Página 794 - Diodos - Retificadores - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDV06S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-220-2 Full Pack	Estoque6.640	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
ES1BHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AC, SMA	Estoque2.672	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
20TQ040	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7mA @ 40V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacote: TO-220-2	Estoque13.692	40V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 40V	1400pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SM75F	Semtech Corporation	DIODE GEN PURP 7.5KV 290MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 7500V Current - Average Rectified (Io): 290mA Voltage - Forward (Vf) (Max) @ If: 12V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 1µA @ 7500V Capacitance @ Vr, F: 3pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	pacote: Axial	Estoque6.768	7500V	290mA	12V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 7500V	3pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
VS-41HFR120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	pacote: DO-203AB, DO-5, Stud	Estoque5.920	1200V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
DSEP6-06BS	IXYS	DIODE GEN PURP 600V 6A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.66V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 5pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque3.888	600V	6A	2.66V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	50µA @ 600V	5pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
FESE16HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	pacote: TO-220-2	Estoque2.800	500V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	145pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SFS1601G MNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 50V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque4.320	50V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
AU2PK-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.3A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 29pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacote: TO-277, 3-PowerDFN	Estoque4.608	800V	1.3A (DC)	2.5V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	29pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SR309 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-201AD, Axial	Estoque2.032	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RGL34BHE3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-213AA (Glass)	Estoque5.568	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
CD214B-R3100	Bourns Inc.	DIODE GEN PURP 100V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-214AA, SMB	Estoque4.192	100V	3A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C
FR3BTA	SMC Diode Solutions	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 150°C	pacote: DO-214AB, SMC	Estoque6.288	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 150°C
RSFJLHMTG	TSC America Inc.	DIODE, FAST, 0.5A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-219AB	Estoque3.824	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4003GHB0G	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, DO-20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-204AL, DO-41, Axial	Estoque5.936	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T2G A1G	TSC America Inc.	DIODE, 1A, 100V, TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	pacote: T-18, Axial	Estoque3.616	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
MBR8045R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 45V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-203AB, DO-5, Stud	Estoque5.952	45V	80A	650mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
CS3D-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 200V 2A DO-214AB SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 26pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AB, SMC	Estoque110.718	200V	2A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2.8µs	5µA @ 200V	26pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
UFM14PL-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	pacote: SOD-123F	Estoque240.000	400V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
BAV21W_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Estoque138.273	200 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
CRG05-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 1A S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	pacote: -	Estoque2.904	800 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
JAN1N5618US-TR	Microchip Technology	DIODE GEN PURP 600V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	pacote: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
V1FM10-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 1A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	pacote: -	Request a Quote	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	95pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
BYG10J-AQ	Diotec Semiconductor	DIODE SMA 600V 1.5A 150C AECQ101 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC, SMA Operating Temperature - Junction: -50°C ~ 150°C	pacote: -	Estoque22.500	600 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C
SR806-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Request a Quote	60 V	8A	700 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	380pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SS1H15LW	Taiwan Semiconductor Corporation	1A, 150V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Estoque43.614	150 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 150 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
GP10-4006-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	pacote: -	Request a Quote	800 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
HER104S-AP	Micro Commercial Co	DIODE GEN PURP 300V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 mA @ 300 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Request a Quote	300 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 mA @ 300 V	20pF @ 4V, 1MHz	Through Hole	Axial	A-405	-55°C ~ 125°C
JANTX1N5711UB	Microchip Technology	DIODE SCHOTTKY 50V UB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C	pacote: -	Request a Quote	50 V	-	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	-65°C ~ 150°C
RF071LAM4STR	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	pacote: -	Estoque18	400 V	1A	1.25 V @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)

IDV06S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 600V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-220-2 Full Pack

Estoque6.640

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

80µA @ 600V

280pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

ES1BHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AC, SMA

Estoque2.672

100V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 100V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

20TQ040

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 20A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7mA @ 40V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-220-2

