Diodes Incorporated Produtos

ZXM62P03E6TC

Diodes Incorporated

MOSFET P-CH 30V 1.5A SOT23-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 800mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-26
• Package / Case: SOT-23-6

pacote: SOT-23-6

ZVN2106ASTOB

Diodes Incorporated

MOSFET N-CH 60V 0.45A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

pacote: E-Line-3

DMN13H750S-13

Diodes Incorporated

MOSFET N-CH 130V 1A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 130V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 770mW (Ta)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

DMP6050SFG-7

Diodes Incorporated

MOSFET P-CH 60V 4.8A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

pacote: 8-PowerWDFN

DMN3730UFB-7

Diodes Incorporated

MOSFET N-CH 30V 750MA DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 470mW (Ta)
• Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN
• Package / Case: 3-UFDFN

pacote: 3-UFDFN

DMP2060UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.2A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

pacote: 6-UDFN Exposed Pad

DMG4932LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A 8SO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.5A
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
• Power - Max: 1.19W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

DMC3032LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.1A/7A 8SOP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

2DD2678-13

Diodes Incorporated

TRANS NPN 12V 3A SOT89-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 170MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacote: TO-243AA

DDTC143EUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

pacote: SC-70, SOT-323

ZMM5230B-7

Diodes Incorporated

DIODE ZENER 4.7V 500MW MINIMELF

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

pacote: DO-213AC, MINI-MELF, SOD-80

B340LB-13-G

Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Capacitance @ Vr, F: 180pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: DO-214AA, SMB

HER102-T

Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: DO-204AL, DO-41, Axial

MBR230S1F-7

Diodes Incorporated

DIODE SCHOTTKY 30V 2A SOD123F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 75pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 125°C

pacote: SOD-123F

MBR20150SCT-E1

Diodes Incorporated

DIODE SCHOTT 150V 10A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 150V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

pacote: TO-220-3

AS431HBZTR-G1

Diodes Incorporated

VREG SHUNT REGULATOR TO92

• Reference Type: -
• Output Type: -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Tolerance: -
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

APX809S00-40SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 1 ms Minimum
• Voltage - Threshold: 4V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

APX803L40-20SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 292 ms Minimum
• Voltage - Threshold: 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PT8A3304LWEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PI5USB30216BXUAEX

Diodes Incorporated

PLUG IN DETECTOR FOR TYPE C CONN

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

AZV358MTR-E1

Diodes Incorporated

IC OPAMP R-R DUAL LV GP 8-SOIC

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 1MHz
• -3db Bandwidth: -
• Current - Input Bias: 11nA
• Voltage - Input Offset: 1.7mV
• Current - Supply: 140µA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/Dual (±): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

KX31327009

Diodes Incorporated

CLOCK SAW OSCILLATOR SEAM3225

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

PI49FCT3807DHE

Diodes Incorporated

IC CLK BUFFER 1:10 156MHZ 20SSOP

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:10
• Differential - Input:Output: No/No
• Input: CMOS, TTL
• Output: CMOS, TTL
• Frequency - Max: 156MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

pacote: 20-SSOP (0.209", 5.30mm Width)

SMCJ120A-13-F

Diodes Incorporated

TVS DIODE 120VWM 193VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 7.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

pacote: DO-214AB, SMC

AP7343Q-29W5-7

Diodes Incorporated

LDO CMOS LOWCURR SOT25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.32V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 60µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

pacote: SC-74A, SOT-753

AS2376M8-13

Diodes Incorporated

OPAMP GENERAL PURPOSE MSOP-8 T&R

• Amplifier Type: Standard
• Number of Circuits: 2
• Output Type: Single Ended, Rail-to-Rail
• Slew Rate: 2V/µs
• Gain Bandwidth Product: 5.5 MHz
• -3db Bandwidth: -
• Current - Input Bias: 0.2 pA
• Voltage - Input Offset: 5 µV
• Current - Supply: 760µA (x2 Channels)
• Current - Output / Channel: 50 mA
• Voltage - Supply, Single/Dual (±): -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: -

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MUR460_E

Diodes Incorporated

DIODE GEN PURP 600V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

PI6CB33402ZHIEX-13R

Diodes Incorporated

IC CLK BUF 1:4 133.46MHZ 32TQFN

• Type: Clock Buffer
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: Yes/Yes
• Input: CMOS, HCSL
• Output: HCSL
• Frequency - Max: 133.46 MHz
• Voltage - Supply: 3.135V ~ 3.465V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

pacote: -

LZ52C3V3W

Diodes Incorporated

DIODE

• Voltage - Zener (Nom) (Vz): 3.3 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

pacote: -

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SBR20A45CTB-13-G

Diodes Incorporated

DIODE ARR SBR 45V 20A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 45 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacote: -

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