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Transistores - FET, MOSFET - RF

Registros 3.855
Página  72/138
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA192001E1V4XWSA1
Infineon Technologies

FET RF 65V 1.99GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15.9dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
pacote: 2-Flatpack, Fin Leads
Estoque4.752
1.99GHz
15.9dB
30V
-
-
1.8A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
BLF7G22L-160,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 43W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacote: SOT-502A
Estoque5.664
2.11GHz ~ 2.17GHz
18dB
28V
36A
-
1.3A
43W
65V
SOT-502A
LDMOST
hot MRF8S19260HSR6
NXP

FET RF 2CH 65V 1.99GHZ NI1230S-8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 18.2dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 74W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110B
  • Supplier Device Package: NI1230S-8
pacote: SOT-1110B
Estoque14.520
1.99GHz
18.2dB
30V
-
-
1.6A
74W
65V
SOT-1110B
NI1230S-8
MRFE6S9201HR3
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacote: NI-780
Estoque5.200
880MHz
20.8dB
28V
-
-
1.4A
40W
66V
NI-780
NI-780
CRF24010PE
Cree/Wolfspeed

FET RF 120V 1.95GHZ 440196

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.95GHz
  • Gain: 15dB
  • Voltage - Test: 48V
  • Current Rating: 1.8A
  • Noise Figure: 3.1dB
  • Current - Test: 500mA
  • Power - Output: 12W
  • Voltage - Rated: 120V
  • Package / Case: 440196
  • Supplier Device Package: 440196
pacote: 440196
Estoque5.216
1.95GHz
15dB
48V
1.8A
3.1dB
500mA
12W
120V
440196
440196
CRF24010FE
Cree/Wolfspeed

FET RF 120V 1.95GHZ 440166

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.95GHz
  • Gain: 15dB
  • Voltage - Test: 48V
  • Current Rating: 1.8A
  • Noise Figure: 3.1dB
  • Current - Test: 500mA
  • Power - Output: 12W
  • Voltage - Rated: 120V
  • Package / Case: 440166
  • Supplier Device Package: 440166
pacote: 440166
Estoque2.944
1.95GHz
15dB
48V
1.8A
3.1dB
500mA
12W
120V
440166
440166
MRF6S19100MR1
NXP

FET RF 68V 1.99GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
pacote: TO-270-4
Estoque3.360
1.99GHz
14.5dB
28V
-
-
950mA
22W
68V
TO-270-4
TO-270 WB-4
hot MRF5S21100HR5
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacote: NI-780
Estoque4.864
2.16GHz ~ 2.17GHz
13.5dB
28V
-
-
1.05A
23W
65V
NI-780
NI-780
PTFC262808FVV1XWSA1
Infineon Technologies

RF MOSFET TRANSISTORS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque5.392
-
-
-
-
-
-
-
-
-
-
PTFA211801EV5R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
pacote: 2-Flatpack, Fin Leads, Flanged
Estoque4.720
2.11GHz ~ 2.17GHz
15.5dB
28V
10µA
-
1.2A
180W
65V
2-Flatpack, Fin Leads, Flanged
H-36260-2
PTFA092213ELV4R250XTMA2
Infineon Technologies

IC RF FET LDMOS H-33288-6

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque6.736
-
-
-
-
-
-
-
-
-
-
SD56120C
STMicroelectronics

FET RF 72V 860MHZ M246

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 100W
  • Voltage - Rated: 72V
  • Package / Case: M246
  • Supplier Device Package: M246
pacote: M246
Estoque4.288
860MHz
16dB
28V
14A
-
400mA
100W
72V
M246
M246
BLF2425M6LS180P,11
Ampleon USA Inc.

RF FET LDMOS 65V 13.3DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.45GHz
  • Gain: 13.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacote: SOT539B
Estoque7.728
2.45GHz
13.3dB
28V
-
-
10mA
180W
65V
SOT539B
SOT539B
BLC9G20XS-400AVT
Ampleon USA Inc.