Estoque13.692

40V

20A

570mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.7mA @ 40V

1400pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SM75F

Semtech Corporation

DIODE GEN PURP 7.5KV 290MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 7500V
Current - Average Rectified (Io): 290mA
Voltage - Forward (Vf) (Max) @ If: 12V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 1µA @ 7500V
Capacitance @ Vr, F: 3pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

pacote: Axial

Estoque6.768

7500V

290mA

12V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

1µA @ 7500V

3pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

VS-41HFR120

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C

pacote: DO-203AB, DO-5, Stud

Estoque5.920

1200V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 1200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 190°C

DSEP6-06BS

IXYS

DIODE GEN PURP 600V 6A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.66V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque3.888

600V

6A

2.66V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

50µA @ 600V

5pF @ 400V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

FESE16HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

pacote: TO-220-2

Estoque2.800

500V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

145pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

SFS1601G MNG

TSC America Inc.

DIODE, SUPER FAST, 16A, 50V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque4.320

50V

16A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

AU2PK-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.3A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacote: TO-277, 3-PowerDFN

Estoque4.608

800V

1.3A (DC)

2.5V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

29pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SR309 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-201AD, Axial

Estoque2.032

90V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RGL34BHE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-213AA (Glass)

Estoque5.568

100V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

CD214B-R3100

Bourns Inc.

DIODE GEN PURP 100V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-214AA, SMB

Estoque4.192

100V

3A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 100V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 175°C

FR3BTA

SMC Diode Solutions

DIODE GEN PURP 100V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-214AB, SMC

Estoque6.288

100V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 150°C

RSFJLHMTG

TSC America Inc.

DIODE, FAST, 0.5A, 600V, 250NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-219AB

Estoque3.824

600V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4003GHB0G

TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, DO-20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-204AL, DO-41, Axial

Estoque5.936

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1T2G A1G

TSC America Inc.

DIODE, 1A, 100V, TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

pacote: T-18, Axial

Estoque3.616

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

MBR8045R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-203AB, DO-5, Stud

Estoque5.952

45V

80A

650mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

CS3D-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 200V 2A DO-214AB SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AB, SMC

Estoque110.718

200V

2A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2.8µs

5µA @ 200V

26pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

UFM14PL-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

pacote: SOD-123F

Estoque240.000

400V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

BAV21W_R1_00001

Panjit International Inc.

DIODE GEN PURP 200V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Estoque138.273

200 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

CRG05-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

pacote: -

Estoque2.904

800 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

JAN1N5618US-TR

Microchip Technology

DIODE GEN PURP 600V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

pacote: -

Request a Quote

600 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 600 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

V1FM10-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C

pacote: -

Request a Quote

100 V

1A

770 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

95pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-40°C ~ 175°C

BYG10J-AQ

Diotec Semiconductor

DIODE SMA 600V 1.5A 150C AECQ101

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC, SMA
Operating Temperature - Junction: -50°C ~ 150°C

pacote: -

Estoque22.500

600 V

1.5A

1.15 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 600 V

-

Surface Mount

DO-214AC, SMA

-50°C ~ 150°C

SR806-AP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

pacote: -

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60 V

8A

700 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

380pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SS1H15LW

Taiwan Semiconductor Corporation

1A, 150V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

Estoque43.614

150 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 150 V

-

Surface Mount

SOD-123W

-55°C ~ 175°C

GP10-4006-E3-54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

pacote: -

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800 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

HER104S-AP

Micro Commercial Co

DIODE GEN PURP 300V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 mA @ 300 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C

pacote: -

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300 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 mA @ 300 V

20pF @ 4V, 1MHz

Through Hole

Axial

A-405

-55°C ~ 125°C

JANTX1N5711UB

Microchip Technology

DIODE SCHOTTKY 50V UB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

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50 V

-

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

4-SMD, No Lead

UB

-65°C ~ 150°C

RF071LAM4STR

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

pacote: -

Estoque18

400 V

1A

1.25 V @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 400 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)