Página 187 - Diodos - Retificadores de Ponte | Produtos semicondutores discretos | Heisener Electronics
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Diodos - Retificadores de Ponte

Registros 7.565
Página  187/271
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP10ML-001E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
pacote: 4-SIP, KBPM
Estoque7.840
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
VUC25-16GO2
IXYS

DIODE BRIDGE FAST 1600V KAMM-MOD

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
  • Current - Reverse Leakage @ Vr: 5mA @ 1600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
  • Supplier Device Package: KAMM
pacote: KAMM
Estoque3.328
Standard
1600V
25A
2.2V @ 55A
5mA @ 1600V
-40°C ~ 125°C (TJ)
Chassis Mount
KAMM
KAMM
4GBL01
Vishay Semiconductor Diodes Division

BRIDGE SGL PHASE 100V 4A 4-GBL

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
pacote: 4-SIP, GBL
Estoque2.208
Standard
100V
4A
-
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
UGB6124AG
IXYS

IC MOD DIODE 1PHASE BRIDGE UGB1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 10500V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: UGB-1
  • Supplier Device Package: UGB-1
pacote: UGB-1
Estoque4.336
Standard
10500V
1A
-
-
150°C (TJ)
Chassis Mount
UGB-1
UGB-1
VBO25-12AO2
IXYS

DIODE BRIDGE 31A 1200V AVAL FO-A

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
pacote: 4-Square, FO-A
Estoque3.920
Avalanche
1200V
38A
1.36V @ 55A
300µA @ 1200V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
VBO30-08NO7
IXYS

DIODE BRIDGE 35A 800V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
pacote: PWS-A
Estoque2.928
Standard
800V
35A
1.1V @ 15A
40µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-A
PWS-A
GBPC2510(UM)E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 25A 1000V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacote: 4-Square, GBPC
Estoque7.680
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
hot GBJ2008-F
Diodes Incorporated

RECT BRIDGE GPP 800V 20A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacote: 4-SIP, GBJ
Estoque11.784
Standard
800V
20A
1.05V @ 10A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
KBPC1006W-G
Comchip Technology

RECTIFIER BRIDGE 10A 600V KBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
pacote: 4-Square, KBPC-W
Estoque6.368
Standard
600V
10A
1.1V @ 5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
BU15085S-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 800V BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
pacote: 4-SIP, BU-5S
Estoque5.376
Standard
800V
15A
1.05V @ 7.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
hot KBP206G
GeneSiC Semiconductor

DIODE BRIDGE 2A 600V 1PH KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
pacote: 4-SIP, KBP
Estoque103.896
Standard
600V
2A
1.1V @ 2A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
DF1506S-E3/77
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
pacote: 4-SMD, Gull Wing
Estoque4.704
Standard
600V
1.5A
1.1V @ 1.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
ABS4HRGG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
pacote: 4-SMD, Gull Wing
Estoque6.112
Standard
400V
800mA
950mV @ 400mA
10µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
GBPC2504W-E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 25A 400V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
pacote: 4-Square, GBPC-W
Estoque3.744
Standard
400V
25A
1.1V @ 12.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
MSD100-08
Microsemi Corporation

DIODE BRIDGE 800V 100A SM3

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SM3-20H
  • Supplier Device Package: M3
pacote: SM3-20H
Estoque6.012
Standard
800V
100A
1.9V @ 300A
300µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
SM3-20H
M3
hot DF06SA-E3/77
Vishay Semiconductor Diodes Division

DIODE GPP 1A 600V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
pacote: 4-SMD, Gull Wing
Estoque72.000
Standard
600V
1A
1.1V @ 1A
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
1N4438F
Microchip Technology

STD RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -65°C ~ 160°C
  • Mounting Type: Chassis Mount
  • Package / Case: Press Fit
  • Supplier Device Package: Press Fit
pacote: -
Request a Quote
Standard
600 V
10 A
1.2 V @ 10 A
10 µA @ 600 V
-65°C ~ 160°C
Chassis Mount
Press Fit
Press Fit
NTE5320
NTE Electronics, Inc

R-SI BRIDGE 1KV 4A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
pacote: -
Request a Quote
Standard
1 kV
4 A
1 V @ 3 A
10 µA @ 1000 V
-55°C ~ 125°C (TJ)
Through Hole
4-ESIP
4-SIP
MDMA240UB1600ED
IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 240 A
  • Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
pacote: -
Request a Quote
Standard
1.2 kV
240 A
1.92 V @ 240 A
100 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
E2
E2
GBJL2506-BP
Micro Commercial Co

DIODE BRIDGE GBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
pacote: -
Request a Quote
Standard
600 V
25 A
1.05 V @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJL
GBJL
GBS4M
Diotec Semiconductor

BRIDGE 1PH GBS_SIL-1.5-2.3 1000V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2.3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: 4-SIP
pacote: -
Request a Quote
Standard
1 kV
2.3 A
1.05 V @ 2 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP
4-SIP
KBP301-BP
Micro Commercial Co

BRIDGE RECT 100V 3A KBPR

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPR
  • Supplier Device Package: KBPR
pacote: -
Request a Quote
Standard
100 V
3 A
1.1 V @ 1 A
10 µA @ 100 V
-55°C ~ 125°C
Through Hole
4-SIP, KBPR
KBPR
KBP106G-C2G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
pacote: -
Request a Quote
Standard
800 V
1 A
1 V @ 1 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
UG6KB20
SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 6A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
pacote: -
Request a Quote
Standard
200 V
6 A
1.1 V @ 6 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
KBU1004G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 400V 10A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: -
Request a Quote
Standard
400 V
10 A
1.1 V @ 10 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBL005E-E3-A
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 50V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
pacote: -
Request a Quote
Standard
50 V
3 A
1 V @ 4 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBU603G
Taiwan Semiconductor Corporation

DIODE BRIDGE 6A 200V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacote: -
Request a Quote
Standard
200 V
6 A
1.1 V @ 6 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBJ401G-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
pacote: -
Request a Quote
Standard
100 V
4 A
1 V @ 2 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