Diodes Incorporated Produtos

FNC500135

Diodes Incorporated

OSC XO 125.004MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 125.004MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 1.8V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 40mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

pacote: 4-SMD, No Lead

ZXMN3A06DN8TC

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
• Power - Max: 1.8W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

DMN3055LFDB-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

• FET Type: 2 N-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

pacote: 6-UDFN Exposed Pad

2DD1664Q-13

Diodes Incorporated

TRANS NPN 32V 1A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 1W
• Frequency - Transition: 280MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacote: TO-243AA

MMST4403-7-F

Diodes Incorporated

TRANS PNP 40V 0.6A SC70-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacote: SC-70, SOT-323

MBR1660

Diodes Incorporated

DIODE SCHOTTKY 60V 16A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 450pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: TO-220-2

LL4154-7

Diodes Incorporated

DIODE GEN 25V 150MA MINI MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 25V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 25V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -65°C ~ 175°C

pacote: DO-213AC, MINI-MELF, SOD-80

B1100-13-F

Diodes Incorporated

DIODE SCHOTTKY 100V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-214AC, SMA

US1J-13-F

Diodes Incorporated

DIODE GEN PURP 600V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-214AC, SMA

MBR2045CTP

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V ITO220S

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: ITO-220S

pacote: TO-220-3 Isolated Tab

AP2127N-1.0TRG1

Diodes Incorporated

IC REG LINEAR 300MA SOT23

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

ZR431LC02STOB

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 10V
• Current - Output: 25mA
• Tolerance: ±2.5%
• Temperature Coefficient: 50ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 100µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

PT7M6126NLTA3EX

Diodes Incorporated

IC SUPERVSOR 2.6V SOT23-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 200 µs Maximum
• Voltage - Threshold: 2.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

AP2820DMMTR-G1

Diodes Incorporated

IC USB POWER SWITCH 8-MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AS358AMTR-E1

Diodes Incorporated

IC OPAMP GEN PURP 8-SO

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 20nA
• Voltage - Input Offset: 2mV
• Current - Supply: 700µA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 36 V, ±1.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

PI90LVB022L

Diodes Incorporated

IC MULTIPLEXER LVDS 1CH 16TSSOP

• Type: Buffer, Multiplexer
• Applications: LVDS
• Input: LVDS
• Output: LVDS
• Data Rate (Max): 650Mbps
• Number of Channels: 1 x 2:2
• Delay Time: 4.0ns
• Signal Conditioning: -
• Capacitance - Input: 8pF
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 21mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacote: 16-TSSOP (0.173", 4.40mm Width)

PI3EQX8908A1ZFE

Diodes Incorporated

IC REDRIVER 8-CHAN PCIE3.0 54TQF

• Type: Buffer, ReDriver
• Applications: PCIe
• Input: -
• Output: -
• Data Rate (Max): 8Gbps
• Number of Channels: 8
• Delay Time: -
• Signal Conditioning: Input Equalization, Output De-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 54-WFQFN Exposed Pad
• Supplier Device Package: 54-TQFN (10x5.5)

pacote: 54-WFQFN Exposed Pad

AP2401B14KTR-E1

Diodes Incorporated

IC CURRENT LIMIT SWITCH

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

AP7354-28FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): 0.6µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

pacote: 4-XDFN Exposed Pad

ZXCT213CDSJ-7

Diodes Incorporated

CM VOLTAGE OUTPUT U-QFN1418-10 T

• Function: Current Monitor
• Sensing Method: High/Low-Side
• Accuracy: ±0.5%
• Voltage - Input: 2.7V ~ 26V
• Current - Output: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-UFQFN
• Supplier Device Package: U-QFN1418-10

pacote: -

UMC5NQ-7

Diodes Incorporated

PREBIASTRANSISTORSOT353

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SOT-353

pacote: -

DMN3009LFVQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

pacote: -

Request a Quote

DMC62D2SV-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
• Power - Max: 500mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

pacote: -

Request a Quote

AP7361EA-33ER-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): 91 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223R

pacote: -

DMT6011LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 10.3A POWERDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
• Power - Max: 2.5W (Ta), 37.9W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type UXD)

pacote: -

Request a Quote

74AHCT1G00QSE-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP SOT353

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5V ~ 5.5V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-353
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacote: -

S1MSWFMQ-7

Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

DMT10H009LCG-7

Diodes Incorporated

MOSFET N-CH 100V 12.4A/47A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3333-8 (Type B)
• Package / Case: 8-PowerVDFN

pacote: -