GeneSiC Semiconductor Produtos - Diodos - Retificadores de Ponte

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GBU6J	GeneSiC Semiconductor	DIODE BRIDGE 600V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque8.460	Standard	600V	6A	1.1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6B	GeneSiC Semiconductor	DIODE BRIDGE 100V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque22.404	Standard	100V	6A	1.1V @ 6A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
KBU6B	GeneSiC Semiconductor	DIODE BRIDGE 100V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	pacote: 4-SIP, KBU	Estoque15.996	Standard	100V	6A	1V @ 6A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
KBU6M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	pacote: 4-SIP, KBU	Estoque16.944	Standard	1000V	6A	1V @ 6A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
GBU4G	GeneSiC Semiconductor	DIODE BRIDGE 400V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque26.616	Standard	400V	4A	1.1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B	GeneSiC Semiconductor	DIODE BRIDGE 100V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque17.016	Standard	100V	4A	1.1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU10D	GeneSiC Semiconductor	DIODE BRIDGE 200V 10A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque21.624	Standard	200V	10A	1.1V @ 10A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBL005	GeneSiC Semiconductor	DIODE BRIDGE 50V 4A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	pacote: 4-SIP, GBL	Estoque19.284	Standard	50V	4A	1.1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
GBU4A	GeneSiC Semiconductor	DIODE BRIDGE 50V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	pacote: 4-SIP, GBU	Estoque9.984	Standard	50V	4A	1.1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
DB103G	GeneSiC Semiconductor	DIODE BRIDGE 200V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	pacote: 4-EDIP (0.321", 8.15mm)	Estoque59.328	Standard	200V	1A	1.1V @ 1A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
BR81	GeneSiC Semiconductor	DIODE BRIDGE 100V 8A BR-8 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-8 Supplier Device Package: BR-8	pacote: 4-Square, BR-8	Estoque16.704	Standard	100V	8A	1.1V @ 4A	10µA @ 100V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, BR-8	BR-8
BR62	GeneSiC Semiconductor	DIODE BRIDGE 200V 6A BR-6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-6 Supplier Device Package: BR-6	pacote: 4-Square, BR-6	Estoque17.544	Standard	200V	6A	1V @ 3A	10µA @ 200V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, BR-6	BR-6
KBU8M	GeneSiC Semiconductor	DIODE BRIDGE 1000V 8A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	pacote: 4-SIP, KBU	Estoque16.440	Standard	1000V	8A	1V @ 8A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
W01M	GeneSiC Semiconductor	DIODE BRIDGE 100V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	pacote: 4-Circular, WOM	Estoque145.692	Standard	100V	1.5A	1V @ 1A	10µA @ 100V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
GBPC2510W	GeneSiC Semiconductor	DIODE BRIDGE 1000V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque3.456	Standard	1000V	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3504W	GeneSiC Semiconductor	DIODE BRIDGE 400V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque5.536	Standard	400V	35A	1.1V @ 17.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3504T	GeneSiC Semiconductor	DIODE BRIDGE 400V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-T Supplier Device Package: GBPC-T	pacote: 4-Square, GBPC-T	Estoque19.032	Standard	400V	35A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-T	GBPC-T
GBPC2508W	GeneSiC Semiconductor	DIODE BRIDGE 800V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque43.872	Standard	800V	25A	1.1V @ 1.2A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3502T	GeneSiC Semiconductor	DIODE BRIDGE 200V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-T Supplier Device Package: GBPC-T	pacote: 4-Square, GBPC-T	Estoque21.816	Standard	200V	35A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-T	GBPC-T
GBPC2508T	GeneSiC Semiconductor	DIODE BRIDGE 800V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	pacote: 4-Square, GBPC	Estoque16.848	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3508W	GeneSiC Semiconductor	DIODE BRIDGE 800V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque7.200	Standard	800V	35A	1.1V @ 17.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3510W	GeneSiC Semiconductor	DIODE BRIDGE 1000V 35A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque33.396	Standard	1000V	35A	1.1V @ 17.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2506W	GeneSiC Semiconductor	DIODE BRIDGE 600V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque4.736	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2504W	GeneSiC Semiconductor	DIODE BRIDGE 400V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque6.704	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2504T	GeneSiC Semiconductor	DIODE BRIDGE 400V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	pacote: 4-Square, GBPC	Estoque20.916	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2506T	GeneSiC Semiconductor	DIODE BRIDGE 600V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	pacote: 4-Square, GBPC	Estoque22.092	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2502W	GeneSiC Semiconductor	DIODE BRIDGE 200V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	pacote: 4-Square, GBPC-W	Estoque6.224	Standard	200V	25A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBL02	GeneSiC Semiconductor	DIODE BRIDGE 200V 4 A- GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	pacote: 4-SIP, GBL	Estoque6.036	Standard	200V	4A	1.1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
KBU6D	GeneSiC Semiconductor	DIODE BRIDGE 200V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	pacote: 4-SIP, KBU	Estoque4.896	Standard	200V	6A	1V @ 6A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
W02M	GeneSiC Semiconductor	DIODE BRIDGE 200V 1.5A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	pacote: 4-Circular, WOM	Estoque24.120	Standard	200V	1.5A	1V @ 1A	10µA @ 200V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM

