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Diodes Incorporated Produtos - PMIC - controladores de gateway

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGD21814S14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque3.696
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
1.9A, 2.3A
Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
DGD21084S14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque5.376
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.6V, 2.5V
200mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
DGD21844S14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.4A, 1.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque6.832
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
1.4A, 1.8A
Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
DGD21904S14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4.5A, 4.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque4.480
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4.5A, 4.5A
Non-Inverting
600V
25ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
DGD2118S8-13
Diodes Incorporated

IC GATE DRVR HIGH SIDE 8SO

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque3.968
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
290mA, 600mA
Non-Inverting
600V
75ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD2117S8-13
Diodes Incorporated

IC GATE DRVR HIGH SIDE 8SO

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.784
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
290mA, 600mA
Non-Inverting
600V
75ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DGD21064S14-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque2.048
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.6V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
DGD21042S8-13
Diodes Incorporated

IC GATE DVR HV 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.656
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
-
-
-
DGD21032S8-13
Diodes Incorporated

IC GATE DVR HV 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque2.048
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
-
-
-
ZXGD3001E6QTA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 12V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.3ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacote: SOT-23-6
Estoque5.664
Single
1
N-Channel MOSFET
12V (Max)
-
9A, 9A
Non-Inverting
-
7.3ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
ZXGD3003E6QTA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8.9ns, 8.9ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacote: SOT-23-6
Estoque5.984
Single
1
IGBT, N-Channel MOSFET
40V (Max)
-
5A, 5A
Non-Inverting
-
8.9ns, 8.9ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DGD2136S28-13
Diodes Incorporated

HV GATE DRIVER SO-28

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 90ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SO
pacote: 28-SOIC (0.295", 7.50mm Width)
Estoque5.344
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.4V
200mA, 350mA
Non-Inverting
600V
90ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SO
ZXGD3107N8TC
Diodes Incorporated

IC SYNCH MOSFET CNTLR 8SO

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 175ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque2.896
Single
1
N-Channel MOSFET
40V (Max)
-
2A, 7A
Non-Inverting
-
175ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ZXGD3006E6QTA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10A, 10A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacote: SOT-23-6
Estoque2.192
Single
1
IGBT, SiC MOSFET
40V (Max)
-
10A, 10A
Non-Inverting
-
48ns, 35ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
ZXGD3009DYTA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT363

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 210ns, 240ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque4.000
Single
1
N-Channel MOSFET
40V (Max)
-
2A, 2A
Non-Inverting
-
210ns, 240ns
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ZXGD3009E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 210ns, 240ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacote: SOT-23-6
Estoque2.240
Single
1
N-Channel MOSFET
40V (Max)
-
2A, 2A
Non-Inverting
-
210ns, 240ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DGD2110S16-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 16SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 15ns, 13ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque7.760
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
2.5A, 2.5A
Non-Inverting
500V
15ns, 13ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO
DGD2113S16-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 16SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 15ns, 13ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO
pacote: 16-SOIC (0.295", 7.50mm Width)
Estoque3.968
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
2.5A, 2.5A
Non-Inverting
600V
15ns, 13ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO
DGD2181S8-13
Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque3.888
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
1.9A, 2.3A
Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXGD3101T8TA
Diodes Incorporated

IC FLYBACK CONVERTER SM8

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 305ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
pacote: SOT-223-8
Estoque56.280
Single
1
N-Channel MOSFET
5 V ~ 15 V
-
2.5A, 2.5A
Non-Inverting
-
305ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8