Name: TSM085NB03CV-RGG
Brand: Taiwan Semiconductor Corporation
SKU: TSM085NB03CV RGG
Availability: InStock
Rating: 5 (73 reviews)

TSM085NB03CV-RGG

Apenas para referência

Nº de peças	TSM085NB03CV-RGG
Fabricante	Taiwan Semiconductor Corporation
Descrição	30V, 58A, SINGLE N-CHANNEL POWER
Ficha técnica
pacote	-
ECAD
Em estoque	30.000 piece(s)
Preço unitário	Request a Quote
Tempo de entrega	A ser confirmado
Tempo de entrega estimado	jan 29 - fev 3 (Escolha o envio acelerado)
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Especificações do TSM085NB03CV-RGG

Fabricante	Taiwan Semiconductor Corporation
Categoria	Produtos semicondutores discretos - Transistores - FET, MOSFET - Simples
pacote	-
ECAD
Series	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drene para a tensão da fonte (Vdss)	30 V
Corrente - Dreno Contínuo (Id) @ 25 ° C	11A (Ta), 58A (Tc)
Voltagem de Acionamento (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Carga do Portão (Qg) (Max) @ Vgs	20 nC @ 10 V
Capacitância de Entrada (Ciss) (Max) @ Vds	1101 pF @ 15 V
Vgs (máx.)	±20V
Recurso FET	-
Dissipação de energia (máx.)	1.92W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs	8.5mOhm @ 11A, 10V
Temperatura de operação	-55°C ~ 150°C (TJ)
Tipo de montagem	Surface Mount
Pacote de Dispositivo do Fornecedor	8-PDFN (3.15x3.1)
Pacote / caso	8-PowerWDFN

TSM085NB03CV-RGG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM085NB03CV-RGG.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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TSM085NB03CV-RGG

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