Página 862 - Diodos - Retificadores - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF10DG-B	Diodes Incorporated	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-204AL, DO-41, Axial	Estoque6.352	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	75pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
RGP10GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-204AL, DO-41, Axial	Estoque5.552	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
VS-309URA200	Vishay Semiconductor Diodes Division	DIODE GP 2KV 330A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	pacote: DO-205AB, DO-9, Stud	Estoque7.264	2000V	330A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VS-300U40AM20	Vishay Semiconductor Diodes Division	DIODE STD REC 300A DO-9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	pacote: DO-205AB, DO-9, Stud	Estoque4.752	400V	300A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
MBR60100R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 100V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-203AB, DO-5, Stud	Estoque3.872	100V	60A	840mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
SFA1001GHC0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 50V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacote: TO-220-2	Estoque5.296	50V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SBYV28-150-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3.5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-201AD, Axial	Estoque3.744	150V	3.5A	1.1V @ 3.5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYW52-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	pacote: SOD-57, Axial	Estoque3.008	200V	2A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 200V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
BYM10-200HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-213AB, MELF (Glass)	Estoque6.672	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM11-1000-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-213AB, MELF (Glass)	Estoque6.848	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SS13-E3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C	pacote: DO-214AC, SMA	Estoque59.796	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 125°C
SD200SCU150A.T	SMC Diode Solutions	PIV 150V IO 60A CHIP SIZE 200MIL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Estoque6.948	-	-	-	-	-	-	-	-	-	-	-
GB02SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 138pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-220-2	Estoque23.010	1200V	2A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	138pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
S320	Fairchild/ON Semiconductor	DIODE SCHOTTKY 200V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 7µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-214AA, SMB	Estoque46.680	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	7µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
STPS20SM100ST	STMicroelectronics	DIODE SCHOTTKY 100V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: 150°C (Max)	pacote: TO-220-3	Estoque17.040	100V	20A	900mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	150°C (Max)
1N3881	GeneSiC Semiconductor	DIODE GEN PURP 200V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-203AA, DO-4, Stud	Estoque16.404	200V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
BY133GP-AP	Micro Commercial Co	DIODE GEN PURP 1.3KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	1300 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1300 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
R25160	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	pacote: -	Request a Quote	1600 V	25A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
ERT3CAF_R1_00001	Panjit International Inc.	DIODE GEN PURP 150V 3A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	50pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
NSVR0240V2T5G	onsemi	DIODE SCHOTTKY 40V 250MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 4pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque24.009	40 V	250mA	700 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	10 µA @ 40 V	4pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
V35PWM153-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 35A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 35 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: 1420pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	pacote: -	Estoque11.355	150 V	35A	1.05 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	1420pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
VS-C04ETOTT-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SGLWH	Taiwan Semiconductor Corporation	0.8A, 400V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque60.000	400 V	800mA	1.1 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	7pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
UES1103SM-1	Microchip Technology	DIODE GP 150V 2.5A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -	pacote: -	Request a Quote	150 V	2.5A	980 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 150 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-
RB088RSM10STFTL1	Rohm Semiconductor	100V 10A, TO-277GE, ULTRA LOW IR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	pacote: -	Estoque10.425	100 V	10A	840 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.7 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
GS1DE-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	200 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TPMR10GH	Taiwan Semiconductor Corporation	35NS, 10A, 400V, SUPER FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Request a Quote	400 V	10A	1.2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
RURD3090	Harris Corporation	RECTIFIER DIODE, 30A, 900V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
AIDW30E60	Infineon Technologies	DIODE GEN PURP 600V 30A TO247-3 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS24L	Taiwan Semiconductor Corporation	2A, 40V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	SOD-123	Sub SMA	-55°C ~ 125°C

SF10DG-B

Diodes Incorporated

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-204AL, DO-41, Axial

Estoque6.352

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

75pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

RGP10GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-204AL, DO-41, Axial

Estoque5.552

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

VS-309URA200

Vishay Semiconductor Diodes Division

DIODE GP 2KV 330A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

pacote: DO-205AB, DO-9, Stud

Estoque7.264

2000V

330A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

VS-300U40AM20

Vishay Semiconductor Diodes Division

DIODE STD REC 300A DO-9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

pacote: DO-205AB, DO-9, Stud

Estoque4.752

400V

300A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

MBR60100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-203AB, DO-5, Stud

Estoque3.872

100V

60A

840mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

SFA1001GHC0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 50V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-220-2

Estoque5.296

50V

10A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

70pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SBYV28-150-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3.5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-201AD, Axial

Estoque3.744

150V

3.5A

1.1V @ 3.5A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

5µA @ 150V

20pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYW52-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

pacote: SOD-57, Axial

Estoque3.008

200V

2A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 200V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

BYM10-200HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-213AB, MELF (Glass)

Estoque6.672

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM11-1000-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-213AB, MELF (Glass)

Estoque6.848

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SS13-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C

pacote: DO-214AC, SMA

Estoque59.796

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 125°C

SD200SCU150A.T

SMC Diode Solutions

PIV 150V IO 60A CHIP SIZE 200MIL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Estoque6.948

-

GB02SLT12-220

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 2A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 138pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-220-2

Estoque23.010

1200V

2A

1.8V @ 2A

No Recovery Time > 500mA (Io)

0ns

50µA @ 1200V

138pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

S320

Fairchild/ON Semiconductor

DIODE SCHOTTKY 200V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 7µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-214AA, SMB

Estoque46.680

200V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

7µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

STPS20SM100ST

STMicroelectronics

DIODE SCHOTTKY 100V 20A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C (Max)

pacote: TO-220-3

Estoque17.040

100V

20A

900mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 100V

-

Through Hole

TO-220-3

TO-220AB

150°C (Max)

1N3881

GeneSiC Semiconductor

DIODE GEN PURP 200V 6A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 15µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-203AA, DO-4, Stud

Estoque16.404

200V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

15µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

BY133GP-AP

Micro Commercial Co

DIODE GEN PURP 1.3KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

1300 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1300 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

R25160

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

pacote: -

Request a Quote

1600 V

25A

1.1 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

ERT3CAF_R1_00001

Panjit International Inc.

DIODE GEN PURP 150V 3A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

50pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

NSVR0240V2T5G

onsemi

DIODE SCHOTTKY 40V 250MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque24.009

40 V

250mA

700 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

10 µA @ 40 V

4pF @ 5V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

V35PWM153-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 35A SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 35 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Capacitance @ Vr, F: 1420pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C

pacote: -

Estoque11.355

150 V

35A

1.05 V @ 35 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 150 V

1420pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 175°C

VS-C04ETOTT-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

SGLWH

Taiwan Semiconductor Corporation

0.8A, 400V, STANDARD RECOVERY RE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque60.000

400 V

800mA

1.1 V @ 800 mA

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

7pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C

UES1103SM-1

Microchip Technology

DIODE GP 150V 2.5A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -

pacote: -

Request a Quote

150 V

2.5A

980 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 150 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-

RB088RSM10STFTL1

Rohm Semiconductor

100V 10A, TO-277GE, ULTRA LOW IR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

pacote: -

Estoque10.425

100 V

10A

840 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3.7 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

GS1DE-TP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

200 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 200 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

TPMR10GH

Taiwan Semiconductor Corporation

35NS, 10A, 400V, SUPER FAST RECO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

Request a Quote

400 V

10A

1.2 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

140pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

RURD3090

Harris Corporation

RECTIFIER DIODE, 30A, 900V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

AIDW30E60

Infineon Technologies

DIODE GEN PURP 600V 30A TO247-3

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

SS24L

Taiwan Semiconductor Corporation

2A, 40V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

pacote: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

SOD-123

Sub SMA

-55°C ~ 125°C