Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO-204AL
|
pacote: - |
Estoque2.064 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacote: DO-204AH, DO-35, Axial |
Estoque5.296 |
|
75V | 200mA | 1.2V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20
|
pacote: DO-201AA, DO-27, Axial |
Estoque7.856 |
|
400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20
|
pacote: DO-201AA, DO-27, Axial |
Estoque6.160 |
|
200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD
|
pacote: DO-201AD, Axial |
Estoque2.944 |
|
200V | 3A | 1.25V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 750ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
||
Rohm Semiconductor |
DIODE GEN PURP 600V 1A MSR
|
pacote: DO-41 Mini, Axial |
Estoque7.520 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 30A ITO220AB
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque4.944 |
|
120V | 30A | 1.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 20A,
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.592 |
|
100V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC
|
pacote: TO-220-2 |
Estoque3.248 |
|
35V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 30V DO-214AA
|
pacote: DO-214AA, SMB |
Estoque7.168 |
|
30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
||
Bourns Inc. |
DIODE GEN PURP 400V 3A SMB
|
pacote: DO-214AA, SMB |
Estoque5.232 |
|
400V | 3A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 150°C |
||
Comchip Technology |
DIODE SCHOTTKY 60V 1A DO214AC
|
pacote: DO-214AC, SMA |
Estoque2.672 |
|
60V | 1A (DC) | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 1
|
pacote: DO-219AB |
Estoque2.864 |
|
100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 5
|
pacote: DO-214AA, SMB |
Estoque2.352 |
|
50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 800V,
|
pacote: DO-219AB |
Estoque4.752 |
|
800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Fairchild/ON Semiconductor |
DIODE FAST 1000V 1.2A SOD-123HE
|
pacote: SOD-123H |
Estoque7.024 |
|
1000V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | 18pF @ 0V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
||
NTE Electronics, Inc |
DIODE GP 1.2KV 3000A DO200AC
|
pacote: - |
Request a Quote |
|
1200 V | 3000A | 1.41 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 mA @ 1200 V | - | Clamp On | DO-200AC, K-PUK | DO-200AC | -40°C ~ 180°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDU
|
pacote: - |
Estoque7.854 |
|
30 V | 1.5A | 490 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
||
Taiwan Semiconductor Corporation |
250NS, 2A, 600V, FAST RECOVERY R
|
pacote: - |
Estoque84.000 |
|
600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 200 V | 11pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 40V 700MA SOT23-3
|
pacote: - |
Request a Quote |
|
40 V | 700mA | 530 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 3 ns | 10 µA @ 30 V | 16pF @ 30V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C |
||
Wolfspeed, Inc. |
DIODE SIL CARB 1.7KV 33A TO247-2
|
pacote: - |
Request a Quote |
|
1700 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 830pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 200V 1A D-5A
|
pacote: - |
Request a Quote |
|
200 V | 1A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 200 V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 70V 200MA SOT323
|
pacote: - |
Estoque5.850 |
|
70 V | 200mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 70 V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO204AC
|
pacote: - |
Request a Quote |
|
50 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SOD128
|
pacote: - |
Estoque71.250 |
|
100 V | 1A | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | 19pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
5A, 60V SLIMSMA TRENCH SKY RECT.
|
pacote: - |
Estoque21.000 |
|
60 V | 2.6A | 660 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 60 V | 700pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 200V 3A
|
pacote: - |
Request a Quote |
|
200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 50V 5A DO201AD
|
pacote: - |
Request a Quote |
|
50 V | 5A | 960 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |