Página 881 - Diodos - Retificadores - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BY399P-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	pacote: DO-201AD, Axial	Estoque4.320	800V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
LSM845JE3	Microsemi Corporation	DIODE SCHOTTKY 45V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AB, SMC	Estoque7.376	45V	8A	520mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
80EPS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 80A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	pacote: TO-247-3	Estoque6.096	800V	80A	1.17V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
A399M	Powerex Inc.	DIODE FAST 400A 600V DO-200AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Estoque7.952	-	-	-	-	-	-	-	-	-	-	-
DMA10I1600PA	IXYS	DIODE GEN PURP 1600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1600V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-220-2	Estoque2.784	1600V	10A	1.26V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1600V	4pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF65G B0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-201AD, Axial	Estoque3.424	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
AS01V	Sanken	DIODE GEN PURP 400V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	pacote: Axial	Estoque4.752	400V	600mA	1.5V @ 600mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
UF1007-E3/54	Vishay Semiconductor Diodes Division	DIODE 1A 1000V 75NS DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-204AL, DO-41, Axial	Estoque5.056	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS3MB M4G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AA, SMB	Estoque4.816	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2D M4G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AA, SMB	Estoque4.560	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1GL RUG	TSC America Inc.	DIODE, FAST, 0.8A, 400V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-219AB	Estoque5.520	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
LL46-GS08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 150MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 250mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	pacote: DO-213AC, MINI-MELF, SOD-80	Estoque101.472	100V	150mA	1V @ 250mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 75V	10pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
B245AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AC, SMA	Estoque5.872	45V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	93pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
LS103A-GS18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 15A SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 125°C (Max)	pacote: SOD-80 Variant	Estoque3.664	40V	-	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	125°C (Max)
C3D10170H	Cree/Wolfspeed	DIODE SCHOTTKY 1.7KV 14.4A TO247 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 14.4A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 1700V Capacitance @ Vr, F: 827pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-247-2	Estoque13.728	1700V	14.4A (DC)	2V @ 10A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1700V	827pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
NTE6115	NTE Electronics, Inc	DIODE GP 1.2KV 1625A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1625A Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB Operating Temperature - Junction: -30°C ~ 175°C	pacote: -	Request a Quote	1200 V	1625A	1.93 V @ 3770 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 1200 V	-	Clamp On	DO-200AB, B-PUK	DO-200AB	-30°C ~ 175°C
S31100	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NRVBM2H100T3G-OD	onsemi	DIODE SCHOTTKY 100V 2A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C	pacote: -	Request a Quote	100 V	2A	840 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 100 V	-	Surface Mount	DO-216AA	Powermite	-65°C ~ 175°C
1N6643U-TR	Microchip Technology	DIODE GP 75V 300MA SQ-MELF B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 500 nA @ 50 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	pacote: -	Request a Quote	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 50 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 200°C
1N4148W-TP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	pacote: -	Request a Quote	100 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
CMR3U-02M-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	pacote: -	Request a Quote	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
MSASC25H45KV	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	45 V	25A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	ThinKey™2	ThinKey™2	-55°C ~ 150°C
TUAR4DH	Taiwan Semiconductor Corporation	150NS, 4A, 200V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque18.000	200 V	4A	1.4 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	31pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
GS2008HE_R1_00001	Panjit International Inc.	DIODE GEN PURP 800V 2A SOD123HE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	12pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
STB30100	SMC Diode Solutions	DIODE SCHOTTKY 100V D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque2.301	100 V	-	750 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HS1GF-T	Taiwan Semiconductor Corporation	50NS, 1A, 400V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque22.500	400 V	1A	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	11pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
CMSH2-60M-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 60V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	pacote: -	Estoque328.620	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	120pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JANS1N5417	Microchip Technology	DIODE GEN PURP 200V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	pacote: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C

BY399P-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C

pacote: DO-201AD, Axial

Estoque4.320

800V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

10µA @ 800V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 125°C

LSM845JE3

Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AB, SMC

Estoque7.376

45V

8A

520mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

80EPS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 80A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

pacote: TO-247-3

Estoque6.096

800V

80A

1.17V @ 80A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 800V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

A399M

Powerex Inc.

DIODE FAST 400A 600V DO-200AA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Estoque7.952

-

DMA10I1600PA

IXYS

DIODE GEN PURP 1600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-220-2

Estoque2.784

1600V

10A

1.26V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1600V

4pF @ 400V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SF65G B0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-201AD, Axial

Estoque3.424

300V

6A

1.3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

AS01V

Sanken

DIODE GEN PURP 400V 600MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

pacote: Axial

Estoque4.752

400V

600mA

1.5V @ 600mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

UF1007-E3/54

Vishay Semiconductor Diodes Division

DIODE 1A 1000V 75NS DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-204AL, DO-41, Axial

Estoque5.056

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

HS3MB M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AA, SMB

Estoque4.816

-

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

HS2D M4G

TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AA, SMB

Estoque4.560

200V

2A

1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS1GL RUG

TSC America Inc.

DIODE, FAST, 0.8A, 400V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-219AB

Estoque5.520

400V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

LL46-GS08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 150MA SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 250mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)

pacote: DO-213AC, MINI-MELF, SOD-80

Estoque101.472

100V

150mA

1V @ 250mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 75V

10pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

125°C (Max)

B245AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AC, SMA

Estoque5.872

45V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

93pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

LS103A-GS18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 15A SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)

pacote: SOD-80 Variant

Estoque3.664

40V

-

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

125°C (Max)

C3D10170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 14.4A TO247

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 14.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 1700V
Capacitance @ Vr, F: 827pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-247-2

Estoque13.728

1700V

14.4A (DC)

2V @ 10A

No Recovery Time > 500mA (Io)

0ns

60µA @ 1700V

827pF @ 0V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

NTE6115

NTE Electronics, Inc

DIODE GP 1.2KV 1625A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1625A
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB
Operating Temperature - Junction: -30°C ~ 175°C

pacote: -

Request a Quote

1200 V

1625A

1.93 V @ 3770 A

Standard Recovery >500ns, > 200mA (Io)

-

30 mA @ 1200 V

-

Clamp On

DO-200AB, B-PUK

DO-200AB

-30°C ~ 175°C

S31100

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

NRVBM2H100T3G-OD

onsemi

DIODE SCHOTTKY 100V 2A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C

pacote: -

Request a Quote

100 V

2A

840 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 100 V

-

Surface Mount

DO-216AA

Powermite

-65°C ~ 175°C

1N6643U-TR

Microchip Technology

DIODE GP 75V 300MA SQ-MELF B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C

pacote: -

Request a Quote

75 V

300mA

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

500 nA @ 50 V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 200°C

1N4148W-TP-HF

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

Request a Quote

100 V

150mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 150°C

CMR3U-02M-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

pacote: -

Request a Quote

200 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

MSASC25H45KV

Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

45 V

25A

610 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

ThinKey™2

-55°C ~ 150°C

TUAR4DH

Taiwan Semiconductor Corporation

150NS, 4A, 200V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque18.000

200 V

4A

1.4 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

31pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 150°C

GS2008HE_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 2A SOD123HE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

800 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

12pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

STB30100

SMC Diode Solutions

DIODE SCHOTTKY 100V D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque2.301

100 V

-

750 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 100 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HS1GF-T

Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque22.500

400 V

1A

1.4 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

11pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

CMSH2-60M-TR13-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 60V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

Estoque328.620

60 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

120pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

JANS1N5417

Microchip Technology

DIODE GEN PURP 200V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

pacote: -

Request a Quote

200 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Through Hole

B, Axial

-65°C ~ 175°C