GBU6J

GeneSiC Semiconductor

DIODE BRIDGE 600V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque8.460

Standard

600V

6A

1.1V @ 6A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6B

GeneSiC Semiconductor

DIODE BRIDGE 100V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque22.404

Standard

100V

6A

1.1V @ 6A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

KBU6B

GeneSiC Semiconductor

DIODE BRIDGE 100V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

pacote: 4-SIP, KBU

Estoque15.996

Standard

100V

6A

1V @ 6A

10µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

KBU6M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

pacote: 4-SIP, KBU

Estoque16.944

Standard

1000V

6A

1V @ 6A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

GBU4G

GeneSiC Semiconductor

DIODE BRIDGE 400V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque26.616

Standard

400V

4A

1.1V @ 4A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4B

GeneSiC Semiconductor

DIODE BRIDGE 100V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque17.016

Standard

100V

4A

1.1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU10D

GeneSiC Semiconductor

DIODE BRIDGE 200V 10A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque21.624

Standard

200V

10A

1.1V @ 10A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBL005

GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

pacote: 4-SIP, GBL

Estoque19.284

Standard

50V

4A

1.1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

GBU4A

GeneSiC Semiconductor

DIODE BRIDGE 50V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

pacote: 4-SIP, GBU

Estoque9.984

Standard

50V

4A

1.1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

DB103G

GeneSiC Semiconductor

DIODE BRIDGE 200V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

pacote: 4-EDIP (0.321", 8.15mm)

Estoque59.328

Standard

200V

1A

1.1V @ 1A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

BR81

GeneSiC Semiconductor

DIODE BRIDGE 100V 8A BR-8

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-8
Supplier Device Package: BR-8

pacote: 4-Square, BR-8

Estoque16.704

Standard

100V

8A

1.1V @ 4A

10µA @ 100V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, BR-8

BR-8

BR62

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A BR-6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-6
Supplier Device Package: BR-6

pacote: 4-Square, BR-6

Estoque17.544

Standard

200V

6A

1V @ 3A

10µA @ 200V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, BR-6

BR-6

KBU8M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 8A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

pacote: 4-SIP, KBU

Estoque16.440

Standard

1000V

8A

1V @ 8A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

W01M

GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

pacote: 4-Circular, WOM

Estoque145.692

Standard

100V

1.5A

1V @ 1A

10µA @ 100V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

GBPC2510W

GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque3.456

Standard

1000V

25A

1.1V @ 12.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3504W

GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque5.536

Standard

400V

35A

1.1V @ 17.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3504T

GeneSiC Semiconductor

DIODE BRIDGE 400V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-T
Supplier Device Package: GBPC-T

pacote: 4-Square, GBPC-T

Estoque19.032

Standard

400V

35A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC-T

GBPC-T

GBPC2508W

GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.2A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque43.872

Standard

800V

25A

1.1V @ 1.2A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3502T

GeneSiC Semiconductor

DIODE BRIDGE 200V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-T
Supplier Device Package: GBPC-T

pacote: 4-Square, GBPC-T

Estoque21.816

Standard

200V

35A

1.1V @ 12.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC-T

GBPC-T

GBPC2508T

GeneSiC Semiconductor

DIODE BRIDGE 800V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

pacote: 4-Square, GBPC

Estoque16.848

Standard

800V

25A

1.1V @ 12.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC3508W

GeneSiC Semiconductor

DIODE BRIDGE 800V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque7.200

Standard

800V

35A

1.1V @ 17.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3510W

GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque33.396

Standard

1000V

35A

1.1V @ 17.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2506W

GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque4.736

Standard

600V

25A

1.1V @ 12.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2504W

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque6.704

Standard

400V

25A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC2504T

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

pacote: 4-Square, GBPC

Estoque20.916

Standard

400V

25A

1.1V @ 12.5A

5µA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC2506T

GeneSiC Semiconductor

DIODE BRIDGE 600V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

pacote: 4-Square, GBPC

Estoque22.092

Standard

600V

25A

1.1V @ 12.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC2502W

GeneSiC Semiconductor

DIODE BRIDGE 200V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

pacote: 4-Square, GBPC-W

Estoque6.224

Standard

200V

25A

1.1V @ 12.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBL02

GeneSiC Semiconductor

DIODE BRIDGE 200V 4 A- GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

pacote: 4-SIP, GBL

Estoque6.036

Standard

200V

4A

1.1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

KBU6D

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

pacote: 4-SIP, KBU

Estoque4.896

Standard

200V

6A

1V @ 6A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

W02M

GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

pacote: 4-Circular, WOM

Estoque24.120

Standard

200V

1.5A

1V @ 1A

10µA @ 200V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM