Página 1791 - Diodos - Retificadores - Simples | Produtos semicondutores discretos | Heisener Electronics
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Diodos - Retificadores - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CDBM280-G
Comchip Technology

DIODE SCHOTTKY 80V 2A MINISMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 80V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: Mini SMA/SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: SOD-123T
Estoque3.440
80V
2A (DC)
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 80V
160pF @ 4V, 1MHz
Surface Mount
SOD-123T
Mini SMA/SOD-123
-55°C ~ 150°C
BYS459B-1500SE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 10A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 220ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.016
1500V
10A
1.35V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
220ns
250µA @ 1500V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
QRS1260T30
Powerex Inc.

DIODE MODULE 1.2KV 427A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 427A
  • Voltage - Forward (Vf) (Max) @ If: 3.5V @ 600A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 2mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
pacote: Module
Estoque6.384
1200V
427A
3.5V @ 600A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
2mA @ 1200V
-
Chassis Mount
Module
Module
-
SS12-E3/1T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 125°C
pacote: DO-214AC, SMA
Estoque6.528
20V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 125°C
D452N16E
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 1200V 710A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Estoque3.216
-
-
-
-
-
-
-
-
-
-
-
LS412060
Powerex Inc.

DIODE MODULE 2KV 600A POW-R-BLOK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK? Module
  • Supplier Device Package: POW-R-BLOK? Module
  • Operating Temperature - Junction: -
pacote: POW-R-BLOK? Module
Estoque5.056
2000V
600A
1.19V @ 1800A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 2000V
-
Chassis Mount
POW-R-BLOK? Module
POW-R-BLOK? Module
-
R7000403XXUA
Powerex Inc.

DIODE GEN PURP 400V 300A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9µs
  • Current - Reverse Leakage @ Vr: 50mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 200°C
pacote: DO-200AA, A-PUK
Estoque4.768
400V
300A
2.15V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
9µs
50mA @ 400V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 200°C
MURH10040
GeneSiC Semiconductor

DIODE MODULE 400V 100A D-67

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacote: D-67
Estoque7.936
400V
100A
1.3V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
25µA @ 50V
-
Chassis Mount
D-67
D-67
-
NTSB30100S-1G
ON Semiconductor

DIODE SCHOTTKY 100V 30A I2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque5.648
100V
30A
950mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
I2PAK (TO-262)
-40°C ~ 150°C
hot UH1PC-M3/84A
Vishay Semiconductor Diodes Division

DIODE 1A 150V 25NS SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: DO-220AA
Estoque72.000
150V
1A
1.05V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
HER152G R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 100

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-204AC, DO-15, Axial
Estoque2.080
100V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RSFJL MHG
TSC America Inc.

DIODE, FAST, 0.5A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: DO-219AB
Estoque3.216
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
PR6002-T
Diodes Incorporated

DIODE GEN PURP 100V 6A R6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -65°C ~ 150°C
pacote: R6, Axial
Estoque12.840
100V
6A
1.2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
140pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-65°C ~ 150°C
BYV27-100-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A SOD57

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: SOD-57, Axial
Estoque6.640
100V
2A
1.07V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
DB2J30900L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.3ns
  • Current - Reverse Leakage @ Vr: 2µA @ 30V
  • Capacitance @ Vr, F: 3pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SMini2-F5-B
  • Operating Temperature - Junction: 125°C (Max)
pacote: SC-90, SOD-323F
Estoque109.806
30V
100mA
580mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1.3ns
2µA @ 30V
3pF @ 10V, 1MHz
Surface Mount
SC-90, SOD-323F
SMini2-F5-B
125°C (Max)
V12PM103-M3-I
Vishay

12A, 100V, SMPC TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 4.4A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 380 µA @ 100 V
  • Capacitance @ Vr, F: 1910pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
pacote: -
Estoque19.500
100 V
4.4A
670 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
380 µA @ 100 V
1910pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
1N4148W-HE3_A-08
Vishay

SWITCHING DIODE GENPURP SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C
pacote: -
Request a Quote
75 V
250mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
100 µA @ 100 V
-
Surface Mount
SOD-123
SOD-123
150°C
R20120
Microchip Technology

RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacote: -
Request a Quote
1200 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
JANTX1N6658
Microchip Technology

DIODE GEN PURP 150V 15A TO254

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 150pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
150 V
15A
1.2 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 150 V
150pF @ 10V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-
MUR560J
WeEn Semiconductors

DIODE GEN PURP 600V 5A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 64 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: 175°C (Max)
pacote: -
Estoque52.014
600 V
5A
1.35 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
64 ns
3 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
SMC
175°C (Max)
SS22LH
Taiwan Semiconductor Corporation

2A, 20V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
pacote: -
Request a Quote
20 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 20 V
-
Surface Mount
SOD-123
Sub SMA
-55°C ~ 125°C
VS-E5TH2106S2L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 20A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 39 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacote: -
Estoque4.800
600 V
20A
1.68 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
39 ns
10 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
CMR3U-04M-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 400V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacote: -
Request a Quote
400 V
3A
1.25 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 400 V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
SBM250L_AY_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 2A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 50 V
  • Capacitance @ Vr, F: 125pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
pacote: -
Request a Quote
50 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 50 V
125pF @ 0V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
PCFF30S60W
onsemi

DIODE SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacote: -
Request a Quote
-
-
-
-
-
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STPS2170AFN
STMicroelectronics

DIODE SCHOTTKY 170V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.8 µA @ 170 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 175°C
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170 V
2A
820 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.8 µA @ 170 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
175°C
S4210F
Microchip Technology

RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
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100 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
RFV5BGE6STL
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252GE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
  • Operating Temperature - Junction: 150°C
pacote: -
Estoque7.470
600 V
5A
2.8 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
10 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252GE
150°C