Página 8 - Diodes Incorporated Produtos - Transistores - FET, MOSFET - Arranjos | Heisener Electronics
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Diodes Incorporated Produtos - Transistores - FET, MOSFET - Arranjos

Registros 842
Página  8/29
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DMC2053UVTQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacote: -
Estoque17.631
-
20V
4.6A (Ta), 3.2A (Ta)
35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
1V @ 250µA
3.6nC @ 4.5V, 5.9nC @ 4.5V
369pF @ 10V, 440pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMN3401LV-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 490mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 100µA
1.2nC @ 10V
50pF @ 15V
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMP32D9UDA-7B
Diodes Incorporated

MOSFET 2P-CH 0.22A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
pacote: -
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-
-
220mA (Ta)
5Ohm @ 100mA, 4.5V
1V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
DMNH4011SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
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-
-
-
-
-
-
-
-
-
-
-
-
DMTH6016LPDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: 2.5W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
pacote: -
Estoque231
-
60V
9.2A (Ta), 33.2A (Tc)
19mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
2.5W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMN6066SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
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-
60V
3.3A (Ta)
66mOhm @ 4.5A, 10V
3V @ 250µA
10.3nC @ 10V
502pF @ 30V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMT3022UEV-13
Diodes Incorporated

MOSFET 2N-CH 30V 17A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
pacote: -
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-
30V
17A (Tc)
22mOhm @ 11A, 10V
1.8V @ 250µA
13.9nC @ 10V
903pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
DMC2400UV
Diodes Incorporated

MOSFET N/P-CH 20V 1.03A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V
  • Power - Max: 450mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
20V
1.03A (Ta), 700mA (Ta)
480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
900mV @ 250µA, 1V @ 250µA
0.5nC @ 4.5V, 0.8nC @ 10V
37.1pF @ 10V, 46.1pF @ 10V
450mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMP2900UDW-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.63A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: -
Estoque7.287
-
20V
630mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.7nC @ 4.5V
49pF @ 16V
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMTH6015LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 2.6W (Ta), 39.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacote: -
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-
60V
9.4A (Ta), 36.3A (Tc)
20mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
2.6W (Ta), 39.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMP2110UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacote: -
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-
20V
3.2A (Ta)
75mOhm @ 2.8A, 4.5V
1V @ 250µA
12.7nC @ 8V
443pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP22D5UDJ-7A
Diodes Incorporated

MOSFET 2P-CH 20V 0.36A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
  • Power - Max: 380mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
pacote: -
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-
20V
360mA (Ta)
1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.3nC @ 4.5V
17pF @ 15V
380mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMN3012LEG-13
Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
pacote: -
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-
30V
10A (Ta), 20A (Tc)
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
2.1V @ 250µA, 1.15V @ 250µA
6.1nC @ 4.5V, 12.6nC @ 4.5V
850pF @ 15V, 1480pF @ 15V
2.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
DMN3032LFDBWQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (SWP) Type B
pacote: -
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-
30V
5.5A (Ta)
30mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (SWP) Type B
BSS84V-7-79
Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
50V
130mA (Ta)
10Ohm @ 100mA, 5V
2V @ 1mA
-
45pF @ 25V
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMC2991UDR4-7
Diodes Incorporated

MOSFET N/P-CH 20V 0.5A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1010-6 (Type UXC)
pacote: -
Estoque14.460
-
20V
500mA (Ta), 360mA (Ta)
990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.28nC @ 4.5V, 0.3nC @ 4.5V
14.6pF @ 16V, 17pF @ 16V
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
X2-DFN1010-6 (Type UXC)
DMP2101UCP9-7
Diodes Incorporated

MOSFET 2P-CH 20V 2.5A 9DSN1515

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 10V
  • Power - Max: 970mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-XFBGA, DSBGA
  • Supplier Device Package: X2-DSN1515-9 (Type B)
pacote: -
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-
20V
2.5A (Ta)
100mOhm @ 1A, 4.5V
900mV @ 250µA
3.2nC @ 4.5V
392pF @ 10V
970mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-XFBGA, DSBGA
X2-DSN1515-9 (Type B)
DMT69M9LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 11A/44A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2212pF @ 30V
  • Power - Max: 2.5W (Ta), 40.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacote: -
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-
60V
11A (Ta), 44A (Tc)
12.5mOhm @ 20A, 10V
2V @ 250µA
33.5nC @ 10V
2212pF @ 30V
2.5W (Ta), 40.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMC62D2SVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
60V
480mA (Ta), 320mA (Ta)
1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
2.5V @ 250µA, 3V @ 250µA
1.04nC @ 10V, 1.1nC @ 10V
41pF @ 30V, 40pF @ 25V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN5L06VK-13A
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
50V
280mA (Ta)
2Ohm @ 50mA, 5V
1.2V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN5L06VK-7-G
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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-
50V
280mA (Ta)
2Ohm @ 50mA, 5V
1.2V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2046UVT-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
  • Power - Max: 590mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacote: -
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-
20V
2.6A (Ta)
90mOhm @ 3.6A, 4.5V
1.4V @ 250µA
7.4nC @ 10V
278pF @ 10V
590mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMT35M8LDG-7
Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
  • Power - Max: 980mW (Ta), 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type G)
pacote: -
Estoque6.000
-
30V
17A (Ta), 15.3A (Ta)
4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
1.9V @ 250µA
22.7nC @ 10V, 16.3nC @ 10V
1510pF @ 15V, 1032pF @ 15V
980mW (Ta), 2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type G)
DMN3401LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: -
Estoque27.798
-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 250µA
1.2nC @ 10V
50pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC62D0SVQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-563, SOT-666
SOT-563
DMN62D4LDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 330mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: -
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-
60V
261mA (Ta)
3Ohm @ 200mA, 10V
2V @ 250µA
1.04nC @ 10V
41pF @ 30V
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN1006UCA6-7
Diodes Incorporated

MOSFET 2N-CH X3-DSN2718-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X3-DSN2718-6
pacote: -
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-
-
-
-
1.3V @ 1mA
35.2nC @ 4.5V
2360pF @ 6V
2.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X3-DSN2718-6
DMP3021SPDW-13
Diodes Incorporated

MOSFET 2P-CH 30V 10A/39A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 39A (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1799pF @ 15V
  • Power - Max: 4.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacote: -
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-
30V
10A (Ta), 39A (Tc)
18mOhm @ 8A, 10V
2.5V @ 250µA
34nC @ 10V
1799pF @ 15V
4.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMT3020LFDBQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 7.7A 6UDFN

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacote: -
Estoque7.950
-
30V
7.7A (Ta)
20mOhm @ 9A, 10V
2.5V @ 250µA
7nC @ 10V
393pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN31D5UDAQ-7B
Diodes Incorporated

MOSFET 2N-CH 30V 0.4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
pacote: -
Request a Quote
-
30V
400mA (Ta)
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6