Diodes Incorporated Produtos

ZVN2106ASTZ

Diodes Incorporated

MOSFET N-CH 60V 0.45A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

pacote: E-Line-3

DMP4025LSS-13

Diodes Incorporated

MOSFET P-CH 40V 6A 8-SO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.52W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

DMP32D9UFZ-7B

Diodes Incorporated

MOSFET P-CH 30V 0.2A X2-DFN0606

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 22.5pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 390mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0606-3
• Package / Case: 3-XFDFN

pacote: 3-XFDFN

DMG6301UDW-13

Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 240mA
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacote: 6-TSSOP, SC-88, SOT-363

ZTX690BSTOA

Diodes Incorporated

TRANS NPN 45V 2A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

pacote: E-Line-3, Formed Leads

BC817-40-7

Diodes Incorporated

TRANS NPN 45V 0.8A SMD SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 310mW
• Frequency - Transition: 100MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

FZT692BTA

Diodes Incorporated

TRANS NPN 70V 2A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 70V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacote: TO-261-4, TO-261AA

DDTC122TE-7-F

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 220
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

pacote: SOT-523

MMBTH10-7

Diodes Incorporated

TRANS NPN VHF/UHF 25V SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

ZDT605TC

Diodes Incorporated

TRANS 2NPN DARL 120V 1A SM8

• Transistor Type: 2 NPN Darlington (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
• Power - Max: 2.75W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

pacote: SOT-223-8

BZX84C5V1W-7

Diodes Incorporated

DIODE ZENER 5.1V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacote: SC-70, SOT-323

RS1JDFQ-13

Diodes Incorporated

DIODE GEN PURP 600V 1A DFLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: 2-SMD, Flat Lead

SBL1045CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

GBPC2508W

Diodes Incorporated

RECT BRIDGE GPP 800V 25A GBPCW

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

AZ7500CP-E1

Diodes Incorporated

IC REG CTRLR BUCK 16DIP

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 7 V ~ 36 V
• Frequency - Switching: 1kHz ~ 200kHz
• Duty Cycle (Max): 45%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

pacote: 16-DIP (0.300", 7.62mm)

74LVC32AS14-13

Diodes Incorporated

IC GATE OR 4CH 2-INP 14-SO

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4.1ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacote: 14-SOIC (0.154", 3.90mm Width)

PI74FCT16244ATAEX

Diodes Incorporated

IC BUFF/DVR 16BIT N-INV 48TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

pacote: 48-TFSOP (0.240", 6.10mm Width)

PI6C2405A-1HLE-2017

Diodes Incorporated

CLOCK BUFFER TSSOP-8

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PI49FCT32802QEX

Diodes Incorporated

IC CLK BUFFER 1:5 133MHZ 16QSOP

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:5
• Differential - Input:Output: No/No
• Input: CMOS, TTL
• Output: CMOS, TTL
• Frequency - Max: 133MHz
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

pacote: 16-SSOP (0.154", 3.90mm Width)

AH1802-FY4G-7

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 3DFN

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±4mT Trip, ±1mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.5 V ~ 5.5 V
• Current - Supply (Max): 16µA
• Current - Output (Max): -
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-XFDFN
• Supplier Device Package: DFN2015H4-3

pacote: 3-XFDFN

PT7C5066FAD261332-2WF

Diodes Incorporated

XO CLOCK

• Logic Type: -
• Supply Voltage: -
• Number of Bits: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PI3HDX1204DZHEX

Diodes Incorporated

ACTIVE HDMI V-QFN3590-42 T&R 3.5

• Applications: Desktop, HDMI Redriver, Laptops, Set-Top Boxes
• Interface: HDMI
• Voltage - Supply: 3V ~ 3.6V
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)
• Mounting Type: Surface Mount

pacote: -

DMN12M3UCA6-7

Diodes Incorporated

MOSFET 2N-CH 14V X4-DSN3118-6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 14V
• Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta)
• Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 1.41mA
• Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 4593pF @ 10V
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: X4-DSN3118-6

pacote: -

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STPR1240

Diodes Incorporated

DIODE ARRAY GP 400V 6A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO220AB (Type WX)

pacote: -

AP62301Z6-7

Diodes Incorporated

IC REG BUCK ADJ 3A SOT563

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.2V
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 7V
• Current - Output: 3A
• Frequency - Switching: 750kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

pacote: -

AP3845CP-E1

Diodes Incorporated

IC OFFLINE SWITCH 8DIP

• Output Isolation: Non-Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: 8.4 V
• Voltage - Supply (Vcc/Vdd): 7.6V
• Duty Cycle: 48%
• Frequency - Switching: 52kHz
• Power (Watts): 1 W
• Fault Protection: Current Limiting, Over Load, Over Temperature
• Control Features: Frequency Control
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP
• Mounting Type: Through Hole

pacote: -

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DMN2055U-13

Diodes Incorporated

MOSFET N-CH 20V 4.8A SOT23 T&R 1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: -

DMTH6006SPS-13

Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.94W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

pacote: -

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