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GeneSiC Semiconductor Produtos - Diodos - Retificadores de Ponte

Registros 305
Página  2/11
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2W08M
GeneSiC Semiconductor

DIODE BRIDGE 800V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque143.784
Standard
800V
2A
1.1V @ 2A
10µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W06M
GeneSiC Semiconductor

DIODE BRIDGE 600V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque186.816
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W04M
GeneSiC Semiconductor

DIODE BRIDGE 400V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque4.656
Standard
400V
2A
1.1V @ 2A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W02M
GeneSiC Semiconductor

DIODE BRIDGE 200V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque276.900
Standard
200V
2A
1.1V @ 2A
10µA @ 200V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot 2W01M
GeneSiC Semiconductor

DIODE BRIDGE 100V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque154.128
Standard
100V
2A
1.1V @ 2A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
2W005M
GeneSiC Semiconductor

DIODE BRIDGE 50V 2A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque5.520
Standard
50V
2A
1.1V @ 2A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot DB157G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque6.480
Standard
1000V
1.5A
1.1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB156G
GeneSiC Semiconductor

DIODE BRIDGE 800V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque18.816
Standard
800V
1.5A
1.1V @ 1.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB155G
GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque7.616
Standard
600V
1.5A
1.1V @ 1.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB154G
GeneSiC Semiconductor

DIODE BRIDGE 400V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque6.128
Standard
400V
1.5A
1.1V @ 1.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB153G
GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque7.152
Standard
200V
1.5A
1.1V @ 1.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB152G
GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque2.464
Standard
100V
1.5A
1.1V @ 1.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
DB151G
GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque3.344
Standard
50V
1.5A
1.1V @ 1.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot W005M
GeneSiC Semiconductor

DIODE BRIDGE 50V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque7.824
Standard
50V
1.5A
1V @ 1A
10µA @ 50V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot DB107G
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque14.688
Standard
1000V
1A
1.1V @ 1A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB106G
GeneSiC Semiconductor

DIODE BRIDGE 800V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque4.704
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB105G
GeneSiC Semiconductor

DIODE BRIDGE 600V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque194.304
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB104G
GeneSiC Semiconductor

DIODE BRIDGE 400V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque56.748
Standard
400V
1A
1.1V @ 1A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB102G
GeneSiC Semiconductor

DIODE BRIDGE 100V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque228.000
Standard
100V
1A
1.1V @ 1A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot DB101G
GeneSiC Semiconductor

DIODE BRIDGE 50V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
pacote: 4-EDIP (0.321", 8.15mm)
Estoque7.032
Standard
50V
1A
1.1V @ 1A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
hot W08M
GeneSiC Semiconductor

DIODE BRIDGE 800V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque120.072
Standard
800V
1.5A
1V @ 1A
5µA @ 800V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot W06M
GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque15.888
Standard
600V
1.5A
1V @ 1A
10µA @ 600V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot W04M
GeneSiC Semiconductor

DIODE BRIDGE 400V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque41.748
Standard
400V
1.5A
1V @ 1A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
KBU8A
GeneSiC Semiconductor

DIODE BRIDGE 50V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque10.020
Standard
50V
8A
1V @ 8A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot KBU8J
GeneSiC Semiconductor

DIODE BRIDGE 600V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: 4-SIP, KBU
Estoque3.696
Standard
600V
8A
1V @ 8A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot W10M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
pacote: 4-Circular, WOM
Estoque404.940
Standard
1000V
1.5A
1V @ 1A
10µA @ 1000V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
hot GBU8J
GeneSiC Semiconductor

DIODE BRIDGE 600V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque9.516
Standard
600V
8A
1.1V @ 8A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU8D
GeneSiC Semiconductor

DIODE BRIDGE 200V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque12.804
Standard
200V
8A
1.1V @ 8A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8G
GeneSiC Semiconductor

DIODE BRIDGE 400V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque23.568
Standard
400V
8A
1.1V @ 8A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU8B
GeneSiC Semiconductor

DIODE BRIDGE 100V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacote: 4-SIP, GBU
Estoque4.784
Standard
100V
8A
1.1V @ 8A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU