Página 1669 - Diodos - Retificadores - Simples | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N647-1	Microsemi Corporation	DIODE GEN PURP 400V 400MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-204AH, DO-35, Axial	Estoque3.856	400V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 400V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
RS2DHE3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-214AA, SMB	Estoque6.240	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR7040	GeneSiC Semiconductor	DIODE GEN PURP 400V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-203AB, DO-5, Stud	Estoque2.256	400V	70A	1.3V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
HSM380J/TR13	Microsemi Corporation	DIODE SCHOTTKY 80V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	pacote: DO-214AB, SMC	Estoque3.440	80V	3A	810mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
SF1005G C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 300V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacote: TO-220-3	Estoque5.504	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SR1204 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 12A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	pacote: DO-201AD, Axial	Estoque3.456	40V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
SS3P5LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: TO-277, 3-PowerDFN	Estoque4.480	50V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SB130-B	Diodes Incorporated	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	pacote: DO-204AL, DO-41, Axial	Estoque3.856	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
HER205G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	pacote: DO-204AC, DO-15, Axial	Estoque4.672	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CD214B-B140LF	Bourns Inc.	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	pacote: DO-214AA, SMB	Estoque4.240	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
SS13HM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	pacote: DO-214AC, SMA	Estoque3.360	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
FMX-G26S	Sanken	DIODE GEN PURP 600V 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -40°C ~ 150°C	pacote: TO-220-2 Full Pack	Estoque16.704	600V	10A	1.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-40°C ~ 150°C
D4015L	Littelfuse Inc.	DIODE GEN PURP 400V 9.5A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 9.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	pacote: TO-220-3 Isolated Tab	Estoque6.944	400V	9.5A	1.6V @ 9.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 400V	-	Through Hole	TO-220-3 Isolated Tab	TO-220 Isolated Tab	-40°C ~ 125°C
RGL41G-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacote: DO-213AB, MELF (Glass)	Estoque2.848	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SJPX-F2VR	Sanken	DIODE GEN PURP 200V 1.5A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	pacote: 2-SMD, J-Lead	Estoque54.606	200V	1.5A	980mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
CDBQR0140R	Comchip Technology	DIODE SCHOTTKY 40V 100MA 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	pacote: 0402 (1005 Metric)	Estoque44.442	40V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
SBR2U30P1-7	Diodes Incorporated	DIODE SBR 30V 2A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	pacote: POWERDI?123	Estoque488.700	30V	2A	400mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
ER1QG-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -50°C ~ 150°C	pacote: -	Request a Quote	1200 V	1A	1.85 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 1200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-50°C ~ 150°C
S4310	Microchip Technology	DIODE GEN PURP 100V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacote: -	Request a Quote	100 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SE60N3GHM3-I	Vishay	6A, 400V, STD , SM RECT,DFN33A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: DFN33A Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Request a Quote	400 V	6A	1.05 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	8-PowerVDFN	DFN33A	-55°C ~ 175°C
MSASC150W45LS-TR	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	45 V	150A	760 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C
S3KC-HF	Comchip Technology	DIODE GEN PURP 800V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	800 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MURS1G-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacote: -	Request a Quote	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
JANTX1N6874UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
AS3BG-M3-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 400V 3A DO214AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	pacote: -	Request a Quote	400 V	3A	1.05 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
PMEG4020ER-QX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C	pacote: -	Estoque24.306	40 V	2A	490 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	250pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	150°C
RBR3MM30ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	pacote: -	Estoque26.313	30 V	3A	510 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
G12U50F4	Diodes Incorporated	DIODE SCHOTTKY 50V 12A F4 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

JANTXV1N647-1

Microsemi Corporation

DIODE GEN PURP 400V 400MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-204AH, DO-35, Axial

Estoque3.856

400V

400mA

1V @ 400mA

Standard Recovery >500ns, > 200mA (Io)

