Página 893 - Diodos - Retificadores - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UF4004 TR	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-204AL, DO-41, Axial	Estoque6.416	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SB040-E3/100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY .6A 40V AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -65°C ~ 125°C	pacote: MPG06, Axial	Estoque4.848	40V	600mA	550mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	MPG06, Axial	MPG06	-65°C ~ 125°C
AU2PDHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.6A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 42pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-277, 3-PowerDFN	Estoque6.128	200V	1.6A (DC)	1.9V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 200V	42pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
FGP20CHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-204AC, DO-15, Axial	Estoque6.400	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	45pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
V30100S-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 30A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	pacote: TO-220-3	Estoque3.424	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
GKR71/16	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 95A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 95A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 180°C	pacote: DO-203AB, DO-5, Stud	Estoque5.232	1600V	95A	1.5V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 180°C
VS-25ETS10STRRPBF	Vishay Semiconductor Diodes Division	DIODE RECT 25A 1000V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque2.032	1000V	25A	1.14V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
VS-30ETH06STRLPBF	Vishay Semiconductor Diodes Division	DIODE FRED 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 28ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque104.880	600V	30A	2.6V @ 30A	Standard Recovery >500ns, > 200mA (Io)	28ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
BYV12-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 1.5A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	pacote: SOD-57, Axial	Estoque4.160	100V	1.5A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 100V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
RS2KHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AA, SMB	Estoque2.240	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
GP10DE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-204AL, DO-41, Axial	Estoque3.488	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SK19TR	SMC Diode Solutions	DIODE SCHOTTKY 90V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90A Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	pacote: DO-214AA, SMB	Estoque5.696	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90A	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
SK5200AFL-TP	Micro Commercial Co	DIODE SCHOTTKY 200V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-221AC, SMA Flat Leads	Estoque2.640	200V	5A	900mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 200V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
STPS1545G	STMicroelectronics	DIODE SCHOTTKY 45V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque5.552	45V	15A	840mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
PDS760Q-13	Diodes Incorporated	DIODE SCHOTTKY 60V 7A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 620mV @ 7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	pacote: PowerDI? 5	Estoque203.682	60V	7A	620mV @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
1N6912UTK2-TR	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V Capacitance @ Vr, F: 1000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	pacote: -	Request a Quote	45 V	25A	640 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 45 V	1000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
D1030N22TXPSA1	Infineon Technologies	DIODE GEN PURP 2.2KV 1030A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 1030A Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	pacote: -	Request a Quote	2200 V	1030A	1.11 V @ 10000 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
NTE5897	NTE Electronics, Inc	DIODE GEN PURP 200V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	pacote: -	Request a Quote	200 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
NTE5953	NTE Electronics, Inc	DIODE GEN PURP 600V 15A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	pacote: -	Request a Quote	600 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 600 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 175°C
S50305	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK56LQ-TP	Micro Commercial Co	SCHOTTKY BARRIER RECTIFIERS 60V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 215pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque18.000	60 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	215pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S8MC-HF	Comchip Technology	DIODE GEN PURP 1KV 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	1000 V	8A	985 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PUUP8BH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque35.700	100 V	8A	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	96pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
JANTX1N6911UTK2CS	Microchip Technology	DIODE SCHOTTKY 30V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	pacote: -	Request a Quote	30 V	25A	540 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 30 V	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
UST1M	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	pacote: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
HRW0202ATL-E	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S4205TS	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE607	NTE Electronics, Inc	DIODE GEN PURP 100V 100MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 70 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -25°C ~ 70°C	pacote: -	Request a Quote	100 V	100mA	3.3 V @ 70 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 100 V	-	Through Hole	Axial	Axial	-25°C ~ 70°C
SK56CH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	60 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HVM187WK-JTL-E	Renesas Electronics Corporation	DIODE FOR FREQUENCY ATTENUATOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

UF4004 TR

Central Semiconductor Corp

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-204AL, DO-41, Axial

Estoque6.416

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SB040-E3/100

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY .6A 40V AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -65°C ~ 125°C

pacote: MPG06, Axial

Estoque4.848

40V

600mA

550mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

MPG06, Axial

MPG06

-65°C ~ 125°C

AU2PDHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-277, 3-PowerDFN

Estoque6.128

200V

1.6A (DC)

1.9V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 200V

42pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

FGP20CHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-204AC, DO-15, Axial

Estoque6.400

150V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

45pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

V30100S-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

pacote: TO-220-3

Estoque3.424

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

GKR71/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 95A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 95A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 180°C

pacote: DO-203AB, DO-5, Stud

Estoque5.232

1600V

95A

1.5V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 180°C

VS-25ETS10STRRPBF

Vishay Semiconductor Diodes Division

DIODE RECT 25A 1000V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque2.032

1000V

25A

1.14V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 1000V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

VS-30ETH06STRLPBF

Vishay Semiconductor Diodes Division

DIODE FRED 30A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque104.880

600V

30A

2.6V @ 30A

Standard Recovery >500ns, > 200mA (Io)

28ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

BYV12-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 1.5A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

pacote: SOD-57, Axial

Estoque4.160

100V

1.5A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 100V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

RS2KHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AA, SMB

Estoque2.240

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

17pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

GP10DE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-204AL, DO-41, Axial

Estoque3.488

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SK19TR

SMC Diode Solutions

DIODE SCHOTTKY 90V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 90A
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C

pacote: DO-214AA, SMB

Estoque5.696

90V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 90A

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 125°C

SK5200AFL-TP

Micro Commercial Co

DIODE SCHOTTKY 200V 5A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-221AC, SMA Flat Leads

Estoque2.640

200V

5A

900mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 200V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-55°C ~ 150°C

STPS1545G

STMicroelectronics

DIODE SCHOTTKY 45V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque5.552

45V

15A

840mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

PDS760Q-13

Diodes Incorporated

DIODE SCHOTTKY 60V 7A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

pacote: PowerDI? 5

Estoque203.682

60V

7A

620mV @ 7A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

1N6912UTK2-TR

Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

Request a Quote

45 V

25A

640 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 45 V

1000pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

D1030N22TXPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 1030A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 1030A
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

pacote: -

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2200 V

1030A

1.11 V @ 10000 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2200 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 160°C

NTE5897

NTE Electronics, Inc

DIODE GEN PURP 200V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

pacote: -

Request a Quote

200 V

16A

1.23 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

NTE5953

NTE Electronics, Inc

DIODE GEN PURP 600V 15A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

pacote: -

Request a Quote

600 V

15A

1.5 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 600 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-65°C ~ 175°C

S50305

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

SK56LQ-TP

Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 60V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 215pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque18.000

60 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

215pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

S8MC-HF

Comchip Technology

DIODE GEN PURP 1KV 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

1000 V

8A

985 mV @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PUUP8BH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 8A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

Estoque35.700

100 V

8A

1.05 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 100 V

96pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

JANTX1N6911UTK2CS

Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

Request a Quote

30 V

25A

540 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 30 V

-

Surface Mount

ThinKey™2

-65°C ~ 150°C

UST1M

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

pacote: -

Request a Quote

1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

HRW0202ATL-E

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

S4205TS

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

NTE607

NTE Electronics, Inc

DIODE GEN PURP 100V 100MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 70 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -25°C ~ 70°C

pacote: -

Request a Quote

100 V

100mA

3.3 V @ 70 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 100 V

-

Through Hole

Axial

-25°C ~ 70°C

SK56CH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

60 V

5A

750 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

HVM187WK-JTL-E

Renesas Electronics Corporation

DIODE FOR FREQUENCY ATTENUATOR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-