Página 1370 - Memória | Circuitos integrados | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Memória

Registros 62.144
Página  1.370/2.220
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42VM16800E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacote: 54-TFBGA
Estoque4.752
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
5.4ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
CY14B512J2-SXIT
Cypress Semiconductor Corp

IC NVSRAM 512KBIT 3.4MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 3.4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.928
NVSRAM
NVSRAM (Non-Volatile SRAM)
512Kb (64K x 8)
I2C
3.4MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MT29F64G08AJABAWP:B
Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacote: 48-TFSOP (0.724", 18.40mm Width)
Estoque133.044
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot MT46H8M16LFBF-6:K
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
pacote: 60-VFBGA
Estoque4.400
DRAM
SDRAM - Mobile LPDDR
128Mb (8M x 16)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (8x9)
CAT28C64BH1312
ON Semiconductor

IC EEPROM 64KBIT 120NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
pacote: 28-TSSOP (0.465", 11.80mm Width)
Estoque7.008
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
5ms
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
IDT71V124SA20TYI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 32-SOJ
pacote: 32-BSOJ (0.300", 7.62mm Width)
Estoque2.496
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.300", 7.62mm Width)
32-SOJ
IS42S16800E-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacote: 54-TFBGA
Estoque3.024
DRAM
SDRAM
128Mb (8M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
MT46H8M32LFB5-6:A TR
Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
pacote: 90-VFBGA
Estoque5.360
DRAM
SDRAM - Mobile LPDDR
256Mb (8M x 32)
Parallel
166MHz
12ns
5.0ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
DS1201N
Maxim Integrated

IC SRAM 1KBIT 100NS 5SIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP Module
  • Supplier Device Package: -
pacote: 5-SIP Module
Estoque5.168
SRAM
SRAM
1Kb (128 x 8)
I2C
4MHz
-
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
5-SIP Module
-
AT27C2048-55VI
Microchip Technology

IC OTP 2MBIT 55NS 40VSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 40-VSOP
pacote: 40-TFSOP (0.488", 12.40mm Width)
Estoque5.536
EPROM
EPROM - OTP
2Mb (128K x 16)
Parallel
-
-
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
40-TFSOP (0.488", 12.40mm Width)
40-VSOP
7016S12PF8
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 12NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 144Kb (16K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
pacote: 80-LQFP
Estoque2.640
SRAM
SRAM - Dual Port, Asynchronous
144Kb (16K x 9)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
IS43R16160F-5TLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
pacote: 66-TSSOP (0.400", 10.16mm Width)
Estoque5.808
DRAM
SDRAM - DDR
256Mb (16M x 16)
Parallel
200MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
SST25WF020AT-40I/MF
Microchip Technology

IC FLASH 2MBIT 40MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WDFN (5x6)
pacote: 8-WDFN Exposed Pad
Estoque3.248
FLASH
FLASH
2Mb (256K x 8)
SPI
40MHz
3.5ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WDFN (5x6)
S25FL116K0XBHIS30
Cypress Semiconductor Corp

IC FLASH 16MBIT 108MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
pacote: 24-TBGA
Estoque3.248
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
M93C56-RDW3TP/K
STMicroelectronics

IC EEPROM 2KBIT 2MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque3.728
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
2MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MT53B512M64D4NW-062 WT:D
Micron Technology Inc.

IC DRAM 32G 1600MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque7.504
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
S34MS01G200TFI903
Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 48TSOP I

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacote: 48-TFSOP (0.724", 18.40mm Width)
Estoque5.952
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
AS4C64M16D2B-25BCN
Alliance Memory, Inc.

IC DRAM 1G PARALLEL 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
pacote: 84-TFBGA
Estoque2.384
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
MT29F16G08CBACAWP-IT:C TR
Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.800
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
BR93A46F-WME2
Rohm Semiconductor

MEMORY EEPROM

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.173", 4.40mm Width)
Estoque18.810
EEPROM
EEPROM
1Kb (64 x 16)
SPI
2MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
IS21TF64G-JCLI
ISSI, Integrated Silicon Solution Inc

IC FLASH 512GBIT EMMC 153VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
pacote: -
Estoque330
FLASH
FLASH - NAND (TLC)
512Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
S-25C640A0H-T8T2U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: SPI
  • Clock Frequency: 5 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: -
Request a Quote
EEPROM
EEPROM
64Kbit
SPI
5 MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
S25HL01GTFAMHV013
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacote: -
Request a Quote
FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, QPI
166 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
MT53E384M32D2FW-046-AAT-E
Micron Technology Inc.

IC DRAM 12GBIT PAR 200TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 12Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
pacote: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
12Gbit
Parallel
1.066 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TA)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
SM662PED-BFSS-1
Silicon Motion, Inc.

IC FLASH 320GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 320Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacote: -
Estoque426
FLASH
FLASH - NAND (SLC)
320Gbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
CY7C1006B-15VC
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
pacote: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
15ns
15 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
BY25Q32ESHIG-R
BYTe Semiconductor

32 MBIT, 3.0V (2.7V TO 3.6V), -4

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: 11.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
pacote: -
Request a Quote
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O
120 MHz
50µs, 2.4ms
11.5 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XDFN Exposed Pad
8-USON (4x3)
GD25WQ80ESIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 120µs, 4ms
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
Request a Quote
FLASH
FLASH - NOR (SLC)
8Mbit
SPI - Quad I/O
104 MHz
120µs, 4ms
12 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP