Página 1831 - Diodos - Retificadores - Simples | Produtos semicondutores discretos | Heisener Electronics
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Diodos - Retificadores - Simples

Registros 52.788
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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP10D-5310M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Estoque2.064
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N914
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: DO-204AH, DO-35, Axial
Estoque5.296
75V
200mA
1.2V @ 50mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
2.8pF @ 1.5V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 175°C
RGP20G-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: DO-201AA, DO-27, Axial
Estoque7.856
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: DO-201AA, DO-27, Axial
Estoque6.160
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
GI912-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 750ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
pacote: DO-201AD, Axial
Estoque2.944
200V
3A
1.25V @ 3A
Standard Recovery >500ns, > 200mA (Io)
750ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
1SR139-600T-32
Rohm Semiconductor

DIODE GEN PURP 600V 1A MSR

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-41 Mini, Axial
  • Supplier Device Package: MSR
  • Operating Temperature - Junction: 150°C (Max)
pacote: DO-41 Mini, Axial
Estoque7.520
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
DO-41 Mini, Axial
MSR
150°C (Max)
hot VF30120S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A ITO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque4.944
120V
30A
1.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 150°C
SRAS20100 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.592
100V
20A
920mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
VS-MBR735PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: TO-220-2
Estoque3.248
35V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
SL23-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 30V DO-214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 125°C
pacote: DO-214AA, SMB
Estoque7.168
30V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 125°C
CD214B-F3400
Bourns Inc.

DIODE GEN PURP 400V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AA, SMB
Estoque5.232
400V
3A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
CDBA160SLR-HF
Comchip Technology

DIODE SCHOTTKY 60V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacote: DO-214AC, SMA
Estoque2.672
60V
1A (DC)
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
120pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
SS310LHRHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-219AB
Estoque2.864
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SK15B M4G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-214AA, SMB
Estoque2.352
50V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS1KL RQG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-219AB
Estoque4.752
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1MFP
Fairchild/ON Semiconductor

DIODE FAST 1000V 1.2A SOD-123HE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 18pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: SOD-123H
Estoque7.024
1000V
1.2A
1.3V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 1000V
18pF @ 0V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
NTE6118
NTE Electronics, Inc

DIODE GP 1.2KV 3000A DO200AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 3000A
  • Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: DO-200AC
  • Operating Temperature - Junction: -40°C ~ 180°C
pacote: -
Request a Quote
1200 V
3000A
1.41 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 mA @ 1200 V
-
Clamp On
DO-200AC, K-PUK
DO-200AC
-40°C ~ 180°C
RB070MM-30TFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1.5A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
pacote: -
Estoque7.854
30 V
1.5A
490 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RS2JFSH
Taiwan Semiconductor Corporation

250NS, 2A, 600V, FAST RECOVERY R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Estoque84.000
600 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
1 µA @ 200 V
11pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
ZLLS500TA-79
Diodes Incorporated

DIODE SCHOTTKY 40V 700MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 30 V
  • Capacitance @ Vr, F: 16pF @ 30V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 150°C
pacote: -
Request a Quote
40 V
700mA
530 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
10 µA @ 30 V
16pF @ 30V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C
C5D10170H
Wolfspeed, Inc.

DIODE SIL CARB 1.7KV 33A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 33A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
  • Capacitance @ Vr, F: 830pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Request a Quote
1700 V
33A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1700 V
830pF @ 0V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
JAN1N5615US-TR
Microchip Technology

DIODE GEN PURP 200V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 200°C
pacote: -
Request a Quote
200 V
1A
800 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
500 µA @ 200 V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
BAS70W_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 70V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 70 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: 150°C
pacote: -
Estoque5.850
70 V
200mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 70 V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
150°C
FR151G
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Request a Quote
50 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
PU1BFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque71.250
100 V
1A
930 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 100 V
19pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 175°C
VSSAF5M63HM3-H
Vishay General Semiconductor - Diodes Division

5A, 60V SLIMSMA TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2.6A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 60 V
  • Capacitance @ Vr, F: 700pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: -
Estoque21.000
60 V
2.6A
660 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 60 V
700pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 175°C
JAN1N5417-TR
Microchip Technology

DIODE GEN PURP 200V 3A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
200 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 200 V
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
EGP51A-E3-D
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 117pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
50 V
5A
960 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 50 V
117pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C