Vishay Semiconductor Diodes Division Produtos - Transistores - IGBT - Módulos | Heisener Electronics
Fale conosco
SalesDept@heisener.com 86-755-83210559-802
Language Translation

* Please refer to the English Version as our Official Version.

Vishay Semiconductor Diodes Division Produtos - Transistores - IGBT - Módulos

Registros 129
Página  1/5
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-CPV362M4FPBF
Vishay Semiconductor Diodes Division

IGBT 600V 8.8A 23W IMS-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.8A
  • Power - Max: 23W
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 4.8A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque2.592
-
600V
8.8A
23W
1.7V @ 15V, 4.8A
250µA
0.34nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-GT105NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 105A HS CHOP SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 75µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque2.656
Single
1200V
134A
463W
-
75µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT105LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 105A LS CHOP SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 75µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque5.104
Single
1200V
134A
463W
-
75µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
CPV362M4U
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 3.9A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.2A
  • Power - Max: 23W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7.2A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.53nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque7.648
Three Phase Inverter
600V
7.2A
23W
1.95V @ 15V, 7.2A
250µA
0.53nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
CPV362M4K
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 31 IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5.7A
  • Power - Max: 23W
  • Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.45nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque6.704
Three Phase Inverter
600V
5.7A
23W
1.93V @ 15V, 3A
250µA
0.45nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
CPV362M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 8.8A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.8A
  • Power - Max: 23W
  • Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque3.888
Three Phase Inverter
600V
8.8A
23W
1.66V @ 15V, 8.8A
250µA
0.34nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-GB05XP120KTPBF
Vishay Semiconductor Diodes Division

MODULE MTP SWITCH

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 12A
  • Power - Max: 76W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: MTP
pacote: 12-MTP Module
Estoque2.848
Three Phase Inverter
1200V
12A
76W
-
250µA
-
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
12-MTP Module
MTP
CPV363M4U
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 6.8A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Power - Max: 36W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 13A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque3.984
Three Phase Inverter
600V
13A
36W
2V @ 15V, 13A
250µA
1.1nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-GB55NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 55A HS CHOPPER SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque5.376
Single
1200V
84A
431W
-
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB55LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 55A LS CHOPPER SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque7.664
Single
1200V
84A
431W
-
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB75NA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 70A HS CHOPPER SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 109A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque2.128
Single
600V
109A
447W
2V @ 15V, 35A
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB75LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 70A LS CHOPPER SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 109A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque6.576
Single
600V
109A
447W
2V @ 15V, 35A
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-ETF150Y65N
Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

  • IGBT Type: NPT
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 201A
  • Power - Max: 600W
  • Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
pacote: Module
Estoque5.136
Half Bridge Inverter
650V
201A
600W
2.17V @ 15V, 150A
-
-
Standard
Yes
175°C (TJ)
-
Module
Module
VS-ENQ030L120S
Vishay Semiconductor Diodes Division

IGBT 1200V 61A 216W EMIPAK-1B

  • IGBT Type: Trench
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 61A
  • Power - Max: 216W
  • Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 30A
  • Current - Collector Cutoff (Max): 230µA
  • Input Capacitance (Cies) @ Vce: 3.34nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK-1B
  • Supplier Device Package: EMIPAK-1B
pacote: EMIPAK-1B
Estoque5.344
Three Level Inverter
1200V
61A
216W
2.52V @ 15V, 30A
230µA
3.34nF @ 30V
Standard
Yes
150°C (TJ)
Chassis Mount
EMIPAK-1B
EMIPAK-1B
VS-ETF075Y60U
Vishay Semiconductor Diodes Division

IGBT 600V 109A 294W EMIPAK-2B

  • IGBT Type: Trench
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 109A
  • Power - Max: 294W
  • Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 4.44nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK-2B
  • Supplier Device Package: EMIPAK-2B
pacote: EMIPAK-2B
Estoque4.272
Three Level Inverter
600V
109A
294W
1.93V @ 15V, 75A
100µA
4.44nF @ 30V
Standard
Yes
175°C (TJ)
Chassis Mount
EMIPAK-2B
EMIPAK-2B
VS-ETF150Y65U
Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

  • IGBT Type: Trench
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 142A
  • Power - Max: 417W
  • Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK-2B
  • Supplier Device Package: EMIPAK-2B
pacote: EMIPAK-2B
Estoque4.816
Three Level Inverter
650V
142A
417W
2.06V @ 15V, 100A
100µA
6.6nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
EMIPAK-2B
EMIPAK-2B
VS-ETL015Y120H
Vishay Semiconductor Diodes Division

IGBT 1200V 22A 89W EMIPAK-2B

  • IGBT Type: Trench
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 22A
  • Power - Max: 89W
  • Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
  • Current - Collector Cutoff (Max): 75µA
  • Input Capacitance (Cies) @ Vce: 1.07nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK-2B
  • Supplier Device Package: EMIPAK-2B
pacote: EMIPAK-2B
Estoque6.336
-
1200V
22A
89W
3.03V @ 15V, 15A
75µA
1.07nF @ 30V
Standard
Yes
150°C (TJ)
Chassis Mount
EMIPAK-2B
EMIPAK-2B
VS-GB90SA120U
Vishay Semiconductor Diodes Division

TRANSISTOR INSLTED GATE BIPOLAR

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 149A
  • Power - Max: 862W
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4
  • Supplier Device Package: SOT-227
pacote: SOT-227-4
Estoque5.200
Single
1200V
149A
862W
3.9V @ 15V, 75A
250µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4
SOT-227
VS-50MT060WHTAPBF
Vishay Semiconductor Diodes Division

IGBT 600V 114A 658W MTP

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 114A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 400µA
  • Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: MTP
pacote: 12-MTP Module
Estoque5.888
Half Bridge
600V
114A
658W
3.2V @ 15V, 100A
400µA
7.1nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
12-MTP Module
MTP
VS-GP250SA60S
Vishay Semiconductor Diodes Division

IGBT 600V 380A 893W SOT-227

  • IGBT Type: PT, Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 380A
  • Power - Max: 893W
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque7.584
Single
600V
380A
893W
1.3V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT175DA120U
Vishay Semiconductor Diodes Division

IGBT 1200V 288A 1087W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 288A
  • Power - Max: 1087W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque6.128
Single
1200V
288A
1087W
2.1V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-40MT120UHAPBF
Vishay Semiconductor Diodes Division

IGBT 1200V 80A 463W MTP

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 8.28nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: MTP
pacote: 12-MTP Module
Estoque7.408
Half Bridge
1200V
80A
463W
4.91V @ 15V, 80A
250µA
8.28nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
12-MTP Module
MTP
VS-GB90DA120U
Vishay Semiconductor Diodes Division

IGBT 1200V 149A 862W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 149A
  • Power - Max: 862W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque6.180
Single
1200V
149A
862W
3.8V @ 15V, 75A
250µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-CPV364M4KPBF
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 13A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Power - Max: 63W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.6nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque6.480
Three Phase Inverter
600V
24A
63W
1.8V @ 15V, 24A
250µA
1.6nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-CPV364M4FPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Power - Max: 63W
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 2.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
pacote: 19-SIP (13 Leads), IMS-2
Estoque6.084
-
600V
27A
63W
1.5V @ 15V, 15A
250µA
2.2nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-GA200SA60UP
Vishay Semiconductor Diodes Division

IGBT 600V 200A 500W SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacote: SOT-227-4, miniBLOC
Estoque6.264
Single
600V
200A
500W
1.9V @ 15V, 100A
1mA
16.5nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB90DA60U
Vishay Semiconductor Diodes Division

TRANSISTOR INSLTED GATE BIPOLAR

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 147A
  • Power - Max: 625W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4
  • Supplier Device Package: SOT-227
pacote: SOT-227-4
Estoque7.692
Single
600V
147A
625W
2.8V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4
SOT-227
VS-GA250SA60S
Vishay Semiconductor Diodes Division

IGBT 600V 400A SOT227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 961W
  • Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4
  • Supplier Device Package: SOT-227
pacote: SOT-227-4
Estoque6.336
Single
600V
400A
961W
1.66V @ 15V, 200A
1mA
16.25nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4
SOT-227