Página 18 - Diodes Incorporated Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
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Diodes Incorporated Produtos - Transistores - FET, MOSFET - Simples

Registros 2.523
Página  18/91
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN2044UCB4-7
Diodes Incorporated

MOSFET N-CH 20V 3.3A U-WLB1010-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 720mW
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-WLB1010-4
  • Package / Case: 4-UFBGA, WLBGA
pacote: -
Estoque10.467
MOSFET (Metal Oxide)
20 V
3.3A (Ta)
1.5V, 4.5V
900mV @ 250µA
47 nC @ 8 V
1400 pF @ 10 V
±8V
-
720mW
40mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-WLB1010-4
4-UFBGA, WLBGA
DMTH4014LFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W
  • Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque3.795
MOSFET (Metal Oxide)
40 V
11.5A (Ta), 49.8A (Tc)
4.5V, 10V
3V @ 250µA
11.2 nC @ 10 V
750 pF @ 20 V
±20V
-
3.1W
13.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH10H2M2LPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6239 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
100 V
153A (Tc)
4.5V, 10V
2.5V @ 250µA
116 nC @ 10 V
6239 pF @ 50 V
±20V
-
4W (Ta), 150W (Tc)
4.2mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN62D2UT-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
pacote: -
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MOSFET (Metal Oxide)
60 V
334mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMTH10H010SCT
Diodes Incorporated

MOSFET N-CH 100V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: -
Estoque120
MOSFET (Metal Oxide)
100 V
100A (Ta)
10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
2.5W (Ta), 187W (Tc)
9.5mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
DMT12H7M9LPSW-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMTH6016LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
60 V
10.6A (Ta), 37.1A (Tc)
4.5V, 10V
2.5V @ 250µA
17 nC @ 10 V
864 pF @ 30 V
±20V
-
3W (Ta), 37.5W (Tc)
16mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH43M8LPSQ-13
Diodes Incorporated

MOSFET N-CH 40V 22A PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque35.040
MOSFET (Metal Oxide)
40 V
22A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
49 nC @ 10 V
3367 pF @ 20 V
±20V
-
2.7W (Ta)
3.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMP2070U-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 830mW
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque2.514
MOSFET (Metal Oxide)
20 V
4.6A (Tc)
1.8V, 4.5V
950mV @ 250µA
8.2 nC @ 10 V
118 pF @ 10 V
±8V
-
830mW
44mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN24H11DSQ-13
Diodes Incorporated

MOSFET N-CH 240V 270MA SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240 V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque30.000
MOSFET (Metal Oxide)
240 V
270mA (Ta)
4.5V, 10V
3V @ 250µA
3.7 nC @ 10 V
76.8 pF @ 25 V
±20V
-
750mW (Ta)
11Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP2160UWQ-7
Diodes Incorporated

MOSFET P-CH 20V 1.5A SOT323 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 627 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
2.5V, 4.5V
900mV @ 250µA
-
627 pF @ 10 V
±10V
-
350mW (Ta)
100mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP3045LVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
30 V
5.4A (Ta)
4.5V, 10V
2.1V @ 250µA
14.3 nC @ 10 V
749 pF @ 15 V
±20V
-
1.2W (Ta)
42mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMJ70H1D3SK3-13
Diodes Incorporated

