Diodes Incorporated Produtos

WT3253I0026.000000

Diodes Incorporated

OSC TCXO 26.000MHZ CLP SNWV SMD

• Type: TCXO
• Frequency: 26MHz
• Function: -
• Output: Clipped Sine Wave
• Voltage - Supply: 1.8V
• Frequency Stability: ±2ppm
• Operating Temperature: -30°C ~ 85°C
• Current - Supply (Max): 1.5mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.047" (1.20mm)

pacote: 4-SMD, No Lead

FN3680009

Diodes Incorporated

OSCILLATOR XO 36.864MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 36.864MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 25mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

pacote: 4-SMD, No Lead

JX7011D0104.000000

Diodes Incorporated

OSC XO 104.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 104MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 45mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.079" (2.00mm)

pacote: 6-SMD, No Lead

ZXMN6A25G

Diodes Incorporated

MOSFET N-CH 60V 4.8A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

ZXMN2A03E6TA

Diodes Incorporated

MOSFET N-CH 20V 3.6A SOT-23-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6

pacote: SOT-23-6

DMC6040SSDQ-13

Diodes Incorporated

MOSFET N/P-CH 60V 5.1A 8SO

• FET Type: N and P-Channel Complementary
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V
• Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
• Power - Max: 1.24W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

DCP55-13

Diodes Incorporated

TRANS NPN 60V 1A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacote: TO-261-4, TO-261AA

ZTX751

Diodes Incorporated

TRANS PNP 60V 2A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: 1W
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

pacote: E-Line-3

DFLZ39Q-7

Diodes Incorporated

DIODE ZENER POWERDI123

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 30V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123

pacote: POWERDI?123

ZC836ATA

Diodes Incorporated

DIODE VAR CAP 100PF 25V SOT23-3

• Capacitance @ Vr, F: 110pF @ 2V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (Max): 25V
• Diode Type: Single
• Q @ Vr, F: 100 @ 3V, 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

GBJ3510-F

Diodes Incorporated

BRIDGE RECTIFIER GBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 3.6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

pacote: 4-SIP, GBJ

AZ39151D5-5.0TRE1

Diodes Incorporated

IC REG LINEAR 5V 1.5A TO252-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 13.5V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA ~ 34mA
• PSRR: 65dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: TO-252-5

pacote: TO-252-6, DPak (5 Leads + Tab)

AP7175SP-13

Diodes Incorporated

IC REG LINEAR POS ADJ 3A 8SO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 3.65V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 3.23V
• Voltage Dropout (Max): 0.42V @ 3A
• Current - Output: 3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.5mA
• PSRR: -
• Control Features: Enable, Power Good
• Protection Features: Over Current, Over Temperature, Power On Reset (POR), Short Circuit, Soft Start
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-SO-EP

pacote: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

AP7361-33E-13

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 65dB ~ 45dB (1kHz ~ 10kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacote: TO-261-4, TO-261AA

AP2820EMM-G1

Diodes Incorporated

IC USB POWER SWITCH 8MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

PI3EQX1002BZLEX

Diodes Incorporated

IC REDRIVER USB 3.1 GEN-2 30TQFN

• Type: Buffer, ReDriver
• Applications: USB
• Input: CML
• Output: CML
• Data Rate (Max): 10Gbps
• Number of Channels: 1
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3.3V
• Current - Supply: -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: -
• Package / Case: 30-WFQFN Exposed Pad
• Supplier Device Package: 30-TQFN (2.5x4.5)

pacote: 30-WFQFN Exposed Pad

PI5USB2544AZHE

Diodes Incorporated

IC USB HOST CONTROLLER 16TQFN

• Applications: -
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: -
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PT7C5029C-5GWF

Diodes Incorporated

XOIC WAFER

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PI3USB3200ZBBEX

Diodes Incorporated

USB3 SWITCH V-QFN4525-20

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 3:2
• Switch Circuit: -
• Number of Channels: 3
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): 2.7V ~ 4V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 7GHz
• Features: USB 2.0, USB 3.1
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: 20-TQFN (2.5x4.5)

pacote: 20-VFQFN Exposed Pad

PI4GTL2002UEX

Diodes Incorporated

INTERFACE GTL 2.5K 8-MSOP

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 2
• Voltage - VCCA: -
• Voltage - VCCB: -
• Input Signal: -
• Output Signal: -
• Output Type: Open Drain
• Data Rate: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

BAS70LP-7B-79

Diodes Incorporated

DIODE SCHOTTKY 70V 70MA 2DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 70mA
• Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.6 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 70 V
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: X1-DFN1006-2
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: -

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DMN3066LVT-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 900mW
• Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: -

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ZXTN2005ZQTA

Diodes Incorporated

TRANS NPN 25V 5.5A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5.5 A
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A
• Current - Collector Cutoff (Max): 20nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
• Power - Max: 1.5 W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacote: -

DMP4009SPSW-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

pacote: -

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DMN1021UCA4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-TSN0808-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 690mW
• Rds On (Max) @ Id, Vgs: 21mOhm @ 1.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-TSN0808-4
• Package / Case: 4-XFDFN

pacote: -

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B260AE-13-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

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BZX84C36TQ-7-F

Diodes Incorporated

ZENER DIODE SOT523 T&R 3K

• Voltage - Zener (Nom) (Vz): 34 V
• Tolerance: ±2.94%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

pacote: -

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DMTH43M8LFG-13

Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

pacote: -

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