Página 80 - Diodos - Retificadores - Simples | Produtos semicondutores discretos | Heisener Electronics
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Diodos - Retificadores - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10-4003EHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
pacote: DO-204AL, DO-41, Axial
Estoque3.072
200V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
BY133GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -
pacote: DO-204AC, DO-15, Axial
Estoque6.832
1300V
1A
1.2V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1300V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-
2A02-T
Diodes Incorporated

DIODE GEN PURP 100V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: DO-204AC, DO-15, Axial
Estoque7.424
100V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
VS-SD300C16C
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 650A D200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 650A
  • Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, PUK
  • Operating Temperature - Junction: -
pacote: DO-200AA, A-PUK
Estoque7.680
1600V
650A
2.08V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1600V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, PUK
-
1N5622
Semtech Corporation

D MET 1A STD 1KV

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Estoque5.632
-
-
-
-
-
-
-
-
-
-
-
VS-MUR1520-N3
Vishay Semiconductor Diodes Division

DIODE FRED 15A 200V TO-220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: TO-220-3
Estoque4.896
200V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
10µA @ 200V
-
Through Hole
TO-220-3
TO-220AB
-40°C ~ 150°C
SK54CHR7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AB, SMC
Estoque3.008
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SK39B R5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AA, SMB
Estoque3.552
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
hot SBR2U10LP-7
Diodes Incorporated

DIODE SBR 10V 2A X1-DFN1411-3

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 460mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 2mA @ 10V
  • Capacitance @ Vr, F: 102pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: X1-DFN1411-3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: 3-UDFN
Estoque72.000
10V
2A
460mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
2mA @ 10V
102pF @ 5V, 1MHz
Surface Mount
3-UDFN
X1-DFN1411-3
-65°C ~ 150°C
HS1AL RVG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-219AB
Estoque6.848
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
hot 1SS355TE-17
Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 80V
  • Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
pacote: SC-90, SOD-323F
Estoque37.541.160
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 80V
3pF @ 0.5V, 1MHz
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
LXA03T600
Power Integrations

DIODE SCHOTTKY 600V 3A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacote: TO-220-2
Estoque6.160
600V
3A
3.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
250µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot STPSC406B-TR
STMicroelectronics

DIODE SCHOTTKY 600V 4A DPAK

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque292.560
600V
4A
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
200pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
-40°C ~ 175°C
RB068LAM-60TR
Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
pacote: SOD-128
Estoque27.150
60V
2A
680mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
2µA @ 60V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
SD103C-TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: -
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 10V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 125°C (Max)
pacote: DO-204AH, DO-35, Axial
Estoque216.498
20V
-
600mV @ 200mA
-
10ns
5µA @ 10V
50pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
hot MBR40250G
ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 250V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: TO-220-2
Estoque13.236
250V
40A
970mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 250V
500pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220-2
-65°C ~ 150°C
P600U
Diotec Semiconductor

DIODE P600 1400V 6A 175C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 175°C
pacote: -
Request a Quote
1400 V
6A
1.1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 1400 V
-
Through Hole
P600, Axial
P600
-50°C ~ 175°C
HER208-AP
Micro Commercial Co

DIODE GEN PURP 1KV 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Request a Quote
1000 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1000 V
30pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
JANS1N6663US-TR
Microchip Technology

DIODE GP 600V 500MA A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
600 V
500mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 175°C
SF16-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
pacote: -
Request a Quote
400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 400 V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C
1N4153UR
Microchip Technology

DIODE GP 50V 150MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 50 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 200°C
pacote: -
Request a Quote
50 V
150mA
880 mV @ 20 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
50 nA @ 50 V
2pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 200°C
RFUH20TB4SNZC9
Rohm Semiconductor

DIODE GEN PURP 430V 20A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 430 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C
pacote: -
Estoque2.973
430 V
20A
1.7 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 430 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C
BAV103-G
Fairchild Semiconductor

RECTIFIER DIODE, 0.2A, 250V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC07D60E6X1SA1
Infineon Technologies

DIODE GP 600V 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Request a Quote
600 V
15A
1.25 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
250 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
JANS1N5417US-TR
Microchip Technology

DIODE GEN PURP 200V 3A B SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
200 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 150 V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
STBR3008G2Y-TR
STMicroelectronics

DIODE GEN PURP 800V 30A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: -
Estoque2.844
800 V
30A
1.1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 800 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
S20140
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D650S12TXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 620A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 620A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.3 µs
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: -
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1200 V
620A
2.25 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
5.3 µs
20 mA @ 1200 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 150°C