MOSFET BVDSS: 651V~800V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 264 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
700 V
4.7A (Tc)
10V
5V @ 250µA
9.8 nC @ 10 V
264 pF @ 100 V
±30V
-
57W (Tc)
1.4Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMT3020LFDFQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
30 V
8.4A (Ta)
4.5V, 10V
2.5V @ 250µA
7 nC @ 10 V
393 pF @ 15 V
±20V
-
700mW (Ta)
17mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMTH69M8LFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 41V-60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque5.700
MOSFET (Metal Oxide)
60 V
15.9A (Ta), 45.4A (Tc)
4.5V, 10V
3V @ 250µA
33.5 nC @ 10 V
1925 pF @ 30 V
±16V
-
3.6W (Ta), 29.4W (Tc)
9.5mOhm @ 13.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH47M2LFVW-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V PowerDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacote: -
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MOSFET (Metal Oxide)
40 V
13.6A (Ta), 49A (Tc)
4.5V, 10V
2.3V @ 250µA
12.3 nC @ 10 V
881 pF @ 20 V
±20V
-
2.9W (Ta), 37.5W (Tc)
8.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH4014LFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacote: -
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MOSFET (Metal Oxide)
40 V
11.5A (Ta), 49.8A (Tc)
4.5V, 10V
3V @ 250µA
11.2 nC @ 10 V
750 pF @ 20 V
±20V
-
3.1W (Ta), 57.7W (Tc)
13.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN62D2UTQ-7
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
pacote: -
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MOSFET (Metal Oxide)
60 V
334mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMN1004UFDF-13
Diodes Incorporated

MOSFET N-CH 12V 15A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
pacote: -
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MOSFET (Metal Oxide)
12 V
15A (Ta)
2.5V, 4.5V
1V @ 250µA
47 nC @ 10 V
2385 pF @ 6 V
±8V
-
2.1W (Ta)
4.8mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6
6-UDFN Exposed Pad
DMPH6050SFGQ-13
Diodes Incorporated

MOSFET P-CH 60V PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque26.985
MOSFET (Metal Oxide)
60 V
6.1A (Ta), 18A (Tc)
4.5V, 10V
3V @ 250µA
24.1 nC @ 10 V
1293 pF @ 30 V
±20V
-
1.2W (Ta)
50mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN6040SSSQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SO-8 T&R 2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
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MOSFET (Metal Oxide)
60 V
5.5A (Ta)
4.5V, 10V
3V @ 250µA
22.4 nC @ 10 V
1287 pF @ 25 V
±20V
-
1.5W (Ta)
40mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMN2040UVT-7
Diodes Incorporated

MOSFET N-CH 20V 6.7A TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
20 V
6.7A (Ta)
2.5V, 4.5V
1.5V @ 250µA
7.5 nC @ 4.5 V
667 pF @ 10 V
±8V
-
1.2W (Ta)
24mOhm @ 6.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMN52D0UWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacote: -
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MOSFET (Metal Oxide)
50 V
380mA (Ta)
1.8V, 5V
1V @ 250µA
1.4 nC @ 10 V
39 pF @ 25 V
±12V
-
400mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMT10H032SFVW-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque5.610
MOSFET (Metal Oxide)
100 V
35A (Tc)
10V
4V @ 250µA
8 nC @ 10 V
544 pF @ 50 V
±20V
-
1.3W (Ta)
32mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMT6012LSS-13
Diodes Incorporated

MOSFET N-CH 60V 10.4A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque8.796
MOSFET (Metal Oxide)
60 V
10.4A (Ta)
4.5V, 10V
2V @ 250µA
22.2 nC @ 10 V
1522 pF @ 30 V
±20V
-
1.2W (Ta)
11mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMTH10H2M5STLW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI1012-8
  • Package / Case: 8-PowerSFN
pacote: -
Estoque4.500
MOSFET (Metal Oxide)
100 V
215A (Tc)
10V
4V @ 250µA
124.4 nC @ 10 V
8450 pF @ 50 V
±20V
-
5.8W (Ta), 230.8W (Tc)
2.5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI1012-8
8-PowerSFN
DMTH4007SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
40 V
15.7A (Ta), 100A (Tc)
10V
4V @ 250µA
41.9 nC @ 10 V
2082 pF @ 25 V
±20V
-
2.8W (Ta), 136W (Tc)
7.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMP510DLW-7
Diodes Incorporated

MOSFET BVDSS: 41V-60V SOT323 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 174mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): ±20V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacote: -
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MOSFET (Metal Oxide)
50 V
174mA (Ta)
±20V
2V @ 1mA
0.56 nC @ 10 V
24.6 pF @ 25 V
±20V
-
320mW (Ta)
10Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323