220-2 Full Pack
Estoque4.128
200V
5A
1.02V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
NRVUS360VBT3G
ON Semiconductor

DIODE GEN PURP 600V 3A SMB2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: DO-214AA, SMB
Estoque4.816
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
3µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
RS3DHR7G
TSC America Inc.

DIODE, FAST, 3A, 200V, 150NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AB, SMC
Estoque7.424
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
RS3G M6G
TSC America Inc.

DIODE, FAST, 3A, 400V, 150NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AB, SMC
Estoque6.528
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
NSVR0230M2T5G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD723

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-723
  • Supplier Device Package: SOD-723
  • Operating Temperature - Junction: -55°C ~ 125°C
pacote: SOD-723
Estoque3.136
30V
200mA (DC)
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 30V
-
Surface Mount
SOD-723
SOD-723
-55°C ~ 125°C
SDT30100CT
Diodes Incorporated

SCHOTTKY RECTIFIER TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque6.084
100V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
SF1006G C0G
TSC America Inc.

DIODE, SUPER FAST, 10A, 400V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: TO-220-3
Estoque4.528
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
ES3DB R5G
TSC America Inc.

DIODE, SUPER FAST, 3A, 200V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 46pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AA, SMB
Estoque5.296
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
hot GP02-20-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 250MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: DO-204AL, DO-41, Axial
Estoque41.640
2000V
250mA
3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 2000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SD2010S040S2R0
AVX Corporation

DIODE SCHOTTKY 40V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2010/DO-214AC
  • Operating Temperature - Junction: -55°C ~ 125°C
pacote: 2-SMD, No Lead
Estoque26.340
40V
2A (DC)
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
2-SMD, No Lead
2010/DO-214AC
-55°C ~ 125°C
PCDP20120G1_T0_00001
Panjit International Inc.

DIODE SIL CARB 1.2KV 20A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
  • Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque5.982
1200 V
20A
1.7 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
180 µA @ 1200 V
1040pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
TSN520M60
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 20A 8DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-PDFN (5x6)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Request a Quote
60 V
20A
580 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Surface Mount
8-PowerLDFN
8-PDFN (5x6)
-55°C ~ 150°C
GP10KE-046E3-93
Vishay General Semiconductor - Diodes Division

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
V8P22-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2.9A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: 440pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: -
Request a Quote
200 V
2.9A
900 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
440pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
1SS120TE-E
Renesas Electronics Corporation

RECTIFIER, 0.15A, SILICON, DO-34

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TUAU6DH
Taiwan Semiconductor Corporation

50NS, 6A, 200V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 64pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque18.000
200 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
64pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
SMPC4.6U
-55°C ~ 175°C
RBR3LAM60BTFTR
Rohm Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
pacote: -
Estoque6.162
60 V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
LSIC2SD120C10A
Littelfuse Inc.

SIC SCHOTTKY DIODE 1200V 10A TO2

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DZ1070N28KHPSA1
Infineon Technologies

DIODE GP 2.8KV 1070A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: -
Request a Quote
2800 V
1070A
1.52 V @ 3400 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2800 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
GSBAV3004W
Good-Ark Semiconductor

DIODE, SWITCHING, 225MA, 350V, S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 225mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 240 V
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: -
Estoque32.508
300 V
225mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 240 V
1pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
SURA8260T3G-VF01
onsemi

DIODE GEN PURP 600V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Estoque15.000
600 V
2A
1.45 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 600 V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
SMD210HL-TP
Micro Commercial Co

TVS DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HL
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
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100 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HL
-55°C ~ 150°C
JANTXV1N6940UTK3CS
Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 15 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
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15 V
150A
500 mV @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 15 V
-
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 175°C