RF FET LDMOS 65V 16.2DB SOT12587

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 16.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 570W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: SOT-1258-7
pacote: SOT-1258-7
Estoque2.928
1.81GHz ~ 1.88GHz
16.2dB
32V
-
-
800mA
570W
65V
SOT-1258-7
SOT-1258-7
BLF8G20LS-160VU
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT1239B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 35.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1239B
  • Supplier Device Package: CDFM6
pacote: SOT-1239B
Estoque7.936
1.81GHz ~ 1.88GHz
20dB
28V
-
-
800mA
35.5W
65V
SOT-1239B
CDFM6
BLF7G20LS-90P,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
pacote: SOT-1121B
Estoque3.008
1.81GHz ~ 1.88GHz
19.5dB
28V
18A
-
550mA
40W
65V
SOT-1121B
CDFM4
ATF-54143-TR2G
Broadcom Limited

FET RF 5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 16.6dB
  • Voltage - Test: 3V
  • Current Rating: 120mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 20.4dBm
  • Voltage - Rated: 5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacote: SC-82A, SOT-343
Estoque3.456
2GHz
16.6dB
3V
120mA
0.5dB
60mA
20.4dBm
5V
SC-82A, SOT-343
SOT-343
ATF-541M4-TR2
Broadcom Limited

IC PHEMT 2GHZ 3V 60MA MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 3V
  • Current Rating: 120mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 21.4dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
pacote: 0505 (1412 Metric)
Estoque2.464
2GHz
17.5dB
3V
120mA
0.5dB
60mA
21.4dBm
5V
0505 (1412 Metric)
MiniPak 1412
AFT05MS003NT1
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 20.8dB
  • Voltage - Test: 7.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 3W
  • Voltage - Rated: 30V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacote: TO-243AA
Estoque7.376
520MHz
20.8dB
7.5V
-
-
100mA
3W
30V
TO-243AA
SOT-89-3
IXZ318N50
IXYS

RF MOSFET N-CHANNEL

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 500V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: -
pacote: 6-SMD, Flat Lead Exposed Pad
Estoque6.032
-
-
-
1mA
-
-
-
500V
6-SMD, Flat Lead Exposed Pad
-
hot MMBFJ310LT1G
ON Semiconductor

JFET N-CH 25V 60MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque42.780
-
-
-
60mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
A2T27S007NT1
NXP Semiconductors

RF MOSFET LDMOS 28V 16DFN

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 18.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 28.8dBm
  • Voltage - Rated: 65 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
pacote: -
Request a Quote
400MHz ~ 2.7GHz
18.9dB
28 V
10µA
-
60 mA
28.8dBm
65 V
16-VDFN Exposed Pad
16-DFN (4x6)
TAV-581
Mini-Circuits

RF MOSFET E-PHEMT 3V FG873

  • Transistor Type: E-pHEMT
  • Frequency: 6GHz
  • Gain: 22.9dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.5dB
  • Current - Test: 30 mA
  • Power - Output: 20.2dB
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: FG873
pacote: -
Request a Quote
6GHz
22.9dB
3 V
-
1.5dB
30 mA
20.2dB
5 V
4-SMD, No Lead
FG873
PTVA047002EV-V1-R250
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTRA093608PV1-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS LG-31275PS-6

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
2729GN-300VP
Microchip Technology

RF MOSFET HEMT 50V 55-QP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 15.3dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75 mA
  • Power - Output: 335W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QP
  • Supplier Device Package: 55-QP
pacote: -
Request a Quote
2.7GHz ~ 2.9GHz
15.3dB
50 V
-
-
75 mA
335W
125 V
55-QP
55-QP
RF2L27015CG2
STMicroelectronics

RF MOSFET LDMOS E2

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 15W
  • Voltage - Rated: 60 V
  • Package / Case: E2
  • Supplier Device Package: E2
pacote: -
Request a Quote
700MHz ~ 2.7GHz
19dB
-
1µA
-
-
15W
60 V
E2
E2
IGN1214L500B
Integra Technologies Inc.

RF MOSFET HEMT 50V PL95A1

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 650W
  • Voltage - Rated: 160 V
  • Package / Case: PL95A1
  • Supplier Device Package: PL95A1
pacote: -
Estoque6
1.2GHz ~ 1.4GHz
15dB
50 V
-
-
200 mA
650W
160 V
PL95A1
PL95A1