-

50nA @ 400V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

RS2DHE3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AA, SMB

Estoque6.240

200V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

MUR7040

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-203AB, DO-5, Stud

Estoque2.256

400V

70A

1.3V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

HSM380J/TR13

Microsemi Corporation

DIODE SCHOTTKY 80V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

pacote: DO-214AB, SMC

Estoque3.440

80V

3A

810mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 80V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

SF1005G C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 300V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-220-3

Estoque5.504

300V

10A

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

50pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

SR1204 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

pacote: DO-201AD, Axial

Estoque3.456

40V

12A

550mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

SS3P5LHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: TO-277, 3-PowerDFN

Estoque4.480

50V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 50V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

SB130-B

Diodes Incorporated

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

pacote: DO-204AL, DO-41, Axial

Estoque3.856

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

HER205G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-204AC, DO-15, Axial

Estoque4.672

400V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

35pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

CD214B-B140LF

Bourns Inc.

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C

pacote: DO-214AA, SMB

Estoque4.240

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

110pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 125°C

SS13HM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

pacote: DO-214AC, SMA

Estoque3.360

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

FMX-G26S

Sanken

DIODE GEN PURP 600V 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C

pacote: TO-220-2 Full Pack

Estoque16.704

600V

10A

1.5V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-40°C ~ 150°C

D4015L

Littelfuse Inc.

DIODE GEN PURP 400V 9.5A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 9.5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
Operating Temperature - Junction: -40°C ~ 125°C

pacote: TO-220-3 Isolated Tab

Estoque6.944

400V

9.5A

1.6V @ 9.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

10µA @ 400V

-

Through Hole

TO-220-3 Isolated Tab

TO-220 Isolated Tab

-40°C ~ 125°C

RGL41G-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-213AB, MELF (Glass)

Estoque2.848

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SJPX-F2VR

Sanken

DIODE GEN PURP 200V 1.5A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

pacote: 2-SMD, J-Lead

Estoque54.606

200V

1.5A

980mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

CDBQR0140R

Comchip Technology

DIODE SCHOTTKY 40V 100MA 0402

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402/SOD-923F
Operating Temperature - Junction: 125°C (Max)

pacote: 0402 (1005 Metric)

Estoque44.442

40V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

6pF @ 10V, 1MHz

Surface Mount

0402 (1005 Metric)

0402/SOD-923F

125°C (Max)

SBR2U30P1-7

Diodes Incorporated

DIODE SBR 30V 2A POWERDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

pacote: POWERDI?123

Estoque488.700

30V

2A

400mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

POWERDI?123

PowerDI? 123

-65°C ~ 150°C

ER1QG-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -50°C ~ 150°C

pacote: -

Request a Quote

1200 V

1A

1.85 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 1200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-50°C ~ 150°C

S4310

Microchip Technology

DIODE GEN PURP 100V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacote: -

Request a Quote

100 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

SE60N3GHM3-I

Vishay

6A, 400V, STD , SM RECT,DFN33A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: DFN33A
Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

Request a Quote

400 V

6A

1.05 V @ 6 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

8-PowerVDFN

DFN33A

-55°C ~ 175°C

MSASC150W45LS-TR

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

45 V

150A

760 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 150°C

S3KC-HF

Comchip Technology

DIODE GEN PURP 800V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

800 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MURS1G-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

Request a Quote

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 400 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

JANTX1N6874UTK2-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-

AS3BG-M3-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 400V 3A DO214AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

Request a Quote

400 V

3A

1.05 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

PMEG4020ER-QX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 2A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C

pacote: -

Estoque24.306

40 V

2A

490 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

250pF @ 1V, 1MHz

Surface Mount

SOD-123W

150°C

RBR3MM30ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

pacote: -

Estoque26.313

30 V

3A

510 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

G12U50F4

Diodes Incorporated

DIODE SCHOTTKY 50V 12A F4

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacote: -

Request a Quote

-