Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 30V 31A MX
|
pacote: DirectFET? Isometric MX |
Estoque6.160 |
|
MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 53nC @ 4.5V | 6030pF @ 15V | ±20V | - | 2.8W (Ta), 104W (Tc) | 1.8 mOhm @ 31A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
ON Semiconductor |
MOSFET N-CH 25V 8.5A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque101.520 |
|
MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 500V 2.1A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque4.448 |
|
MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 4.9 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N CH 300V 19A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.872 |
|
MOSFET (Metal Oxide) | 300V | 19A (Tc) | 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | ±20V | - | 210W (Tc) | 185 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N CH 40V 195A TO220AB
|
pacote: TO-220-3 |
Estoque5.744 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | ±20V | - | - | 1.6 mOhm @ 100A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 11A TO-263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque412.776 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | ±20V | - | 96W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 8TDSON
|
pacote: 8-PowerVDFN |
Estoque6.176 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 80µA | 105nC @ 10V | 8100pF @ 25V | ±20V | - | 150W (Tc) | 2.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 61A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.360 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 600V 84A SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque4.592 |
|
MOSFET (Metal Oxide) | 600V | 84A | 10V | 5V @ 5mA | 600nC @ 10V | 24000pF @ 25V | ±30V | - | 960W (Tc) | 55 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacote: 8-PowerTDFN |
Estoque6.432 |
|
MOSFET (Metal Oxide) | 150V | 24A (Tc) | 6V, 10V | 4V @ 250µA | 36nC @ 10V | 1829pF @ 75V | ±20V | - | 96W (Tc) | 65 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 5.5A TSMT
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque370.212 |
|
MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 8.6nC @ 10V | 355pF @ 15V | ±20V | - | 1.25W (Ta) | 25 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 600V 29A TO-247AD
|
pacote: TO-3P-3 Full Pack |
Estoque128.928 |
|
MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 2600pF @ 100V | ±20V | - | 250W (Tc) | 125 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
||
Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A SOT-23F
|
pacote: SOT-23-3 Flat Leads |
Estoque2.544 |
|
MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 590pF @ 10V | 12V | - | 350mW (Ta) | 40 mOhm @ 1.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 30V 5.6A SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque7.168 |
|
MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 11.3nC @ 10V | 498pF @ 15V | ±20V | - | 1.8W (Ta) | 29 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 650V TO-220-3
|
pacote: TO-220-3 Full Pack |
Estoque21.924 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 28W (Tc) | 650 mOhm @ 2.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 800V 6A TO220FP
|
pacote: TO-220-3 Full Pack |
Estoque6.000 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 16.5nC @ 10V | 450pF @ 100V | ±30V | - | 25W (Tc) | 950 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 79A LFPAK
|
pacote: SC-100, SOT-669 |
Estoque5.696 |
|
MOSFET (Metal Oxide) | 30V | 79A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 24nC @ 10V | 1425pF @ 12V | ±20V | - | 55W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
MOSFET N-CH 950V 17.5A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.000 |
|
MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1500pF @ 100V | ±30V | - | 250W (Tc) | 330 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET P-CH 40V 10A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque4.704 |
|
MOSFET (Metal Oxide) | 40V | 10A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 34nC @ 4.5V | 3525pF @ 25V | ±20V | - | 2.7W (Ta) | 15 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 600V 1.2A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque42.840 |
|
MOSFET (Metal Oxide) | 600V | 1.2A (Tc) | 10V | 4.5V @ 50µA | 9.5nC @ 10V | 140pF @ 50V | ±30V | - | 27W (Tc) | 8 Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N CH 500V 22A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque20.628 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 4V @ 250µA | 62.5nC @ 10V | 1973pF @ 50V | ±25V | - | 190W (Tc) | 130 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET P-CH 20V 2.3A 6-WDFN
|
pacote: 6-WDFN Exposed Pad |
Estoque674.028 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 30A 8DFN
|
pacote: 8-PowerSMD, Flat Leads |
Estoque24.342 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 28A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 25nC @ 10V | 1128pF @ 15V | ±20V | - | 5W (Ta), 24W (Tc) | 5.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
onsemi |
PT8P PORTFOLIO EXPANSION
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 17A (Ta), 88.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 105 nC @ 10 V | 2706 pF @ 15 V | ±25V | - | 3.2W (Ta), 88.2W (Tc) | 7.5mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque9.000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -2A, -100V
|
pacote: - |
Estoque17.664 |
|
MOSFET (Metal Oxide) | 100 V | 2A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 2000 pF @ 50 V | ±20V | - | 1.78W (Ta) | 200mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
STMicroelectronics |
N-CHANNEL 650 V, 39 MOHM TYP., 5
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 4.2V @ 250µA | 80 nC @ 10 V | 4610 pF @ 400 V | ±30V | - | 312W (Tc) | 45mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
EPC |
GANFET N-CH 15V 3.4A DIE
|
pacote: - |
Estoque116.046 |
|
GaNFET (Gallium Nitride) | 15 V | 3.4A (Ta) | 5V | 2.5V @ 1mA | 1.1 nC @ 5 V | 118 pF @ 7.5 V | +6V, -4V | - | - | 26mOhm @ 1.5A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |