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Diodos - Retificadores - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTXV1N1202AR
Microsemi Corporation

DIODE GEN PURP 200V 12A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: DO-203AA, DO-4, Stud
Estoque5.792
200V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
EGP10BEHM3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: DO-204AL, DO-41, Axial
Estoque6.448
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
R9G20211ASOO
Powerex Inc.

DIODE FAST REC R9G 1100A 200V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Estoque7.552
-
-
-
-
-
-
-
-
-
-
-
hot SPV1002T40
STMicroelectronics

DIODE GEN PURP 40V 16A TO220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 180mV @ 16A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
  • Operating Temperature - Junction: -45°C ~ 175°C
pacote: TO-220-3
Estoque263.880
40V
16A (DC)
180mV @ 16A
-
-
1µA @ 40V
-
Through Hole
TO-220-3
TO-220
-45°C ~ 175°C
EGP10DHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: DO-204AL, DO-41, Axial
Estoque3.216
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
MBR6080
GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: DO-203AB, DO-5, Stud
Estoque4.224
80V
60A
840mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
SF62GHA0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-201AD, Axial
Estoque3.632
100V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS34LHMTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
pacote: DO-219AB
Estoque2.912
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
GSD2004WS-HE3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 240V
  • Current - Average Rectified (Io): 225mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 240V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
pacote: SC-76, SOD-323
Estoque7.072
240V
225mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 240V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
PMEG3005EB,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 500MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 30pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 150°C (Max)
pacote: SC-79, SOD-523
Estoque2.912
30V
500mA (DC)
500mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
30pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
150°C (Max)
VSKY20401608-G4-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A CLP1608-2L

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 40V
  • Capacitance @ Vr, F: 340pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: CLP1608-2L
  • Operating Temperature - Junction: 125°C (Max)
pacote: 0603 (1608 Metric)
Estoque37.560
40V
2A
580mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
340pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
CLP1608-2L
125°C (Max)
PSDB3060S1_T0_00001
Panjit International Inc.

DIODE GEN PURP 600V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Estoque6.000
600 V
30A
2.3 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
250 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
-55°C ~ 150°C
MBR10200_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 200V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Estoque2.391
200 V
10A
900 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
DTH810FP
Diodes Incorporated

DIODE GEN PURP 1KV 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Estoque135
1000 V
8A
2 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
5 µA @ 1000 V
40pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC (Type WX)
-55°C ~ 150°C
MER802FT_T0_00601
Panjit International Inc.

DIODE GEN PURP 200V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque6.000
200 V
8A
950 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 200 V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 175°C
PCDD08120G1_L2_00001
Panjit International Inc.

DIODE SIL CARB 1.2KV 8A TO252AA

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
  • Capacitance @ Vr, F: 418pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque8.637
1200 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
418pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
VS-45EPF06L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 45 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: -
Request a Quote
600 V
45A
1.31 V @ 45 A
Fast Recovery =< 500ns, > 200mA (Io)
180 ns
100 µA @ 600 V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
IDC10D120T6MX1SA1
Infineon Technologies

DIODE GP 1.2KV 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: -
Request a Quote
1200 V
15A
2.05 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
3.5 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
V2N103HM3-H
Vishay

2A, 100V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 100 V
  • Capacitance @ Vr, F: 260pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: -
Request a Quote
100 V
2A
670 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 100 V
260pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 150°C
CRH02-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 500MA S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
pacote: -
Estoque6.372
200 V
500mA
950 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
1N4148WS-H3F-B
Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 150°C
pacote: -
Estoque8.979
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
200 nA @ 80 V
0.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
150°C
FFSH1665A
onsemi

DIODE SIL CARB 650V 23A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 23A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 650 V
  • Capacitance @ Vr, F: 887pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Estoque483
650 V
23A
-
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 650 V
887pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 150°C
JANTX1N5188-TR
Microchip Technology

DIODE GEN PURP 400V 3A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
400 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
2 µA @ 400 V
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
RS1G-13-G
Diodes Incorporated

DIODE GENERAL PURPOSE SMA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N1612R
Microchip Technology

DIODE GEN PURP 50V 7A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
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50 V
7A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
CMSD4448-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 25 nA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 175°C
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75 V
250mA
1 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
25 nA @ 20 V
-
Surface Mount
SC-70, SOT-323
SOT-323
-65°C ~ 175°C
RBR2VWM40ATR
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: PMDE
  • Operating Temperature - Junction: 150°C
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Estoque1.500
40 V
2A
620 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 40 V
-
Surface Mount
2-SMD, Flat Lead
PMDE
150°C
1N6620U
Microchip Technology

DIODE GP 220V 1.2A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 220 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 220 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
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220 V
1.2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
500 nA @ 220 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 150°C
F1200B
Diotec Semiconductor

DIODE FAST P600 100V 200NS 150C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
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100 V
12A
910 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 100 V
-
Through Hole
P600, Axial
P600
-50°C ~ 150°C
JANTXV1N4249-TR
Microchip Technology

DIODE GEN PURP 1KV 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 1 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
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1000 V
1A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
1 µA @ 1 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C